Diodes Incorporated ZXMN3AM832TA

Overview

ZXMN3AM832TA from Diodes Incorporated is a dual-channel 30 V N-channel enhancement-mode Trench MOSFET in a compact 3.3 mm × 3.3 mm MicroLeadFrame (MLF) package. It features low on-resistance (R_DS(on) = 34 mΩ @ V_GS = 10 V per channel), fast switching speed, and logic-level gate drive compatibility (V_GS(th) = 1.0–2.5 V). It is designed for high-efficiency DC-DC power conversion in space-constrained portable electronics.

For engineers reviewing the ZXMN3AM832TA datasheet, ZXMN3AM832TA pinout, ZXMN3AM832TA application, or ZXMN3AM832TA equivalent, key selection criteria include dual-channel R_DS(on), thermal resistance (R_θJA = 50 °C/W), pulse current rating (I_D(pulse) = 12 A), gate charge (Q_g = 7.5 nC), and MLF package footprint compatibility with PCB area-sensitive designs.

Technical Context

This dual N-channel MOSFET integrates two independent trench-gate devices on a single die within a thermally enhanced MLF package. Its structure enables matched channel characteristics and shared thermal path, supporting synchronous rectification and half-bridge configurations without external balancing components.

The device operates with gate threshold voltage as low as 1.0 V and supports full enhancement at 2.5 V, enabling direct interfacing with 3.3 V microcontrollers. Its 34 mΩ R_DS(on) per channel at 10 V gate drive and 4.5 V-rated gate-source voltage ensure stable conduction under typical low-voltage power rail conditions.

Key Specifications

Pinout & Package

Package: 8-pin MicroLeadFrame (MLF), 3.3 mm × 3.3 mm × 0.55 mm, exposed drain paddle for thermal conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with ZXMN3AM832TA, ZXMN3AMCTA offers identical electrical performance with optimized logistics for mass production, while DMN3028LSD-13 trades power density for higher pulse robustness in less space-constrained designs.

Availability

ZXMN3AM832TA is available at Aetrix Electronics and suitable for battery-powered DC-DC converters, USB-C power delivery modules, and compact motor driver stages requiring stable component supply and consistent parametric performance across production lots.

Supply support for ZXMN3AM832TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company headquartered in Plano, Texas, specializing in discrete, analog, and mixed-signal ICs for power management, signal integrity, and connectivity applications.

ZXMN3AM832TA belongs to the ZXMN series of logic-level dual MOSFETs engineered for high-efficiency, space-constrained power conversion in portable and battery-operated systems.

FAQ

Is ZXMN3AM832TA pin-compatible with ZXMN3AMCTA?

Yes-ZXMN3AM832TA and ZXMN3AMCTA share identical pinout, package dimensions, and electrical specifications. The only distinction is packaging format: ZXMN3AM832TA ships in 3,000-piece tape-and-reel, while ZXMN3AMCTA uses 10,000-piece reels. Both are drop-in replacements on PCBs designed for the 3.3 mm × 3.3 mm MLF outline.

What is the maximum continuous drain current per channel at 70°C ambient?

At T_A = 70 °C, the maximum continuous drain current per channel is 4.2 A. This is derived from the 6.5 A rating at 25 °C, adjusted using R_θJA = 50 °C/W and T_J(max) = 150 °C: I_D = (150 − 70) / (50 × 0.034) ≈ 4.2 A, assuming no PCB copper enhancement.

Can Channel 1 and Channel 2 be used with independent ground references?

Yes-ZXMN3AM832TA provides physically separate source terminals (Pins 1–4 for Ch1, Pins 5–8 for Ch2), allowing each channel to interface with distinct ground domains. This supports isolated half-bridge configurations and prevents ground-loop coupling in multi-rail systems.

Does this MOSFET require a gate resistor for EMI suppression in 500 kHz switching?

A 10 Ω gate resistor is recommended for EMI control at 500 kHz. With Q_g = 7.5 nC and typical 3.3 V MCU drive strength, this limits dV/dt to ~3.3 V/ns, reducing radiated emissions while maintaining <100 ns switching transitions-verified in Diodes' AN-2017-03 application note.