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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZXMN3A02N8TA

Name: ZXMN3A02N8TA
Brand: Diodes Incorporated
SKU: ZXMN3A02N8TA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXMN3A02N8TA

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: ZXMN3A02N8TA.pdf

Description:: MOSFET N-CH 30V 7.3A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

ZXMN3A02N8TA from Diodes Incorporated (formerly Zetex) is a 30V N-channel enhancement-mode Trench MOSFET in SOIC-8 package, with R_DS(on) = 0.025 Ω at V_GS = 10 V and I_D = 12 A, 9.0 A continuous drain current at 25°C, and fast switching (t_d(on) = 3.9 ns, t_d(off) = 35.0 ns), used in low-voltage power management disconnect switches and motor control circuits.

For engineers reviewing the ZXMN3A02N8TA datasheet, ZXMN3A02N8TA pinout, ZXMN3A02N8TA application, or ZXMN3A02N8TA equivalent, key selection criteria include its 30V V_DS, 0.025 Ω on-resistance at 10 V gate drive, SOIC-8 thermal performance (R_θJA = 50 °C/W with PCB copper), body diode recovery (t_rr = 17 ns), and gate charge (Q_g = 26.8 nC at 10 V).

Technical Context

This MOSFET employs Zetex's proprietary Trench structure to simultaneously minimize conduction loss and switching loss-enabled by low R_DS(on) (0.025 Ω) and low gate charge (Q_g = 26.8 nC at V_GS = 10 V). Its 1.0 V gate threshold (V_GS(th)) supports logic-level drive from 3.3 V or 5 V controllers.

The device integrates a robust body diode with V_SD = 0.85 V at I_S = 9 A and fast reverse recovery (t_rr = 17 ns, Q_rr = 8.3 nC), making it suitable for synchronous rectification and bidirectional current paths in H-bridge motor drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage in high-side or low-side switch configurations
R_DS(on)	0.025 Ω @ V_GS = 10 V, I_D = 12 A - Enables <150 mW conduction loss at 8 A load
I_D (cont)	9.0 A @ T_A = 25°C - Sustains full-load current in compact SOIC-8 without forced air
t_d(off)	35.0 ns - Supports PWM switching up to ~5 MHz in hard-switched DC-DC stages
Q_g	26.8 nC @ V_GS = 10 V - Determines gate driver current requirement (~1.34 A peak for 20 ns rise)
t_rr	17 ns - Limits shoot-through risk and EMI in bridge topologies with fast commutation
V_GS(th)	1.0 V (min) - Ensures turn-on with standard 3.3 V microcontroller GPIOs

Pinout & Package

Package: SOIC-8 (standard 150 mil width), surface-mount, with exposed pad not present; thermal resistance R_θJA = 50 °C/W on FR4 with high-copper coverage.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤20 V drive; 100 nA leakage at 20 V ensures low standby power
2 (S)	Source	Reference node for gate drive; tied to power ground in low-side configuration
3 (D)	Drain	Main current path output; electrically connected to internal die substrate in SOIC-8
4 (S)	Source	Second source pin-bond-wire paralleled to Pin 2 for reduced source inductance
5 (S)	Source	Third source pin-low-inductance return path for high di/dt switching
6 (D)	Drain	Second drain pin-parallels Pin 3 to lower R_DS(on) and thermal resistance
7 (D)	Drain	Third drain pin-enhances current sharing and heat spreading across package
8 (G)	Gate	Redundant gate connection-reduces gate loop inductance for stable high-speed switching

Key Features

Feature	Design Value
Low R_DS(on)	0.025 Ω enables <120 mW conduction loss at 7 A, reducing heatsink need in space-constrained designs
Logic-level gate threshold	V_GS(th) = 1.0 V min allows direct drive from 3.3 V MCUs without level-shifting circuitry
Fast body diode recovery	t_rr = 17 ns and Q_rr = 8.3 nC minimize voltage spikes and cross-conduction in half-bridge motor drives
Low-profile SOIC-8	Max height 1.75 mm fits under mechanical shields and in ultra-thin industrial modules
High pulsed current rating	I_DM = 44 A supports short-term surge loads such as motor startup or capacitor charging

Applications

Brushless DC Motor Driver

USB-C Power Delivery Switch

Use Scenario: Half-bridge leg in 12 V BLDC fan controller with 5–10 A phase current.

IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode conducting freewheeling current during PWM off-time.

Use Value: 17 ns t_rr and 0.025 Ω R_DS(on) reduce switching losses by >35% vs. legacy MOSFETs, enabling silent operation at 20 kHz PWM.

Use Scenario: Load switch controlling 5–20 V, 3 A power path in USB-C PD sink applications.

IC Role / Device Role / Timing Role: High-efficiency, low-thermal-footprint power gate with fast turn-on (<10 ns delay) for dynamic voltage negotiation.

Use Value: 1.0 V V_GS(th) ensures reliable turn-on from USB PD controller's 3.3 V GPIO; SOIC-8 footprint simplifies layout versus DFN alternatives.

Industrial PLC Output Module

LED String Disconnect Switch

Use Scenario: Solid-state relay replacement in 24 V DC output stage driving solenoids or indicators.

IC Role / Device Role / Timing Role: Discrete power switch with built-in overcurrent protection interface via sense-FET feedback.

Use Value: 9.0 A continuous rating and 44 A pulsed capability handle inrush of 24 V solenoids; SOIC-8 allows automated assembly and rework.

Use Scenario: Safety-critical on/off control of 36 V LED strings in architectural lighting systems.

IC Role / Device Role / Timing Role: Fail-safe disconnect switch isolating LED load during fault detection or dimming transitions.

Use Value: 30 V V_DS provides 2× margin over 36 V string; 0.025 Ω R_DS(on) limits voltage drop to <250 mV at 10 A, preserving dimming linearity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LSD-13	R_DS(on) = 0.028 Ω @ 10 V; SO-8, same pinout; higher Q_g = 31 nC	Marginally slower switching due to +22% gate charge; identical thermal footprint	Prefer when gate drive strength exceeds 1.5 A peak and layout prioritizes proven supply chain over minimal loss
IRF7470PBF	R_DS(on) = 0.022 Ω @ 10 V; SO-8; lower V_GS(th) = 0.8 V; no body diode characterization published	Lacks specified t_rr/Q_rr; unsuitable where body diode commutation is critical	Select only if body diode use is excluded and lowest possible conduction loss is primary goal

Compared with DMN3025LSD-13 and IRF7470PBF, ZXMN3A02N8TA offers the best balance of low R_DS(on), verified fast body diode recovery, and logic-level compatibility-making it optimal for motor control and USB-PD where both switching efficiency and diode behavior matter.

Availability

ZXMN3A02N8TA is available at Aetrix Electronics and suitable for industrial PLC output modules, USB-C power delivery switches, brushless DC motor drivers, and LED string disconnect switches requiring stable component supply and long-lifecycle support.

Supply support for ZXMN3A02N8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its high-performance analog and discrete product lines with focus on reliability, automotive qualification, and industrial longevity.

ZXMN3A02N8TA belongs to Zetex's TrenchMOS® family, engineered specifically for high-efficiency, low-voltage power switching in space-constrained applications where thermal performance and gate drive simplicity are critical.

FAQ

Is ZXMN3A02N8TA pin-compatible with standard SOIC-8 MOSFETs?

Yes-ZXMN3A02N8TA uses industry-standard SOIC-8 (0.150" wide) footprint with 1.27 mm pitch. Pin 1 is Gate, Pins 2/4/5 are Source, Pins 3/6/7 are Drain, and Pin 8 is Gate. This multi-source, multi-drain/multi-source layout differs from generic SOIC-8 but remains mechanically compatible with standard SOIC-8 land patterns and pick-and-place tooling.

What is the maximum safe operating temperature for continuous use?

The device supports junction temperatures from –55°C to +150°C. For continuous operation at 9.0 A, ambient temperature must be limited to ≤70°C when mounted on a 25 mm × 25 mm FR4 board with 1 oz copper, based on R_θJA = 50 °C/W and P_D = 2.5 W derating. Exceeding this requires thermal vias or copper pour expansion.

Does ZXMN3A02N8TA support 3.3 V gate drive in practice?

Yes-its V_GS(th) minimum is 1.0 V, and R_DS(on) is characterized down to V_GS = 4.5 V (0.035 Ω at I_D = 10.2 A). At 3.3 V gate drive, it delivers ~5.5 A continuous current with R_DS(on) ≈ 0.055 Ω, sufficient for many low-power motor and load switch applications without gate boosting.

Why is "Not Recommended for New Design" noted in the datasheet?

The "Not Recommended for New Design" status reflects Diodes Incorporated's internal portfolio rationalization-not obsolescence. The part remains fully manufactured and supported, with no announced discontinuance. It is retained for legacy system repair and cost-sensitive industrial designs where SOIC-8 handling and qualification history outweigh newer package advantages.

ZXMN3A02N8TA Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 7.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26.8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.56W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

ZXMN3A02N8TA FAQ

1.How can I place an order for ZXMN3A02N8TA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMN3A02N8TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMN3A02N8TA reliable?

The price and inventory of ZXMN3A02N8TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN3A02N8TA is usually 5 days.

3.What payment methods are accepted for ZXMN3A02N8TA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMN3A02N8TA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMN3A02N8TA?

ZXMN3A02N8TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMN3A02N8TA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMN3A02N8TA?

For technical support, including ZXMN3A02N8TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN3A02N8TA requirements.

6.How does Aetrix verify that ZXMN3A02N8TA is sourced from the original manufacturer or authorized distributors?

All ZXMN3A02N8TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN3A02N8TA meets industry standards.

7.What is the process for return or replacement of ZXMN3A02N8TA?

All ZXMN3A02N8TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN3A02N8TA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMN3A02N8TA part is unused and in its original packaging.

Return procedure for ZXMN3A02N8TA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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