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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZXMN3A01E6TC

Name: ZXMN3A01E6TC
Brand: Diodes Incorporated
SKU: ZXMN3A01E6TC
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXMN3A01E6TC

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: SOT-23-6

Datasheet:: ZXMN3A01E6TC.pdf

Description:: MOSFET N-CH 30V 2.4A SOT23-6

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Product details

Overview

ZXMN3A01E6TC from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET optimized for high-efficiency power management, featuring R_DS(ON) = 0.12 Ω @ V_GS = 10V, I_D = 3.0A at T_A = +25°C, and fast switching (t_F = 2.9 ns), deployed in DC-DC converters and LED backlighting circuits.

For engineers reviewing the ZXMN3A01E6TC datasheet, ZXMN3A01E6TC pinout, ZXMN3A01E6TC application, or ZXMN3A01E6TC equivalent, key selection criteria include low on-resistance at 4.5V gate drive, body diode recovery performance (t_RR = 17.7 ns), thermal resistance (R_θJA = 70 °C/W under pulsed conditions), and SOT26 package compatibility with space-constrained PCB layouts.

Technical Context

This MOSFET employs planar trench-gate technology to balance conduction loss and switching speed. Its gate threshold voltage (V_GS(TH) = 1.0 V min) enables reliable turn-on with standard logic-level drivers, while low input capacitance (C_iss = 190 pF) reduces gate drive power requirements.

The integrated body diode supports synchronous rectification and flyback operation, with characterized reverse recovery charge (Q_RR = 13.0 nC) and forward voltage (V_SD = 0.84 V typ at I_S = 1.7A), enabling predictable loss modeling in discontinuous conduction mode (DCM) topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - maximum blocking voltage before avalanche; suitable for 24V rail and 12V automotive auxiliary systems
R_DS(ON) @ 10V	0.12 Ω - conduction loss of 0.75 W at 2.5A continuous drain current, enabling compact thermal design
R_DS(ON) @ 4.5V	0.18 Ω - ensures usable on-state performance with 3.3V/5V microcontroller GPIO drive
Q_g @ 10V	3.9 nC - total gate charge determines required driver peak current and switching transition time
t_RR	17.7 ns - body diode recovery time directly impacts shoot-through risk and EMI in half-bridge configurations
R_θJA (pulsed)	70 °C/W - junction-to-ambient thermal resistance under short-duration pulse conditions per JESD51-7
C_iss	190 pF - input capacitance governs gate drive energy and Miller effect during voltage transitions

Pinout & Package

Package: SOT26 - surface-mount plastic package with 6 terminals, 0.018 g mass, UL 94V-0 rated molding compound, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤ ±20V gate-source voltage; low C_iss enables fast edge rates with minimal driver effort
2 (S)	Source	Reference node for gate drive; tied to power ground in low-side switch configuration
3 (D)	Drain	High-side connection point; carries full load current and withstands 30V transients
4 (S)	Source (redundant)	Second source bond wire; lowers effective source inductance and improves current sharing in parallel layouts
5 (D)	Drain (redundant)	Second drain bond wire; reduces package parasitic inductance for high-frequency switching
6 (G)	Gate (redundant)	Secondary gate connection; minimizes gate loop inductance in high-dI/dt applications

Key Features

Feature	Design Value
Low R_DS(ON) at 4.5V	0.18 Ω enables efficient operation with 3.3V logic-level controllers without external level-shifting
Fast switching speed	Turn-off fall time t_F = 2.9 ns reduces switching losses in >1 MHz DC-DC converters
Optimized body diode	V_SD = 0.84 V typ and Q_RR = 13.0 nC support reliable freewheeling in buck and flyback topologies
Green packaging	Halogen- and antimony-free compound (<900 ppm Br/Cl, <1000 ppm Sb) meets IPC-1752A Class 3 environmental compliance

Applications

DC-DC Buck Converter

LED Backlight Driver

Use Scenario: Step-down regulation from 12V/24V input to 3.3–5V output for microcontroller and sensor rails.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in continuous conduction mode (CCM) operation.

Use Value: R_DS(ON) = 0.12 Ω @ 10V limits conduction loss to <0.75 W at 2.5A, improving efficiency by ≥2% over comparable 0.25 Ω devices.

Use Scenario: Constant-current control for white LED strings in LCD panel backlighting.

IC Role / Device Role / Timing Role: PWM-controlled current sink switch operating at 1–5 kHz.

Use Value: Fast t_F = 2.9 ns and low Q_g = 3.9 nC minimize switching distortion and enable precise dimming linearity.

Power Management Unit (PMU)

Load Switch for USB Peripherals

Use Scenario: Independent power rail enable/disable in multi-rail embedded systems with sequencing requirements.

IC Role / Device Role / Timing Role: High-side or low-side load switch controlled by system PMIC or MCU GPIO.

Use Value: V_GS(TH) = 1.0 V min ensures robust turn-on with 1.8V/3.3V logic, while R_DS(ON) = 0.18 Ω @ 4.5V keeps dropout below 450 mV at 2.5A.

Use Scenario: Hot-swap protection and inrush current limiting for USB 2.0/3.0 peripheral ports.

IC Role / Device Role / Timing Role: Controlled power path switch with soft-start behavior via gate resistor tuning.

Use Value: Low C_iss = 190 pF and predictable t_D(ON) = 1.7 ns allow stable gate drive with RC-based slew rate control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3020LSD-13	R_DS(ON) = 0.115 Ω @ 4.5V; higher Q_g = 5.2 nC; SOT23-6 package	Higher gate charge increases driver loss in high-frequency (>2 MHz) designs	Prefer when lower on-resistance at 4.5V is critical and layout allows larger gate drive capability
SI2302DS-T1-GE3	R_DS(ON) = 0.09 Ω @ 4.5V; lower V_DSS = 20V; same SOT23-6 footprint	Not suitable for 24V input systems due to reduced breakdown margin	Select only for 5V/12V-only applications where 20V rating is sufficient and lowest R_DS(ON) is prioritized

Compared with DMN3020LSD-13 and SI2302DS-T1-GE3, ZXMN3A01E6TC offers balanced trade-offs: 30V rating ensures headroom in 24V industrial systems, 0.18 Ω @ 4.5V supports logic-level drive, and 70 °C/W thermal resistance enables higher sustained current in constrained layouts.

Availability

ZXMN3A01E6TC is available at Aetrix Electronics and suitable for DC-DC converters, LED backlighting, and power management units requiring stable component supply across industrial, computing, and consumer electronics programs.

Supply support for ZXMN3A01E6TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

ZXMN3A01E6TC belongs to Diodes' ZXMN series of logic-level N-channel MOSFETs, engineered specifically for high-efficiency, space-constrained power conversion in portable and embedded systems.

FAQ

Is ZXMN3A01E6TC suitable for 3.3V gate drive in battery-powered applications?

Yes. With V_GS(TH) = 1.0 V minimum and R_DS(ON) = 0.18 Ω at V_GS = 4.5V, it delivers usable on-resistance under 3.3V drive (measured R_DS(ON) ≈ 0.25 Ω at 3.3V per typical curves). This supports efficient operation in Li-ion powered systems where gate voltage may sag below 4.5V.

What is the maximum continuous drain current at 70°C ambient temperature?

The datasheet specifies I_D = 2.4 A at T_A = +70°C under steady-state conditions (Note 6). This rating assumes mounting on FR-4 PCB with defined thermal conditions and accounts for derating due to junction temperature limits (T_J(max) = +150°C).

Does ZXMN3A01E6TC have an integrated ESD protection diode on the gate?

No. The device does not integrate gate ESD protection structures. External gate resistors (typically 10–100 Ω) and TVS clamping are recommended for board-level ESD immunity, especially in handheld or connector-exposed applications per IEC 61000-4-2 Level 4.

Can ZXMN3A01E6TC be used in parallel configurations for higher current handling?

Yes, but with precautions. Its positive temperature coefficient of R_DS(ON) supports current sharing; however, matched gate drive routing, symmetrical PCB layout, and individual gate resistors are required to avoid oscillation and uneven current distribution above 5A total load.

ZXMN3A01E6TC Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 2.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 120mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 3.9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 190 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-6

ZXMN3A01E6TC FAQ

1.How can I place an order for ZXMN3A01E6TC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMN3A01E6TC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMN3A01E6TC reliable?

The price and inventory of ZXMN3A01E6TC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN3A01E6TC is usually 5 days.

3.What payment methods are accepted for ZXMN3A01E6TC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMN3A01E6TC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMN3A01E6TC?

ZXMN3A01E6TC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMN3A01E6TC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMN3A01E6TC?

For technical support, including ZXMN3A01E6TC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN3A01E6TC requirements.

6.How does Aetrix verify that ZXMN3A01E6TC is sourced from the original manufacturer or authorized distributors?

All ZXMN3A01E6TC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN3A01E6TC meets industry standards.

7.What is the process for return or replacement of ZXMN3A01E6TC?

All ZXMN3A01E6TC units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN3A01E6TC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMN3A01E6TC part is unused and in its original packaging.

Return procedure for ZXMN3A01E6TC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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