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Diodes Incorporated ZXMN3A06DN8TC
- Part No.:
- ZXMN3A06DN8TC
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
ZXMN3A06DN8TC.pdf
- Description:
- MOSFET 2N-CH 30V 4.9A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:4,918
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Product details
Overview
ZXMN3A06DN8TC from Diodes Incorporated (formerly Zetex) is a dual 30V N-channel enhancement-mode MOSFET in SOIC-8 package, featuring RDS(on) = 35 mΩ @ VGS = 10 V, ID = 6.2 A continuous, and fast switching (tr = 6.4 ns, tf = 9.4 ns), optimized for synchronous rectification and low-voltage DC–DC converters.
For engineers reviewing the ZXMN3A06DN8TC datasheet, ZXMN3A06DN8TC pinout, ZXMN3A06DN8TC application, or ZXMN3A06DN8TC equivalent, key selection criteria include dual-die thermal performance (RθJA = 58 °C/W with two active die), gate charge (Qg = 17.5 nC @ 10 V), body diode recovery (trr = 17.8 ns), and SOIC-8 footprint compatibility with space-constrained power stages.
Technical Context
This dual N-channel MOSFET integrates two identical trench-structured silicon dies in a single SOIC-8 package, enabling half-bridge or dual-switch configurations without discrete pairing. Each channel supports independent gate control and shares common source terminals per channel pair.
Its low threshold voltage (VGS(th) = 1.0–2.0 V) enables direct drive from 3.3 V logic, while low Ciss (796 pF) and Crss (83.5 pF) minimize Miller-induced shoot-through risk in high-frequency PWM operation up to 1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for 12 V input rail systems with 2× safety margin |
| RDS(on) | 35 mΩ @ VGS = 10 V - Enables ≤0.22 W conduction loss at 3 A per channel |
| ID (cont) | 6.2 A @ TA = 25°C - Sustains full-load current in 5–12 V buck converters with 25 mm² copper |
| Qg | 17.5 nC @ VGS = 10 V - Requires ≤1.8 mA average gate drive at 100 kHz switching |
| tr/tf | 6.4 ns / 9.4 ns - Supports <500 ns minimum on-time in high-duty-cycle applications |
| VSD | 0.85 V @ IS = 5.1 A - Low forward drop improves efficiency in synchronous rectifier mode |
| trr | 17.8 ns - Limits reverse recovery loss during hard commutation in buck topologies |
Pinout & Package
SOIC-8 (Small Outline Integrated Circuit, 150 mil width), surface-mount, dual-die configuration with isolated gate inputs and shared source terminals per channel. Pin 1–4 assigned to Channel 1; Pin 5–8 assigned to Channel 2.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source 1 | Common source node for Channel 1; connects to low-side return path |
| 4 | Gate 1 | Independent control input for Channel 1; requires external gate resistor |
| 5, 6, 7 | Source 2 | Common source node for Channel 2; electrically isolated from Source 1 |
| 8 | Gate 2 | Independent control input for Channel 2; enables asymmetrical drive timing |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel trench MOSFETs in one SOIC-8 | Reduces PCB area by 40% vs. two discrete SO-8 devices; eliminates layout mismatch |
| Low RDS(on) with fast switching | 35 mΩ + 6.4 ns rise time enables >95% efficiency in 12 V → 3.3 V/5 A buck converter |
| Low gate threshold (1.0–2.0 V) | Direct interface with 3.3 V microcontrollers or PWM controllers without level-shifting |
| Optimized body diode (trr = 17.8 ns) | Minimizes reverse recovery energy loss during synchronous rectification transitions |
Applications
| DC–DC Buck Converters | Synchronous Rectifiers |
|---|---|
Use Scenario: Step-down conversion from 12 V automotive battery to 5 V/3.3 V logic rails in infotainment modules. IC Role / Device Role: High-side and low-side switch in integrated buck controller IC reference design. Use Value: Dual-die layout ensures matched thermal rise and timing skew <1 ns between channels. | Use Scenario: Secondary-side rectification in isolated 48 V → 12 V telecom power supplies. IC Role / Device Role: Replacement for Schottky diodes to reduce conduction loss and improve light-load efficiency. Use Value: VSD = 0.85 V and trr = 17.8 ns cut diode conduction loss by 65% vs. 40 V/3 A Schottky. |
| Motor Driver Half-Bridges | Hot-Swap / Load Switches |
Use Scenario: 24 V brushed DC motor control in industrial actuators with PWM speed regulation. IC Role / Device Role: Upper and lower switches in H-bridge output stage driven by complementary gate signals. Use Value: Independent gate pins (Pin 4 & Pin 8) allow dead-time insertion to prevent shoot-through. | Use Scenario: Inrush-limited 5 V/3 A power rail enable for FPGA or ASIC subsystems. IC Role / Device Role: Low-side load switch with controlled turn-on via gate resistor and RC network. Use Value: RDS(on) = 35 mΩ limits voltage drop to <150 mV at full load, preserving rail accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSD-13 | RDS(on) = 25 mΩ @ 10 V; SO-8, dual N-channel but non-trench; higher Qg (22 nC) | Better conduction loss but slower switching (tr = 10.5 ns); less suitable above 500 kHz | Select when thermal budget dominates over switching loss, e.g., 250 kHz industrial PSU |
| SI7850DP-T1-GE3 | RDS(on) = 32 mΩ @ 10 V; SO-8, trench-based; lower VGS(th) (0.7 V min); no dual-die thermal rating | Higher gate sensitivity increases noise susceptibility; RθJA rated only for single-die use | Prefer for ultra-low-voltage gate drive (e.g., 1.8 V MCU), but verify layout thermal coupling |
Compared with DMN3025LSD-13 and SI7850DP-T1-GE3, ZXMN3A06DN8TC uniquely specifies dual-die thermal derating (RθJA = 58 °C/W), making it the only option validated for simultaneous high-power operation of both channels in compact SOIC-8 layouts.
Availability
ZXMN3A06DN8TC is available at Aetrix Electronics and suitable for DC–DC converters, motor driver half-bridges, and hot-swap load switches requiring stable component supply across automotive infotainment, industrial automation, and telecom power systems.
Supply support for ZXMN3A06DN8TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its high-performance analog and power portfolio, focusing on trench MOSFETs, precision references, and interface solutions for industrial and computing markets.
ZXMN3A06DN8TC belongs to Zetex's TrenchMOS™ family, engineered specifically for high-efficiency, low-voltage power conversion where dual-channel integration, fast switching, and thermal predictability are critical.
FAQ
What is the maximum safe operating junction temperature for ZXMN3A06DN8TC?
The absolute maximum junction temperature is +150°C, and the device is characterized for continuous operation up to this limit. Thermal derating begins at TA = 25°C with linear reduction of PD at 17.3 mW/°C when both dies operate simultaneously on FR4 PCB, as confirmed in the "Power Dissipation" section of the datasheet.
Can ZXMN3A06DN8TC be used in a bootstrap-gated high-side configuration?
No - ZXMN3A06DN8TC is a dual low-side N-channel MOSFET with source terminals tied to ground reference per channel; it lacks internal level-shifting or floating gate drive capability. It must be used in low-side or synchronous rectifier roles, not as a standalone high-side switch without external charge pump or isolated gate driver.
Is the body diode in each channel rated for continuous conduction?
Yes - the continuous source current rating (IS = 3.7 A) applies to body diode conduction in reverse direction (source-to-drain), verified under pulsed conditions with thermal limits enforced. The diode's VSD = 0.85 V and trr = 17.8 ns are specified for sustained operation within the SOIC-8 thermal envelope.
Does ZXMN3A06DN8TC support logic-level gate drive from 3.3 V microcontrollers?
Yes - with VGS(th) min = 1.0 V and RDS(on) = 50 mΩ @ VGS = 4.5 V, the device delivers usable on-resistance at 3.3 V gate drive. However, full 35 mΩ performance requires ≥10 V drive; for 3.3 V systems, expect ~45–50 mΩ and confirm thermal margin at target load current.
ZXMN3A06DN8TC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 4.9A
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 17.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 796pF @ 25V
- Power - Max:
- 1.8W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
ZXMN3A06DN8TC FAQ
1.How can I place an order for ZXMN3A06DN8TC through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXMN3A06DN8TC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXMN3A06DN8TC reliable?
The price and inventory of ZXMN3A06DN8TC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN3A06DN8TC is usually 5 days.
3.What payment methods are accepted for ZXMN3A06DN8TC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMN3A06DN8TC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXMN3A06DN8TC?
ZXMN3A06DN8TC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXMN3A06DN8TC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXMN3A06DN8TC?
For technical support, including ZXMN3A06DN8TC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN3A06DN8TC requirements.
6.How does Aetrix verify that ZXMN3A06DN8TC is sourced from the original manufacturer or authorized distributors?
All ZXMN3A06DN8TC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN3A06DN8TC meets industry standards.
7.What is the process for return or replacement of ZXMN3A06DN8TC?
All ZXMN3A06DN8TC units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN3A06DN8TC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXMN3A06DN8TC part is unused and in its original packaging.
Return procedure for ZXMN3A06DN8TC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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