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Diodes Incorporated ZXMN3F31DN8TA
- Part No.:
- ZXMN3F31DN8TA
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
ZXMN3F31DN8TA.pdf
- Description:
- MOSFET 2N-CH 30V 5.7A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:5,274
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Product details
Overview
ZXMN3F31DN8TA from Diodes Incorporated (acquired Zetex Semiconductors in 2008) is a dual N-channel enhancement-mode Trench MOSFET in SO-8 package, rated for 30V VDS, 7.3A continuous drain current at 10V gate drive, and 0.024Ω RDS(on) at VGS = 10V. It delivers low conduction loss in high-efficiency DC-DC converters and synchronous rectification stages.
For engineers reviewing the ZXMN3F31DN8TA datasheet, ZXMN3F31DN8TA pinout, ZXMN3F31DN8TA application, or ZXMN3F31DN8TA equivalent, key selection criteria include dual-channel thermal coupling behavior, 4.5V logic-level gate drive capability, body diode reverse recovery time (12 ns), and SO-8 package power dissipation limits under PCB copper coverage conditions.
Technical Context
This dual MOSFET integrates two matched N-channel devices in a single SO-8 package with shared thermal mass. Its Trench process enables low RDS(on) at 4.5V gate drive (0.039Ω @ 6A), supporting direct interface with 3.3V/5V microcontrollers without level-shifting.
The device features fast switching characteristics: 2.9ns turn-on delay, 8ns fall time, and 12.9nC total gate charge. Its body diode exhibits 0.82–1.2V forward voltage at 1.7A and 12ns reverse recovery time-critical for synchronous buck converter efficiency and shoot-through immunity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 30V - supports input rails up to 24V nominal systems with margin for transients |
| RDS(on) @ 10V | 0.024Ω - enables ≤1.2W conduction loss at 7A in high-current paths |
| RDS(on) @ 4.5V | 0.039Ω - ensures full enhancement with standard logic-level drivers |
| Qg | 12.9nC - determines gate driver current requirement (~1.3A peak for 10ns rise) |
| trr | 12ns - minimizes dead-time losses and EMI in synchronous rectification |
| PD (SO-8, 25mm×25mm FR4) | 1.25W - sets maximum continuous power under standard PCB layout constraints |
| VGS(th) | 1.0–3.0V - guarantees turn-on across temperature and process variation with 3.3V logic |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin Small Outline). Dimensions per Zetex Issue 2 datasheet: 4.80–5.00 mm length, 3.80–4.00 mm width, 1.35–1.75 mm height, 1.27 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | Main current path for first MOSFET; electrically tied to exposed drain pad (Pin 5/6/7/8) |
| S1 | Source of Channel 1 | Reference node for Channel 1; connects to local ground or low-side switch node |
| G1 | Gate of Channel 1 | Control terminal requiring ~2.5nC charge for full turn-on; sensitive to ESD |
| D2 | Drain of Channel 2 | Independent high-current path; shares thermal mass but not electrical connection with D1 |
| S2 | Source of Channel 2 | Isolated source node enabling dual low-side or half-bridge configurations |
| G2 | Gate of Channel 2 | Separate control input; allows independent timing or paralleled operation |
| Exposed Pad (Pins 5–8) | Common Drain Thermal Pad | Primary heat transfer path to PCB copper; must be soldered for rated power dissipation |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel topology | Enables compact half-bridge or dual low-side switching without external pairing |
| Logic-level gate drive | Guaranteed RDS(on) ≤0.039Ω at VGS = 4.5V - eliminates need for gate driver ICs in 3.3V/5V systems |
| Low Qgd/Qg ratio | Qgd = 2.52nC / Qg = 12.9nC → 19.5% - improves hard-switching robustness and dV/dt immunity |
| Fast body diode | trr = 12ns, Qrr = 4.8nC - reduces switching loss and voltage overshoot during freewheeling |
| Thermally optimized SO-8 | Exposed drain pad (Pins 5–8) provides RJL = 53°C/W - enables 1.8W dissipation with proper PCB copper |
Applications
| DC-DC Synchronous Buck Converter | Load Switching for Dual Power Rails |
|---|---|
Use Scenario: High-efficiency 12V-to-3.3V conversion in industrial PLC I/O modules. IC Role / Device Role: Dual low-side switch: Channel 1 as synchronous rectifier, Channel 2 as auxiliary rail switch. Use Value: 0.024Ω RDS(on) cuts conduction loss by >40% vs. discrete Schottky + MOSFET solutions; SO-8 footprint saves 35% board area. | Use Scenario: Independent enable control of 5V and 3.3V subsystems in embedded gateway. IC Role / Device Role: Dual-channel load switch with separate gate inputs and common drain thermal pad. Use Value: Eliminates two discrete MOSFETs + gate resistors; 0.039Ω RDS(on) at 4.5V enables direct MCU GPIO control without level shifters. |
| Motor Driver Half-Bridge Stage | LED Backlight Boost Converter |
Use Scenario: 24V brushed DC motor control in HVAC actuator with PWM speed regulation. IC Role / Device Role: Low-side switches in H-bridge configuration; Channel 1 controls forward, Channel 2 reverse. Use Value: Matched RDS(on) and thermal coupling ensure balanced current sharing; 33A pulsed rating handles motor stall currents. | Use Scenario: 12V-input boost converter driving 4-series white LEDs (18V string) in medical display backlight. IC Role / Device Role: Synchronous rectifier replacing Schottky diode to improve efficiency at 1A output. Use Value: 12ns trr prevents reverse recovery spikes that degrade EMI performance; 0.82V VSD reduces forward drop vs. 0.45V Schottky at high temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3028LSD-13 | RDS(on) = 0.028Ω @ 10V; SO-8; higher Qg (16.5nC); no specified trr | Lacks documented body diode recovery specs - unsuitable for synchronous rectification where trr < 20ns is required | Prefer ZXMN3F31DN8TA when reverse recovery performance is critical |
| SI6926ADQ-T1-GE3 | RDS(on) = 0.032Ω @ 10V; SO-8; Qg = 14.5nC; trr = 15ns (typ) | 15ns trr increases switching loss by ~25% vs. ZXMN3F31DN8TA's 12ns in 500kHz buck converters | Acceptable for load switching; avoid in high-frequency synchronous rectifiers |
Compared with DMN3028LSD-13 and SI6926ADQ-T1-GE3, ZXMN3F31DN8TA offers the lowest trr (12ns) and best RDS(on) @ 4.5V (0.039Ω), making it optimal for logic-level-driven synchronous rectification and thermally constrained dual-switch designs.
Availability
ZXMN3F31DN8TA is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and LED backlight systems requiring stable component supply and consistent SO-8 thermal performance.
Supply support for ZXMN3F31DN8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its portfolio of high-performance analog and discrete semiconductors with ISO 9001 and IATF 16949 certification.
ZXMN3F31DN8TA belongs to Zetex's TrenchMOS® family, engineered for high-efficiency power conversion in space-constrained industrial and computing applications where low gate-charge and fast switching are essential.
FAQ
What is the maximum continuous drain current for each channel at 70°C ambient?
Each channel supports 5.9A continuous drain current at TA = 70°C with VGS = 10V, based on SO-8 mounting on 25mm × 25mm FR4 PCB with 1oz copper (derating factor 10 mW/°C from 1.25W at 25°C). This assumes no thermal coupling between channels beyond the shared package.
Can ZXMN3F31DN8TA be used in a half-bridge configuration with bootstrapped high-side drive?
No - ZXMN3F31DN8TA contains only N-channel MOSFETs with source terminals isolated per channel. It lacks integrated level-shifting or P-channel devices required for self-contained half-bridge operation. It is designed for dual low-side or synchronous rectifier roles, not high-side switching.
Is the exposed drain pad electrically connected to all drain pins?
Yes - Pins 5, 6, 7, and 8 form a single exposed drain thermal pad electrically connected to both D1 and D2 terminals. This common drain structure requires careful PCB layout: the pad must be soldered to a large copper pour for thermal performance, and no isolation is possible between the two channels' drain nodes.
What is the gate threshold voltage range, and how does it affect 3.3V MCU compatibility?
VGS(th) is specified from 1.0V to 3.0V at ID = 250μA. At 3.3V gate drive, the device fully enhances well within this range, delivering RDS(on) ≤0.039Ω. This ensures reliable turn-on across temperature and process variation without requiring gate boosting circuitry.
ZXMN3F31DN8TA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 5.7A
- Rds On (Max) @ Id, Vgs:
- 24mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 608pF @ 15V
- Power - Max:
- 1.8W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
ZXMN3F31DN8TA FAQ
1.How can I place an order for ZXMN3F31DN8TA through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXMN3F31DN8TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXMN3F31DN8TA reliable?
The price and inventory of ZXMN3F31DN8TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN3F31DN8TA is usually 5 days.
3.What payment methods are accepted for ZXMN3F31DN8TA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMN3F31DN8TA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXMN3F31DN8TA?
ZXMN3F31DN8TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXMN3F31DN8TA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXMN3F31DN8TA?
For technical support, including ZXMN3F31DN8TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN3F31DN8TA requirements.
6.How does Aetrix verify that ZXMN3F31DN8TA is sourced from the original manufacturer or authorized distributors?
All ZXMN3F31DN8TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN3F31DN8TA meets industry standards.
7.What is the process for return or replacement of ZXMN3F31DN8TA?
All ZXMN3F31DN8TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN3F31DN8TA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXMN3F31DN8TA part is unused and in its original packaging.
Return procedure for ZXMN3F31DN8TA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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