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Diodes Incorporated ZXMN3AMCTA
- Part No.:
- ZXMN3AMCTA
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-WDFN Exposed Pad
- Datasheet:
-
ZXMN3AMCTA.pdf
- Description:
- MOSFET 2N-CH 30V 3.7A 8DFN
- Quantity:
- Payment:
- Shipping:
Inventory:41
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Product details
Overview
ZXMN3AMCTA from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a DFN3020B-8 package, rated for 30V VDS, 120mΩ RDS(on) at VGS = 10V, and 3.7A continuous drain current at TA = 25°C. It integrates two matched silicon dies optimized for low conduction loss and fast switching in compact power management circuits such as DC-DC converter synchronous rectification and battery disconnect switches.
For engineers reviewing the ZXMN3AMCTA datasheet, ZXMN3AMCTA pinout, ZXMN3AMCTA application, or ZXMN3AMCTA equivalent, key selection criteria include its dual-die thermal coupling behavior, 0.8mm profile for space-constrained portable designs, AEC-Q101 qualification for automotive-grade reliability, and verified gate charge (Qg = 3.9nC @ 10V) for accurate driver sizing.
Technical Context
This dual MOSFET uses two independent N-channel silicon dies in a single DFN3020B-8 package with shared thermal path to the exposed drain pads. Each channel supports independent gate control (G1/S1/D1 and G2/S2/D2), enabling use in dual-phase buck converters or redundant load switches.
Its RDS(on) of 120mΩ @ 10V and 180mΩ @ 4.5V reflects optimized trench-gate process for low-voltage drive compatibility, while tD(off) = 6.6ns and Qgd = 0.9nC indicate fast turn-off capability suitable for high-frequency (>1MHz) switching topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 30V - Supports input rails up to 24V nominal systems with 20% margin |
| RDS(on) @ 10V | 120mΩ - Enables ≤0.45W conduction loss at 3A per channel |
| RDS(on) @ 4.5V | 180mΩ - Ensures functional operation with 3.3V logic-level gate drive |
| ID cont @ 25°C | 3.7A - Per-channel rating under standard PCB thermal conditions (8 cm², 2oz Cu) |
| Qg @ 10V | 3.9nC - Determines gate driver current requirement for <100ns switching transitions |
| tr/tf | 2.3ns/2.9ns - Confirms suitability for >5MHz PWM in point-of-load regulators |
| RθJA (1oz Cu) | 111°C/W - Defines thermal derating slope on cost-optimized 1oz copper PCBs |
Pinout & Package
Package: DFN3020B-8, 3.0 × 2.0 mm footprint, 0.8 mm height, thermally enhanced with dual exposed drain pads (D1/D2) on bottom side.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D2) | Drain 2 | Power output terminal for second MOSFET channel; electrically isolated from D1 but thermally coupled |
| Pin 2 (S2) | Source 2 | Return path for channel 2; tied to internal source metallization, not connected to substrate |
| Pin 3 (G2) | Gate 2 | Control input for channel 2; requires 100nF local decoupling due to 20pF Crss |
| Pin 4 (D1) | Drain 1 | Power output terminal for first MOSFET channel; shares thermal pad with D2 |
| Pin 5 (S1) | Source 1 | Return path for channel 1; enables independent source referencing for high-side sensing |
| Pin 6 (G1) | Gate 1 | Control input for channel 1; electrically isolated from G2 to support asynchronous switching |
| Pads D1/D2 (bottom) | Exposed Drain Thermal Pads | Primary heat dissipation path; must be soldered to ≥2cm² copper pour for rated PD = 1.5W |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile DFN3020B-8 | 0.8mm height enables integration into <1.2mm-thick handheld device stacks |
| Thermally efficient layout | Dual exposed drain pads reduce RθJA by 32% vs. SOT23-6 under identical PCB conditions |
| 6mm² footprint | 50% smaller board area than TSOP6, freeing space for adjacent passive components |
| AEC-Q101 qualified | Validated for automotive ambient temperature range (-40°C to +125°C case) |
| Halogen & antimony free | Complies with JEDEC JS709B and IPC-1752A green material requirements |
Applications
| DC-DC Converter Synchronous Rectifier | Battery Disconnect Switch |
|---|---|
Use Scenario: Dual-phase 12V-to-3.3V buck converter in automotive infotainment head unit requiring <90% efficiency at 2A/channel. IC Role / Device Role / Timing Role: Low-side synchronous rectifier pair replacing Schottky diodes; each channel operates 180° out-of-phase with independent gate timing. Use Value: Reduces conduction loss by 42% versus single-channel alternatives, lowering junction temperature rise by 18°C at full load. | Use Scenario: Dual-battery isolation in telematics control unit, where main and backup Li-ion packs must be independently switched. IC Role / Device Role / Timing Role: Back-to-back configured N-MOSFET pair providing bidirectional blocking and controlled turn-on sequencing. Use Value: Eliminates need for external body-diode bypass paths due to matched VSD = 0.85V across both channels. |
| Portable USB-C Power Delivery | Industrial Sensor Node Power Gating |
Use Scenario: Input power path manager in USB-C PD sink device supporting 20V/3A input with dynamic voltage scaling. IC Role / Device Role / Timing Role: Dual-channel high-side switch controlling VBUS routing to buck controller and Type-C CC logic block. Use Value: Enables <5ms fault response via independent gate control, meeting USB PD 3.1 fast role swap timing. | Use Scenario: Ultra-low-power industrial wireless sensor node with duty-cycled MCU and RF transceiver, requiring sub-1μA off-state leakage. IC Role / Device Role / Timing Role: Load switch for analog front-end and digital subsystems, driven by RTC alarm signal. Use Value: Achieves 0.3μA total system shutdown current using dual-channel staggered turn-off to suppress transient coupling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3028LSD-13 | RDS(on) = 28mΩ @ 10V (lower), but larger SO-8 package (4.9 × 6.0 mm) | Higher power handling (PD = 3.1W) but incompatible with ultra-thin form factors | Select when thermal budget exceeds 2.5W and PCB space allows SO-8 mounting |
| SI7157DP-T1-GE3 | Single-channel 30V MOSFET with identical DFN3020-8 footprint but no dual-die integration | Requires two separate placements for dual functionality, increasing layout complexity and parasitic inductance | Choose only if channel independence and thermal coupling are undesirable |
Compared with DMN3028LSD-13 and SI7157DP-T1-GE3, ZXMN3AMCTA uniquely delivers dual-channel operation in minimal area with matched die characteristics-critical for phase-balanced power stages and space-constrained battery management systems where thermal crosstalk between channels improves current sharing accuracy.
Availability
ZXMN3AMCTA is available at Aetrix Electronics and suitable for DC-DC converters, battery disconnect switches, and portable USB-C power delivery systems requiring stable component supply and AEC-Q101-compliant reliability.
Supply support for ZXMN3AMCTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
ZXMN3AMCTA belongs to Diodes' ZXMN series of low-voltage power MOSFETs engineered specifically for high-efficiency, space-constrained power conversion in automotive, computing, and portable electronics.
FAQ
What is the maximum allowable gate-source voltage for ZXMN3AMCTA?
The absolute maximum VGS rating is ±20V, as specified in the Maximum Ratings table. Operation beyond this limit risks irreversible gate oxide damage. For reliable long-term performance, gate drive should be limited to +12V maximum with tight transient suppression, especially in automotive environments with load-dump spikes.
How does thermal coupling between the two MOSFET dies affect power derating?
When both channels operate simultaneously, thermal resistance rises from 83.3°C/W (one active die) to 111°C/W (two active die), reducing safe continuous power from 1.5W to 1.13W at TA = 25°C. Layout must allocate ≥4cm² shared copper area beneath both drain pads to maintain this derated limit.
Can ZXMN3AMCTA be used in linear regulator applications?
No - it is not characterized or rated for linear-mode operation. The Safe Operating Area (SOA) curve shows pulsed limits only, and RDS(on) variation over temperature is not specified for analog biasing. Its design targets switching applications with duty cycles <2% in pulse testing.
Is the DFN3020B-8 package compatible with standard reflow profiles for lead-free assembly?
Yes - it meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 and is qualified for peak reflow temperatures up to 260°C. Recommended profile follows IPC-7095C: ramp rate ≤3°C/s, preheat 150–200°C for 90–120s, soak 200–220°C for 60–90s, and peak 235–245°C for 20–40s.
ZXMN3AMCTA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-WDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 3.7A (Ta)
- Rds On (Max) @ Id, Vgs:
- 120mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 2.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 190pF @ 25V
- Power - Max:
- 1.7W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN3020B-8
ZXMN3AMCTA FAQ
1.How can I place an order for ZXMN3AMCTA through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXMN3AMCTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXMN3AMCTA reliable?
The price and inventory of ZXMN3AMCTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN3AMCTA is usually 5 days.
3.What payment methods are accepted for ZXMN3AMCTA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMN3AMCTA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXMN3AMCTA?
ZXMN3AMCTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXMN3AMCTA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXMN3AMCTA?
For technical support, including ZXMN3AMCTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN3AMCTA requirements.
6.How does Aetrix verify that ZXMN3AMCTA is sourced from the original manufacturer or authorized distributors?
All ZXMN3AMCTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN3AMCTA meets industry standards.
7.What is the process for return or replacement of ZXMN3AMCTA?
All ZXMN3AMCTA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN3AMCTA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXMN3AMCTA part is unused and in its original packaging.
Return procedure for ZXMN3AMCTA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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