My Inquiry
My Account
Diodes Incorporated ZXMN3A04DN8TA
- Part No.:
- ZXMN3A04DN8TA
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
ZXMN3A04DN8TA.pdf
- Description:
- MOSFET 2N-CH 30V 6.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:16,040
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
ZXMN3A04DN8TA from Diodes Incorporated (formerly Zetex) is a dual 30V N-channel enhancement-mode MOSFET in SOIC-8 package, configured as two independent low-side switches with RDS(on) = 0.02 Ω @ VGS = 10 V, ID = 12.6 A, and fast switching (tr = 6.1 ns, tf = 20.2 ns), used in synchronous buck converters and load-switching circuits.
For engineers reviewing the ZXMN3A04DN8TA datasheet, ZXMN3A04DN8TA pinout, ZXMN3A04DN8TA application, or ZXMN3A04DN8TA equivalent, key selection criteria include dual-channel integration, 30V VDS rating, low gate charge (Qg = 36.8 nC @ 10 V), thermal resistance (RθJA = 58 °C/W on FR4), and body diode recovery (trr = 18.4 ns).
Technical Context
This dual MOSFET integrates two identical N-channel trench devices sharing no internal connection - each channel operates independently with separate source, drain, and gate terminals. Its trench process enables simultaneous optimization of conduction loss (RDS(on)) and switching loss (Ciss = 1890 pF, Qgd = 7.1 nC).
The device supports logic-level drive (VGS(th) = 1.0 V min) and exhibits low gate threshold hysteresis, enabling stable operation with 3.3 V or 5 V controllers. Body diode forward voltage is 0.85 V @ IS = 6.8 A, supporting bidirectional current handling in H-bridge or reverse-polarity protection topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 30 V - supports 24 V rail systems with 20 % margin for transients |
| RDS(on) | 0.02 Ω @ VGS = 10 V - delivers ≤250 mW conduction loss at 8.5 A continuous |
| Qg | 36.8 nC @ VGS = 10 V - determines gate driver power requirement and switching speed scalability |
| tr/tf | 6.1 ns / 20.2 ns - enables >1 MHz switching in DC-DC converters with minimal overlap loss |
| RθJA | 58 °C/W - requires ≤21 °C ambient rise to maintain Tj < 125 °C at 2.15 W dissipation |
| trr | 18.4 ns - limits reverse-recovery energy in synchronous rectification, reducing shoot-through risk |
| ID (cont) | 6.5 A @ TA = 25 °C (SOIC-8, 1 oz Cu) - defines maximum steady-state current under standard PCB layout |
Pinout & Package
Package: SOIC-8 (3.9 mm × 4.9 mm × 1.75 mm), surface-mount, dual-channel isolated layout. Pin 1 marked by notch or dot; pins 1–4 assigned to Channel 1, pins 5–8 to Channel 2.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Control input for first MOSFET; accepts 1.0–20 V logic-level drive |
| 2 (S1) | Source of Channel 1 | Reference node for Channel 1; tied to local ground or low-side return path |
| 3 (D1) | Drain of Channel 1 | High-current output node; connects to load or inductor in buck stage |
| 4 (S1) | Source of Channel 1 (repeated) | Second S1 pin provides low-inductance source connection for high-frequency operation |
| 5 (D2) | Drain of Channel 2 | Independent high-current output; used for second switch or complementary function |
| 6 (S2) | Source of Channel 2 | Isolated reference for Channel 2; enables floating or differential configurations |
| 7 (G2) | Gate of Channel 2 | Separate control input; allows asynchronous or phase-shifted switching |
| 8 (S2) | Source of Channel 2 (repeated) | Second S2 pin reduces source loop inductance for improved EMI performance |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Eliminates need for two discrete SOIC-8 MOSFETs, saving 30 % board area and interconnect inlays |
| Trench process RDS(on) optimization | 0.02 Ω @ 10 V enables ≥95 % efficiency in 12 V → 5 V/3 A buck converters at 500 kHz |
| Low Qgd/Qg ratio (19 %) | Reduces Miller plateau duration, improving controllability during hard switching |
| Body diode trr < 20 ns | Permits use in synchronous rectification without external Schottky clamp in 30 V-class supplies |
| SOIC-8 thermal pad compatibility | Enables direct replacement into legacy layouts using standard reflow profiles and stencil apertures |
Applications
| DC-DC Buck Converter | Hot-Swap Load Switch |
|---|---|
Use Scenario: 24 V input to 5 V/6 A output in industrial PLC power module. IC Role / Device Role: Dual low-side synchronous rectifier and high-side switch driver companion. Use Value: 0.02 Ω RDS(on) cuts conduction loss by 40 % vs. single-channel alternatives, enabling 10 K/W heatsink-free operation. | Use Scenario: 12 V backplane powering PCIe add-in card with inrush limiting. IC Role / Device Role: Dual-channel controlled disconnect switch with independent enable inputs. Use Value: Independent gate control allows staggered turn-on, limiting peak inrush to <15 A and eliminating mechanical relay wear. |
| Motor Phase Driver | Reverse Polarity Protection |
Use Scenario: 24 V brushed DC motor control in battery-powered medical pump. IC Role / Device Role: Half-bridge low-side pair driving motor windings with PWM duty cycle modulation. Use Value: 18.4 ns trr prevents shoot-through during direction reversal, ensuring safe commutation at 20 kHz. | Use Scenario: 24 V vehicle infotainment system powered from automotive battery. IC Role / Device Role: Back-to-back configured dual N-MOSFET for bidirectional blocking and low-loss conduction. Use Value: 0.85 V VSD minimizes voltage drop in forward path while maintaining <1 µA leakage in reverse fault condition. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSD-13 | RDS(on) = 0.025 Ω @ 10 V; SO-8; single-die dual (shared substrate) | Higher RθJA (75 °C/W); lower pulsed current (IDM = 30 A) | Prefer for cost-sensitive designs where 0.005 Ω RDS(on) penalty is acceptable and thermal margin exists. |
| SI6926ADQ-T1-GE3 | RDS(on) = 0.022 Ω @ 10 V; SO-8; dual isolated dies; Qg = 32 nC | Lower Ciss (1500 pF); tighter VGS(th) distribution (1.2–2.2 V) | Prefer when gate drive strength is limited or tighter threshold matching across channels is required. |
Compared with DMN3025LSD-13 and SI6926ADQ-T1-GE3, ZXMN3A04DN8TA offers the lowest RDS(on) and fastest tr, making it optimal for high-efficiency, high-frequency DC-DC stages where conduction loss dominates, while its higher Qgd demands robust gate drivers.
Availability
ZXMN3A04DN8TA is available at Aetrix Electronics and suitable for DC-DC converters, hot-swap load switches, and motor phase drivers requiring stable component supply across industrial, medical, and transportation electronics programs.
Supply support for ZXMN3A04DN8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its high-performance analog and power portfolio with focus on reliability and application-specific optimization.
ZXMN3A04DN8TA belongs to Zetex's TrenchMOS family, engineered for high-efficiency, low-voltage power conversion where low RDS(on), fast switching, and compact dual-channel integration are critical.
FAQ
What is the maximum continuous drain current per channel at 70°C ambient?
The maximum continuous drain current per channel is 6.8 A at TA = 70 °C with SOIC-8 mounting on FR4 PCB (1 oz copper), based on thermal derating from 2.15 W power dissipation and RθJA = 58 °C/W. This assumes no additional heatsinking and standard JEDEC layout conditions.
Can ZXMN3A04DN8TA be used in a synchronous rectifier configuration?
Yes - its body diode has trr = 18.4 ns and VSD = 0.85 V @ 6.8 A, enabling efficient synchronous rectification in 30 V-class buck converters. Gate timing must ensure dead-time control to avoid shoot-through, especially given its 7.1 nC Qgd.
Is the SOIC-8 package thermally enhanced with an exposed pad?
No - the ZXMN3A04DN8TA uses a standard SOIC-8 package without an exposed thermal pad. Thermal performance relies on PCB copper area (e.g., 25 mm × 25 mm 1 oz Cu) and solder joint quality; RθJA ranges from 58 to 100 °C/W depending on layout and airflow.
What is the gate threshold voltage range and how does it affect 3.3 V logic drive?
VGS(th) is specified as 1.0 V (min) to 2.5 V (max) at ID = 250 µA. At 3.3 V drive, both channels fully enhance with margin: RDS(on) drops to 0.03 Ω @ VGS = 4.5 V, enabling reliable operation with 3.3 V microcontrollers without level-shifting.
ZXMN3A04DN8TA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 6.5A
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 12.6A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 36.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1890pF @ 15V
- Power - Max:
- 1.81W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
ZXMN3A04DN8TA FAQ
1.How can I place an order for ZXMN3A04DN8TA through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXMN3A04DN8TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXMN3A04DN8TA reliable?
The price and inventory of ZXMN3A04DN8TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN3A04DN8TA is usually 5 days.
3.What payment methods are accepted for ZXMN3A04DN8TA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMN3A04DN8TA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXMN3A04DN8TA?
ZXMN3A04DN8TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXMN3A04DN8TA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXMN3A04DN8TA?
For technical support, including ZXMN3A04DN8TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN3A04DN8TA requirements.
6.How does Aetrix verify that ZXMN3A04DN8TA is sourced from the original manufacturer or authorized distributors?
All ZXMN3A04DN8TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN3A04DN8TA meets industry standards.
7.What is the process for return or replacement of ZXMN3A04DN8TA?
All ZXMN3A04DN8TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN3A04DN8TA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXMN3A04DN8TA part is unused and in its original packaging.
Return procedure for ZXMN3A04DN8TA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ZXMN3A04DN8TA Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
