Diodes Incorporated ZXMN3A04DN8TC

Overview

ZXMN3A04DN8TC from Zetex is a dual 30V N-channel enhancement-mode MOSFET in SOIC-8 package, designed for high-efficiency low-voltage power management. It delivers R_DS(on) = 0.02 Ω @ V_GS = 10 V, 8.5 A continuous drain current at 25°C, and fast switching (t_d(on) = 5.2 ns, t_f = 20.2 ns), enabling use in synchronous buck converters and load switches.

For engineers reviewing the ZXMN3A04DN8TC datasheet, ZXMN3A04DN8TC pinout, ZXMN3A04DN8TC application, or ZXMN3A04DN8TC equivalent, key selection criteria include dual-die thermal coupling, body diode recovery (t_rr = 18.4 ns), gate charge (Q_g = 36.8 nC @ 10 V), and SOIC-8 layout compatibility with 1.27 mm pitch.

Technical Context

This dual N-channel MOSFET integrates two independent trench-structured silicon dies in a single SOIC-8 package, sharing common source terminals per channel. Its low threshold voltage (V_GS(th) = 1.0 V typ.) enables 4.5 V logic-level drive, while R_DS(on) remains ≤0.03 Ω at V_GS = 4.5 V and I_D = 10.6 A.

Thermal performance is defined across three mounting conditions: R_θJA = 100°C/W (single-sided 1 oz copper), 69°C/W (short-duration transient), and 58°C/W (one active die). Dynamic parameters-including C_iss = 1890 pF, C_oss = 349 pF, and Q_gd = 7.1 nC-are specified at V_DS = 15 V for hard-switching design validation.

Key Specifications

Pinout & Package

Package: SOIC-8 (3.9 mm × 4.9 mm × 1.75 mm height), dual-channel layout with isolated gate and drain connections per channel, shared source pins (pins 4 & 5).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN3020LSD-13 and SI6926ADQ-T1-GE3, ZXMN3A04DN8TC offers matched channel characteristics and standard SOIC-8 pinout-critical for drop-in replacement in existing 24 V power rails where thermal pad assembly is not feasible and symmetry is required.

Availability

ZXMN3A04DN8TC is available at Aetrix Electronics and suitable for DC-DC converters, motor control modules, and battery protection circuits requiring stable component supply across automotive-grade temperature ranges (–55°C to +150°C).

Supply support for ZXMN3A04DN8TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Zetex (now part of Diodes Incorporated) is a UK-based analog and power semiconductor specialist focused on high-performance discrete devices for efficiency-critical systems.

ZXMN series MOSFETs were engineered specifically for space-constrained, high-frequency power conversion-emphasizing low gate charge, matched dual-die performance, and SOIC-8 manufacturability without thermal pads.

FAQ

What is the maximum safe operating junction temperature for ZXMN3A04DN8TC?

The absolute maximum junction temperature is +150°C, with continuous operation limited by thermal resistance and ambient conditions. At T_A = 70°C and R_θJA = 58°C/W (one active die), maximum allowable power dissipation is 1.38 W. Derating curves in the datasheet define safe operating area boundaries for pulsed and DC loads.

Can ZXMN3A04DN8TC be used in parallel configurations with other MOSFETs?

No-ZXMN3A04DN8TC is a monolithic dual-die device; its two channels share substrate and thermal mass, making external paralleling redundant and potentially destabilizing due to mismatched thermal coupling. For higher current, select a single-channel part with equivalent R_DS(on) and package thermal rating.

Does the body diode support synchronous rectification in buck converters?

Yes-the body diode has t_rr = 18.4 ns and V_SD = 0.85 V at 6.8 A, enabling efficient synchronous rectification up to ~1 MHz. However, its Q_rr = 11 nC requires careful dead-time tuning to avoid cross-conduction losses in high-duty-cycle operation.

Is the SOIC-8 package lead-free and RoHS-compliant?

Yes-ZXMN3A04DN8TC complies with RoHS Directive 2011/65/EU and uses lead-free matte tin plating. The device meets JEDEC J-STD-020 moisture sensitivity level MSL3, requiring bake conditioning if exposed to ambient >30°C/60% RH for >168 hours prior to reflow.