Diodes Incorporated ZXMN3B04N8TC
- Part No.:
- ZXMN3B04N8TC
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
ZXMN3B04N8TC.pdf
- Description:
- MOSFET N-CH 30V 7.2A 8SO
- Quantity:
- Payment:

- Shipping:

Inventory:4,573
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Product details
Overview
ZXMN3B04N8TC from Diodes Incorporated is a 30V N-channel enhancement-mode Trench MOSFET optimized for low-voltage power management, featuring RDS(ON) = 0.021Ω @ VGS = 4.5V, 7.2A continuous drain current at +25°C, and 2.5V gate drive capability. It serves as a high-efficiency synchronous rectifier or load switch in DC-DC converters and motor control circuits.
For engineers reviewing the ZXMN3B04N8TC datasheet, ZXMN3B04N8TC pinout, ZXMN3B04N8TC application, or ZXMN3B04N8TC equivalent, key selection criteria include its low threshold voltage (0.7V typ), fast switching (tR = 11.5ns), SO-8 thermal performance (RθJA = 41.4°C/W), body diode forward voltage (0.85V @ 8A), and RoHS-compliant green packaging.
Technical Context
This MOSFET employs Diodes Incorporated's proprietary Trench structure to simultaneously minimize conduction loss and switching energy. Its 2.5V logic-level gate drive enables direct interfacing with 3.3V microcontrollers, while the integrated body diode supports bidirectional current flow in H-bridge motor drivers.
The device operates across –55°C to +150°C junction temperature range and maintains stable RDS(ON) up to +70°C ambient (7.3A ID). Dynamic parameters-including Qg = 23.1nC, Ciss = 2480pF, and tRR = 17.9ns-support high-frequency PWM operation in buck converters up to 1MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum blocking voltage for 12V/24V rail applications |
| RDS(ON) | 0.021Ω @ VGS = 4.5V - Enables ≤150mW conduction loss at 7.2A |
| ID | 8.9A @ TA = +25°C - Supports high-current load switching without forced cooling |
| VGS(TH) | 0.7V (min) - Ensures reliable turn-on with 2.5V–3.3V logic outputs |
| Qg | 23.1nC - Determines gate driver power requirement for 500kHz–1MHz switching |
| tR/tF | 11.5ns / 16.6ns - Limits switching transition losses in high-frequency SMPS |
| VSD | 0.85V @ IS = 8A - Reduces reverse conduction loss in synchronous rectification |
Pinout & Package
Package: SO-8, surface-mount, lead-free, halogen-free, JEDEC-standard footprint (5.0mm × 6.0mm × 1.5mm height).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source | Common source connection for internal parallel FET cells; tied to PCB ground plane for thermal and EMI control |
| 5 | Gate | Control input requiring <23.1nC charge for full enhancement; sensitive to ESD (±12V max) |
| 6, 7, 8 | Drain | Main power path terminal; electrically and thermally connected to exposed drain pad under package |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 2.5V drive | 0.040Ω @ VGS = 2.5V - Enables efficient operation directly from 2.5V logic rails |
| Fast switching with low Qgd | Qgd = 6.2nC - Minimizes Miller plateau time and improves hard-switching robustness |
| Enhanced body diode performance | tRR = 17.9ns, QRR = 10nC - Reduces voltage spikes and EMI in freewheeling paths |
| Thermally optimized SO-8 | RθJA = 41.4°C/W (FR-4, t ≤10s) - Allows 3W+ continuous dissipation with minimal copper area |
Applications
| DC-DC Buck Converter | Motor Drive Half-Bridge |
|---|---|
Use Scenario: High-efficiency 5V-to-3.3V point-of-load converter in networking equipment. IC Role / Device Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss. Use Value: Achieves >94% efficiency at 5A load by cutting rectifier loss from 0.45W to 0.11W. | Use Scenario: 12V brushed DC motor control in industrial actuators. IC Role / Device Role: Low-side switch in half-bridge topology with integrated body diode freewheeling. Use Value: Enables 20kHz PWM without external flyback diode, reducing BOM count and board space. |
| USB-C Power Delivery Switch | Hot-Swap Load Disconnect |
Use Scenario: 20V/3A USB PD sink path protection in portable monitors. IC Role / Device Role: Input-side power switch with fast turn-off for overcurrent fault response. Use Value: Limits fault energy via 45A pulsed rating and 9ns turn-on delay during transient events. | Use Scenario: Controlled 5V rail enable/disable in server backplanes. IC Role / Device Role: Inrush-limited load switch with low-threshold gate control. Use Value: Prevents system brownout using 0.7V VGS(TH) and soft-start compatible gate capacitance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSD-13 | RDS(ON) = 0.025Ω @ 4.5V; higher Qg = 28nC; same SO-8 package | Marginally slower switching (tR = 14ns); less suitable for >500kHz designs | Prefer when cost sensitivity outweighs switching loss optimization |
| SI2304DS-T1-GE3 | RDS(ON) = 0.045Ω @ 4.5V; lower ID = 3.2A; SOT-23 package | Not pin-compatible; limited thermal capacity; unsuitable for >2A continuous loads | Select only for space-constrained, low-current bias or signal switching |
Compared with DMN3025LSD-13 and SI2304DS-T1-GE3, ZXMN3B04N8TC delivers superior conduction efficiency at high current and better thermal headroom in SO-8, making it optimal for compact, high-density power stages where both RDS(ON) and Qg critically impact system efficiency.
Availability
ZXMN3B04N8TC is available at Aetrix Electronics and suitable for DC-DC converters, motor control modules, USB-C power delivery systems, and hot-swap load disconnect circuits requiring stable component supply and long-term manufacturability.
Supply support for ZXMN3B04N8TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
ZXMN3B04N8TC belongs to Diodes' TrenchMOS® logic-level power MOSFET product line, engineered specifically for high-efficiency, low-voltage power conversion in space-constrained consumer, computing, and industrial applications.
FAQ
What is the maximum safe operating junction temperature for ZXMN3B04N8TC?
The absolute maximum junction temperature is +150°C per the datasheet. Continuous operation above +125°C requires derating power dissipation per the linear derating factor of 24 mW/°C (Note 6), and thermal design must ensure RθJA does not exceed 41.4°C/W under actual PCB layout and airflow conditions.
Can ZXMN3B04N8TC be used in avalanche energy applications?
No-ZXMN3B04N8TC is not rated for repetitive avalanche operation. Its datasheet specifies only unclamped inductive switching (UIS) capability indirectly via pulsed drain current (IDM = 45A), and no EAS value is provided. Designers must implement external clamping or snubbing for inductive load switching.
Is the SO-8 package of ZXMN3B04N8TC compatible with standard reflow profiles?
Yes-the device complies with J-STD-020 moisture sensitivity level 1 and supports standard Pb-free reflow profiles (peak 260°C, 20–40 sec). The matte tin finish on copper leadframe ensures solderability per MIL-STD-202, Method 208, and the green molding compound meets UL 94V-0 flammability requirements.
Does ZXMN3B04N8TC require a gate resistor for stability in switching applications?
A gate resistor (typically 2.2–10Ω) is recommended to dampen ringing caused by gate loop inductance and prevent spurious turn-on due to dV/dt coupling. While not mandatory for basic functionality, omitting it risks oscillation during fast transitions, especially with high-side drive or long PCB traces, and may increase EMI emissions.
ZXMN3B04N8TC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 7.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 23.1 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2480 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
ZXMN3B04N8TC FAQ
1.How can I place an order for ZXMN3B04N8TC through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXMN3B04N8TC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXMN3B04N8TC reliable?
The price and inventory of ZXMN3B04N8TC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN3B04N8TC is usually 5 days.
3.What payment methods are accepted for ZXMN3B04N8TC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMN3B04N8TC transactions.
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ZXMN3B04N8TC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXMN3B04N8TC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXMN3B04N8TC?
For technical support, including ZXMN3B04N8TC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN3B04N8TC requirements.
6.How does Aetrix verify that ZXMN3B04N8TC is sourced from the original manufacturer or authorized distributors?
All ZXMN3B04N8TC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN3B04N8TC meets industry standards.
7.What is the process for return or replacement of ZXMN3B04N8TC?
All ZXMN3B04N8TC units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN3B04N8TC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXMN3B04N8TC part is unused and in its original packaging.
Return procedure for ZXMN3B04N8TC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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