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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZXMN3A04KTC

Name: ZXMN3A04KTC
Brand: Diodes Incorporated
SKU: ZXMN3A04KTC
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXMN3A04KTC

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: ZXMN3A04KTC.pdf

Description:: MOSFET N-CH 30V 18.4A DPAK

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Product details

Overview

ZXMN3A04KTC from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for high-efficiency power management, featuring 30 V V(BR)DSS, 20 mΩ RDS(ON) at VGS = 10 V, and 18.4 A continuous drain current at TA = +25°C. It is used in DC-DC converters and LED backlighting circuits where low conduction loss and fast switching are critical.

For engineers reviewing the ZXMN3A04KTC datasheet, ZXMN3A04KTC pinout, ZXMN3A04KTC application, or ZXMN3A04KTC equivalent, key selection criteria include its TO252 package thermal performance (RθJA = 12.3 °C/W on 2 oz copper), 36.8 nC total gate charge at VGS = 10 V, and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve low RDS(ON) while maintaining controlled gate charge (Qg = 36.8 nC at VGS = 10 V) and fast switching (tD(OFF) = 38.1 ns). Its body diode exhibits VF = 0.85–0.95 V at IS = 6.8 A, supporting synchronous rectification in buck converters.

The device operates across –55°C to +150°C junction temperature range and supports pulsed drain currents up to 66 A. Its safe operating area (SOA) is characterized for both linear and switching modes, with derating defined for 1 oz and 2 oz copper PCB layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V(BR)DSS	30 V - Maximum blocking voltage before avalanche; sets upper limit for input voltage in 24 V systems
RDS(ON)	20 mΩ @ VGS = 10 V - Enables <0.37 W conduction loss at 12 A, critical for thermally constrained DC-DC stages
ID (continuous)	18.4 A @ TA = +25°C - Sustains high-current loads when mounted on 50 mm × 50 mm FR4 with 2 oz copper
Qg	36.8 nC @ VGS = 10 V - Determines gate driver power requirement and switching transition time in PWM control
RθJA	12.3 °C/W - Thermal resistance on 2 oz copper; enables 4.3 W dissipation without heatsink at ambient +25°C
VGS(th)	1.0 V min - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drive
tD(OFF)	38.1 ns - Defines minimum off-time in high-frequency (>1 MHz) switching applications

Pinout & Package

Package: TO252 (DPAK), surface-mount, thermally enhanced plastic case with exposed drain pad for improved heat transfer. Dimensions per AP02002: D = 6.10 mm, E = 6.58 mm, H = 9.91 mm, L = 1.59 mm.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of N-channel channel	Common return path for load current; tied to ground or low-side reference in buck/boost topologies
Pin 2 (Gate)	Control electrode	Receives PWM signal; requires ≤ ±20 V drive; 5.8 nC Qgs minimizes Miller plateau duration
Pin 3 (Drain)	High-side current output node	Connected to input rail or inductor node; large copper pad required for thermal and current handling

Key Features

Feature	Design Value
Low RDS(ON) at 4.5 V	30 mΩ - Supports direct 5 V microcontroller gate drive without level-shifting in compact power modules
AEC-Q101 qualified	Qualified for automotive powertrain and body electronics - validated for temperature cycling, HTRB, and UHAST
Green compound packaging	Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb) - meets JESD201 Class 1A whisker resistance
TO252 thermal design	Exposed drain pad + 12.3 °C/W RθJA - delivers 2.3× higher power density than SO-8 equivalents at same footprint

Applications

LED Backlighting

DC-DC Buck Converter

Use Scenario: Driving parallel LED strings in automotive instrument clusters with PWM dimming at 1–2 kHz.

IC Role / Device Role / Timing Role: Low-side switch controlling current through LED string via constant-current regulator feedback loop.

Use Value: 20 mΩ RDS(ON) limits I²R loss to <0.3 W at 12 A, reducing thermal stress on flex PCBs and enabling 100% duty-cycle operation.

Use Scenario: High-current step-down conversion from 24 V to 5 V/3.3 V in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Synchronous rectifier in continuous conduction mode (CCM) buck stage operating at 500 kHz.

Use Value: Fast tD(OFF) = 38.1 ns and low Qgd = 7.1 nC minimize dead-time losses and improve light-load efficiency by >2.1% vs. discrete diode solutions.

Automotive Body Control

USB-C Power Delivery

Use Scenario: Load switching for HVAC blower motors and window lift actuators in 12 V battery systems.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by CAN-linked MCU with overcurrent protection.

Use Value: AEC-Q101 qualification ensures 15-year field reliability; 66 A pulsed rating handles motor inrush without derating.

Use Scenario: Input protection and power path management in portable USB-C PD sink adapters rated for 60 W.

IC Role / Device Role / Timing Role: Reverse-voltage and overcurrent protection switch placed between Type-C receptacle and buck controller.

Use Value: 30 V V(BR)DSS safely clamps transients from hot-plug events; 0.85 V body diode forward drop reduces dropout during fault recovery.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LSD-13	RDS(ON) = 25 mΩ @ VGS = 10 V; SO-8 package; RθJA = 50 °C/W	Limited to ≤5 A continuous due to higher thermal resistance; unsuitable for >10 A DC-DC stages	Select only for space-constrained logic-level designs where peak current <6 A and thermal margin >40°C
IPB031N04LGATMA1	RDS(ON) = 3.1 mΩ @ VGS = 10 V; TO263 package; Qg = 62 nC	Lower RDS(ON) but higher gate charge increases driver loss; requires larger PCB area	Prefer for high-efficiency 48 V systems needing <10 mΩ conduction loss; avoid in 3.3 V gate-driven designs

Compared with DMN3025LSD-13, ZXMN3A04KTC delivers 25% lower RDS(ON) and 4× better thermal performance in TO252; versus IPB031N04LGATMA1, it trades 6.5× higher RDS(ON) for 44% lower Qg and 30% smaller footprint-ideal for cost-sensitive 24 V automotive power stages.

Availability

ZXMN3A04KTC is available at Aetrix Electronics and suitable for LED backlighting, DC-DC converters, and automotive body control modules requiring stable component supply and AEC-Q101 compliance.

Supply support for ZXMN3A04KTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the US.

ZXMN3A04KTC belongs to Diodes' ZXMN series of low-RDS(ON) TrenchMOS devices, engineered specifically for high-density, high-efficiency power conversion in automotive and industrial applications.

FAQ

What is the maximum allowable gate-source voltage for ZXMN3A04KTC?

The absolute maximum gate-source voltage is ±20 V. Exceeding this risks permanent oxide damage. For robust operation, gate drive should be limited to +12 V to +15 V with transient clamping, especially in noisy automotive environments where load-dump spikes may couple into gate traces.

Can ZXMN3A04KTC be used in high-frequency switching above 1 MHz?

Yes-its 36.8 nC total gate charge and 38.1 ns turn-off delay support operation up to 2 MHz in hard-switched topologies. However, layout parasitics must be minimized: keep gate loop inductance <2 nH and use Kelvin source connection to suppress Miller-induced false turn-on.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes-the body diode has tRR = 18.4 ns and QRR = 11 nC, verified under IS = 2.3 A and di/dt = 100 A/µs. This enables efficient synchronous rectification in buck converters up to 1 MHz, provided dead time is set to ≥60 ns to prevent shoot-through.

Does ZXMN3A04KTC require a heatsink in typical 12 A applications?

No-when mounted on a 50 mm × 50 mm FR4 board with 2 oz copper, its 12.3 °C/W RθJA allows 4.3 W dissipation at +25°C ambient. At 12 A and 20 mΩ, power loss is 2.88 W, resulting in ~35°C junction rise-within the 150°C max TJ limit without added heatsinking.

ZXMN3A04KTC Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250mA

Gate Charge (Qg) (Max) @ Vgs:: 36.8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1890 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.15W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252-3

ZXMN3A04KTC FAQ

1.How can I place an order for ZXMN3A04KTC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMN3A04KTC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMN3A04KTC reliable?

The price and inventory of ZXMN3A04KTC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN3A04KTC is usually 5 days.

3.What payment methods are accepted for ZXMN3A04KTC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMN3A04KTC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMN3A04KTC?

ZXMN3A04KTC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMN3A04KTC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMN3A04KTC?

For technical support, including ZXMN3A04KTC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN3A04KTC requirements.

6.How does Aetrix verify that ZXMN3A04KTC is sourced from the original manufacturer or authorized distributors?

All ZXMN3A04KTC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN3A04KTC meets industry standards.

7.What is the process for return or replacement of ZXMN3A04KTC?

All ZXMN3A04KTC units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN3A04KTC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMN3A04KTC part is unused and in its original packaging.

Return procedure for ZXMN3A04KTC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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