Diodes Incorporated ZXMN3A02X8TA

Overview

ZXMN3A02X8TA from Diodes Incorporated (formerly Zetex) is a 30V N-channel enhancement-mode Trench MOSFET in low-profile SOIC-8 package, with R_DS(on) = 0.025 Ω @ V_GS = 10 V, I_D = 12 A, and fast switching (t_d(off) = 35 ns). It serves as a high-efficiency synchronous rectifier or load switch in DC–DC converters operating at ≤30 V input.

For engineers reviewing the ZXMN3A02X8TA datasheet, ZXMN3A02X8TA pinout, ZXMN3A02X8TA application, or ZXMN3A02X8TA equivalent, key selection criteria include its 1.1 W power dissipation at 25°C ambient, 0.95 V body diode forward voltage, 14.5 nC total gate charge at 5 V drive, and SOIC-8 thermal resistance of 113 °C/W on 25 mm × 25 mm FR4 PCB.

Technical Context

This MOSFET employs Zetex's proprietary Trench structure to achieve simultaneous low R_DS(on) (0.025 Ω) and low gate charge (Q_g = 26.8 nC @ 10 V), enabling high-frequency operation up to several hundred kHz in buck converters. Its V_GS(th) = 1 V (min) supports logic-level gate drive from 3.3 V or 5 V controllers.

The device integrates a robust body diode with t_rr = 17 ns and Q_rr = 8.3 nC, suitable for synchronous rectification where reverse recovery loss must be minimized. Thermal design relies on its SOIC-8 footprint with R_θJA = 70 °C/W under optimized PCB layout (single-sided 1 oz copper).

Key Specifications

Pinout & Package

Package: SOIC-8 (surface-mount, low-profile, 3.9 mm × 4.9 mm footprint per Zetex package outline). Pin 1 marked by notch or dot; pins numbered counterclockwise.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMN3025LSD-13 and SI2302DS-T1-GE3, ZXMN3A02X8TA delivers the lowest R_DS(on) in SOIC-8 with thermal pad, making it optimal for 5–12 V power stages demanding ≤0.3 W conduction loss and 5.4 A continuous current at 70°C ambient.

Availability

ZXMN3A02X8TA is available at Aetrix Electronics and suitable for DC–DC converters, hot-swap controllers, motor drivers, and USB-C power delivery systems requiring stable component supply and consistent SOIC-8 thermal performance.

Supply support for ZXMN3A02X8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its high-performance analog and power portfolio, focusing on reliability-critical discrete and analog solutions for industrial and computing markets.

ZXMN3A02X8TA belongs to Zetex's TrenchMOS® family, engineered specifically for high-efficiency, low-voltage power conversion where low R_DS(on), fast switching, and logic-level gate drive are simultaneously required.

FAQ

What is the maximum continuous drain current at 85°C ambient temperature?

The datasheet specifies I_D = 5.4 A at T_A = 70°C with R_θJA = 70 °C/W. At 85°C ambient, derating yields ≈4.4 A using linear interpolation: (150°C − 85°C) × 14.4 mW/°C = 936 mW → I_D = √(0.936 W / 0.035 Ω) ≈ 5.2 A; conservative design limits to 4.4 A for 20% safety margin and PCB layout variation.

Can ZXMN3A02X8TA be used as a high-side switch with 5 V gate drive?

Yes-its V_GS(th) = 1 V (min) and R_DS(on) = 0.035 Ω @ V_GS = 4.5 V enable reliable enhancement-mode operation with 5 V logic. However, high-side use requires a gate driver capable of bootstrapping or isolated level-shifting to maintain V_GS > 4.5 V when V_DS approaches 30 V.

Is the exposed drain pad (pin 5) electrically isolated from other pins?

No-the exposed drain pad is internally connected to pins 6, 7, and 8 (drain terminals) and forms the primary drain node and thermal path. It must be soldered to a PCB copper pour tied to the system drain net; floating or grounded connection will cause functional failure or thermal runaway.

Does ZXMN3A02X8TA have avalanche rating information in the datasheet?

No-avalanche energy rating (E_AS) is not specified in the January 2002 datasheet. The device is characterized for repetitive pulsed operation (I_DM = 24 A) but lacks guaranteed single-pulse avalanche capability. Designers must implement external clamping or snubbing for inductive switching stress.