Diodes Incorporated ZXMN3A02X8TC

Overview

ZXMN3A02X8TC from Diodes Incorporated (formerly Zetex) is a 30V N-channel enhancement-mode Trench MOSFET in low-profile SOIC-8 package, with R_DS(on) = 0.025 Ω @ V_GS = 10 V, I_D = 12 A, and fast switching (t_d(off) = 35 ns). It serves as a high-efficiency synchronous rectifier or load switch in DC–DC converters operating below 30 V.

For engineers reviewing the ZXMN3A02X8TC datasheet, ZXMN3A02X8TC pinout, ZXMN3A02X8TC application, or ZXMN3A02X8TC equivalent, key selection criteria include its 0.025 Ω on-resistance at 10 V gate drive, 6.7 A continuous drain current at 25°C ambient, body diode reverse recovery time of 17 ns, and SOIC-8 thermal resistance (R_θJA = 70°C/W with FR4 PCB).

Technical Context

This MOSFET employs Zetex's proprietary Trench structure to simultaneously minimize conduction loss and switching loss-enabling high-frequency operation up to 1 MHz in buck converters. Its low 1 V gate threshold voltage supports 3.3 V logic-level drive, while the integrated body diode exhibits controlled Q_rr = 8.3 nC and t_rr = 17 ns for reduced shoot-through risk.

The device is characterized for surface-mount use on single-sided 1 oz copper FR4 (25 mm × 25 mm), with two thermal ratings: R_θJA = 70°C/W (measured at t = 10 s) and 113°C/W (steady-state). Its 0.035 Ω R_DS(on) at V_GS = 4.5 V confirms compatibility with 5 V microcontroller outputs.

Key Specifications

Pinout & Package

Package: SOIC-8 (3.9 mm × 4.9 mm × 1.5 mm), surface-mount, low-profile outline per Zetex drawing (Issue 1, Jan 2002). Pin 1 marked by notch or dot; leads are gull-wing, 0.65 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMN3025LSD-13 and SI2302DS-T1-GE3, ZXMN3A02X8TC delivers optimal balance of low R_DS(on), proven SOIC-8 thermal performance, and 6.7 A capability-making it preferred for mid-power DC–DC and load-switch designs where reliability and thermal margin are critical.

Availability

ZXMN3A02X8TC is available at Aetrix Electronics and suitable for DC–DC converters, hot-swap controllers, motor drivers, and USB-C power delivery systems requiring stable component supply across production lifecycles.

Supply support for ZXMN3A02X8TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its high-performance analog and power portfolio, emphasizing precision, efficiency, and reliability in discrete semiconductors.

ZXMN3A02X8TC belongs to Zetex's TrenchMOS® power MOSFET family, engineered specifically for high-efficiency, low-voltage power conversion in space-constrained industrial and computing applications.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The ZXMN3A02X8TC supports 5.4 A continuous drain current at T_A = 70°C with V_GS = 10 V, based on its 1.8 W power dissipation rating and 70°C/W junction-to-ambient thermal resistance. This reflects real-world derating on standard FR4 PCBs without heatsinks.

Does this MOSFET require a gate resistor for stability in switching applications?

Yes-a 10 Ω to 47 Ω series gate resistor is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 120 pF) and PCB trace inductance. Without it, overshoot exceeding V_GS(max) = 20 V may occur during fast edge transitions.

Can ZXMN3A02X8TC be used in linear regulator applications?

No-it is not characterized or rated for linear (ohmic) operation. Its Safe Operating Area (SOA) is not specified beyond pulsed conditions, and sustained operation in the linear region risks thermal runaway due to positive temperature coefficient of R_DS(on).

Is the body diode suitable for reverse polarity protection?

Yes-the integrated body diode has V_SD = 0.95 V at 9 A and t_rr = 17 ns, making it effective for low-loss reverse polarity protection in 12–24 V systems when placed anode-to-input. However, external Schottky is preferred if forward drop must be <0.4 V.