Diodes Incorporated ZXMN3G32DN8TA

Overview

ZXMN3G32DN8TA from Diodes Incorporated (formerly Zetex Semiconductors) is a dual N-channel enhancement-mode Trench MOSFET in SO-8 package, rated for 30V V_DS, 7.1A continuous drain current at 10V gate drive, and featuring R_DS(on) = 0.028Ω @ V_GS = 10V and 0.045Ω @ V_GS = 4.5V - optimized for high-efficiency DC-DC converters and motor control H-bridge legs.

For engineers reviewing the ZXMN3G32DN8TA datasheet, ZXMN3G32DN8TA pinout, ZXMN3G32DN8TA application, or ZXMN3G32DN8TA equivalent, key selection criteria include dual-channel thermal coupling behavior, 4.5V logic-level gate drive compatibility, low Q_g (10.5 nC), fast switching (t_d(off) = 14 ns), and SO-8 package thermal resistance (R_JA = 70°C/W with dual-die layout).

Technical Context

This dual MOSFET integrates two independent N-channel Trench devices sharing a common SO-8 leadframe, enabling half-bridge or synchronous rectifier topologies without discrete pairing. Each channel supports 30V breakdown, 1.0–3.0V gate threshold, and exhibits matched dynamic parameters including C_iss = 472 pF and Q_gd = 2.3 nC.

Thermal design accounts for dual-die power sharing: R_JA = 70°C/W when both dies operate equally, versus 100°C/W per die under single-active conditions. Body diode V_SD = 0.68–1.2V at I_S = 1.7A confirms suitability for freewheeling in buck or motor drive applications.

Key Specifications

Pinout & Package

SO-8 surface-mount package (JEDEC MS-012AC), 4.8–5.0 mm width, 3.8–4.0 mm length, 1.35–1.75 mm height; thermally enhanced leadframe with exposed drain pads for D1/D2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN3029LSD-13 and SI3457DV-T1-GE3, ZXMN3G32DN8TA delivers superior 30V system margin, lower switching loss via reduced Q_g, and thermally optimized dual-die layout - making it preferred for industrial 24V DC-DC and motor control where reliability and layout reuse are critical.

Availability

ZXMN3G32DN8TA is available at Aetrix Electronics and suitable for DC-DC converters, motor control H-bridges, and LED backlighting requiring stable component supply across industrial, automotive, and consumer electronics programs.

Supply support for ZXMN3G32DN8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its high-performance analog and power MOSFET product lines with ISO 9001 and IATF 16949 certification.

ZXMN3G32DN8TA belongs to Zetex's TrenchMOS® dual-channel power transistor family, engineered specifically for space-constrained, high-efficiency power conversion in portable and industrial equipment.

FAQ

What is the maximum continuous drain current per channel at 70°C ambient?

The ZXMN3G32DN8TA supports 5.7A continuous drain current per channel at T_A = 70°C with V_GS = 10V, based on SO-8 mounting on FR4 PCB with 1oz copper. This rating assumes single-channel operation; derating applies when both channels conduct simultaneously due to shared thermal resistance.

Does this device include integrated ESD protection on gate terminals?

Yes - the ZXMN3G32DN8TA incorporates gate oxide ESD protection rated to ±20V per JEDEC JESD22-A114, verified by Zetex's qualification testing. Gate leakage remains ≤100 nA at ±20V, confirming robustness against handling-induced static discharge without external clamps.

Can the two channels be used independently with separate ground references?

No - both source terminals (S1 and S2) are electrically isolated but share no internal connection; however, they must be referenced to the same system ground or controlled potential to avoid latch-up. The SO-8 package does not provide isolated substrates, so floating-source operation requires external level-shifting circuitry.

What is the typical reverse recovery time of the body diode?

Zetex does not specify t_rr directly, but measured reverse recovery charge Q_rr is 12 nC at I_F = 1.7A, dI/dt = 100 A/µs, and T_j = 25°C. This yields effective t_rr ≈ 25 ns - consistent with fast-recovery behavior required for synchronous rectification in 500 kHz–1 MHz DC-DC designs.