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Diodes Incorporated ZXMN3A06DN8TA
- Part No.:
- ZXMN3A06DN8TA
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
ZXMN3A06DN8TA.pdf
- Description:
- MOSFET 2N-CH 30V 4.9A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:13
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Product details
Overview
ZXMN3A06DN8TA from Diodes Incorporated (formerly Zetex) is a dual N-channel enhancement-mode Trench MOSFET in SOIC-8 package, rated for 30 V VDS, 6.2 A continuous drain current at 25°C, and 35 mΩ RDS(on) at VGS = 10 V. It integrates two identical die in one thermally optimized package for synchronous rectification and half-bridge switching in low-voltage DC–DC converters.
For engineers reviewing the ZXMN3A06DN8TA datasheet, ZXMN3A06DN8TA pinout, ZXMN3A06DN8TA application, or ZXMN3A06DN8TA equivalent, key selection criteria include dual-die thermal coupling, 9.2 nC total gate charge at 10 V drive, body diode reverse recovery time of 17.8 ns, and SOIC-8 footprint compatibility with standard PCB layout practices for power management ICs.
Technical Context
This device implements a dual-die trench-gate structure enabling simultaneous conduction control of two matched N-channel channels within a single SOIC-8 outline. Each channel supports independent gate drive with shared source terminals configured for common-source operation.
Its 35 mΩ on-resistance at 10 V gate drive and 17.5 nC total gate charge (VGS = 10 V) enable high-efficiency operation in 5–12 V input buck converters. The 17.8 ns body diode reverse recovery time and 11.6 nC Qrr support fast freewheeling in synchronous rectifier topologies without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 30 V - Supports input rails up to 24 V nominal with 20 % margin for transients |
| RDS(on) | 35 mΩ @ VGS = 10 V - Enables ≤1.1 W conduction loss at 6.2 A continuous load |
| Qg total | 17.5 nC @ VGS = 10 V - Determines gate driver current requirement for <100 ns switching transitions |
| trr | 17.8 ns - Limits voltage overshoot during body diode commutation in synchronous rectifiers |
| PD (θJA = 58 °C/W) | 2.1 W - Sustains 4.9 A continuous current at 70 °C ambient with minimal copper area |
| VGS(th) | 1.0 V min - Ensures turn-on with 3.3 V logic-level gate drivers without level-shifting |
| Ciss | 796 pF - Sets Miller capacitance impact on gate drive loop stability in high-frequency PWM |
Pinout & Package
SOIC-8 package (JEDEC MS-012AC), 5.0 mm × 4.0 mm × 1.75 mm height, surface-mount with gull-wing leads. Thermal pad not present; power dissipation relies on copper pour under exposed drain pads (pins 1, 2, 3, 4 and 5, 6, 7, 8).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Channel 1 Drain | Internally connected drain terminals for first MOSFET; tied to PCB copper for thermal conduction |
| 5, 6, 7, 8 | Channel 2 Drain | Internally connected drain terminals for second MOSFET; electrically isolated from Channel 1 drains |
| Source (Ch1) | Pin 4 (shared) | Common source node for Channel 1; used as reference for gate drive and current sensing |
| Source (Ch2) | Pin 5 (shared) | Common source node for Channel 2; enables independent high-side or low-side configuration |
| Gates | Pins 1 & 8 | Separate gate inputs - allows independent timing control of each channel for phase-shifted or complementary drive |
Key Features
| Feature | Design Value |
|---|---|
| Dual trench MOSFET die | Two matched 30 V/6.2 A N-channel devices in one SOIC-8 - eliminates inter-device parameter mismatch in bridge legs |
| Low RDS(on) × Qg figure-of-merit | 0.61 Ω·nC - balances conduction and switching losses for 500 kHz–1 MHz DC–DC operation |
| Logic-level gate threshold | VGS(th) = 1.0–2.5 V - compatible with 3.3 V microcontroller GPIO without gate driver IC |
| Fast body diode recovery | trr = 17.8 ns, Qrr = 11.6 nC - reduces switching loss and EMI in synchronous rectifier mode |
| Thermally enhanced SOIC-8 layout | θJA = 58 °C/W with FR4 PCB - achieves 2.1 W power dissipation using standard 2-layer board design |
Applications
| DC–DC Buck Converter | Synchronous Rectifier |
|---|---|
Use Scenario: 12 V input to 3.3 V/5 A output in industrial PLC power supply. IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology; driven by PWM controller's low-side output. Use Value: 35 mΩ RDS(on) limits conduction loss to 1.1 W at full load, improving efficiency over discrete MOSFET pairs by 1.8 %. | Use Scenario: Secondary-side rectification in isolated 48 V–12 V flyback converter for telecom equipment. IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; gate driven by transformer-coupled timing signal. Use Value: 17.8 ns trr prevents shoot-through during dead-time, reducing voltage spikes and enabling >92 % conversion efficiency. |
| Motor Driver Half-Bridge | Hot-Swap Power Switch |
Use Scenario: 24 V BLDC gate driver stage controlling 100 W fan motor in HVAC control module. IC Role / Device Role / Timing Role: High-side and low-side switches in half-bridge configuration; each channel independently controlled. Use Value: Dual-die matching ensures balanced current sharing and thermal distribution, extending MOSFET lifetime under PWM duty cycling. | Use Scenario: 5 V/3 A hot-swap circuit protecting backplane slots in modular test instrumentation. IC Role / Device Role / Timing Role: Single-channel configured as load switch with controlled slew rate via gate resistor. Use Value: 1.0 V VGS(th) enables precise turn-on control using DAC-driven gate bias, limiting inrush current to <1.5 A. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | Single-channel 30 V/7.5 A, SO-8; RDS(on) = 26 mΩ @ 10 V; no dual-die integration | Requires two devices for same functionality; higher layout area and gate drive complexity | Select when higher current per channel is needed and board space permits discrete placement |
| SI6926ADQ-T1-GE3 | Dual 30 V/6.5 A, SO-8; RDS(on) = 32 mΩ @ 10 V; Qg = 15.5 nC; trr = 22 ns | Slightly faster switching but slower body diode recovery than ZXMN3A06DN8TA | Select when lower gate charge dominates system efficiency over freewheeling performance |
Compared with DMN3026LSD-13 and SI6926ADQ-T1-GE3, ZXMN3A06DN8TA offers superior thermal coupling between channels and the lowest body diode reverse recovery charge (11.6 nC), making it optimal for high-frequency synchronous rectification where diode commutation loss is critical.
Availability
ZXMN3A06DN8TA is available at Aetrix Electronics and suitable for DC–DC converters, motor control half-bridges, and hot-swap power switches requiring stable component supply across industrial, telecom, and embedded power designs.
Supply support for ZXMN3A06DN8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its high-performance analog and power portfolio with focus on efficiency-critical applications.
ZXMN3A06DN8TA belongs to the Zetex TrenchMOS™ family, engineered specifically for high-frequency, low-voltage power conversion where dual-channel matching and fast body diode recovery are essential.
FAQ
What is the maximum safe operating junction temperature for ZXMN3A06DN8TA?
The absolute maximum junction temperature is +150 °C, and the device is characterized for continuous operation up to this limit. Derating begins at 25 °C ambient with a linear factor of 17.3 mW/°C when mounted on FR4 PCB with both dies active, ensuring reliable thermal performance in enclosed industrial enclosures.
Can ZXMN3A06DN8TA be used in a high-side switch configuration?
Yes - each channel operates as an independent N-channel MOSFET. For high-side use, a gate driver capable of providing VGS ≥ 10 V above the source potential is required. Pin 5 serves as Channel 2 source and can be elevated to load voltage, enabling bootstrap or isolated gate drive implementation.
Is the body diode in ZXMN3A06DN8TA suitable for reverse recovery in hard-switched topologies?
Yes - the body diode exhibits trr = 17.8 ns and Qrr = 11.6 nC at 25 °C, verified under 3.5 A forward current and 100 A/µs di/dt. This performance supports reliable operation in synchronous buck and flyback converters switching up to 1 MHz without external diode paralleling.
Does ZXMN3A06DN8TA have integrated ESD protection on gate terminals?
Yes - gate-source leakage IGSS is specified at ±100 nA at ±20 V, indicating robust oxide integrity. The device meets HBM ESD rating of ≥2 kV per JESD22-A114, confirmed in Zetex qualification reports, making it suitable for assembly environments without additional gate protection networks.
ZXMN3A06DN8TA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 4.9A
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 17.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 796pF @ 25V
- Power - Max:
- 1.8W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
ZXMN3A06DN8TA FAQ
1.How can I place an order for ZXMN3A06DN8TA through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXMN3A06DN8TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXMN3A06DN8TA reliable?
The price and inventory of ZXMN3A06DN8TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN3A06DN8TA is usually 5 days.
3.What payment methods are accepted for ZXMN3A06DN8TA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMN3A06DN8TA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXMN3A06DN8TA?
ZXMN3A06DN8TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXMN3A06DN8TA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXMN3A06DN8TA?
For technical support, including ZXMN3A06DN8TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN3A06DN8TA requirements.
6.How does Aetrix verify that ZXMN3A06DN8TA is sourced from the original manufacturer or authorized distributors?
All ZXMN3A06DN8TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN3A06DN8TA meets industry standards.
7.What is the process for return or replacement of ZXMN3A06DN8TA?
All ZXMN3A06DN8TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN3A06DN8TA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXMN3A06DN8TA part is unused and in its original packaging.
Return procedure for ZXMN3A06DN8TA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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