Diodes Incorporated ZXMN4A06KTC

Overview

ZXMN4A06KTC from Zetex Semiconductors is a 40V N-channel enhancement-mode trench MOSFET in DPAK package, with R_DS(on) = 0.05 Ω @ V_GS = 10 V, I_D = 4.5 A, and fast switching (t_d(on) = 3.2 ns, t_d(off) = 23.3 ns), optimized for high-efficiency low-voltage DC-DC converters and motor control stages.

For engineers reviewing the ZXMN4A06KTC datasheet, ZXMN4A06KTC pinout, ZXMN4A06KTC application, or ZXMN4A06KTC equivalent, key selection criteria include verified R_DS(on) at 4.5 A/10 V, body diode V_SD = 0.83–0.95 V, thermal resistance R_JA = 13.2 °C/W (FR4, 50 mm × 50 mm, 2 oz Cu), and gate charge Q_g = 17.1 nC for PWM-driven power stage design.

Technical Context

This MOSFET employs a trench-gate structure to simultaneously minimize conduction loss and switching transition time. Its low V_GS(th) (1.0 V typ.) enables direct drive from 3.3 V logic, while low C_iss (827 pF) and C_rss (84 pF) support stable high-frequency operation up to 1 MHz in synchronous buck topologies.

The integrated body diode exhibits t_rr = 16 ns and Q_rr = 9 nC under defined conditions (I_F = 4 A, di/dt = 100 A/μs), enabling efficient freewheeling in half-bridge and H-bridge motor drivers without external Schottky supplementation.

Key Specifications

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal performance; standard 3-pin configuration: Drain (Pin 1), Source (Pin 2), Gate (Pin 3).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMN4033LSD-13 and IRLML6344TRPBF, ZXMN4A06KTC offers balanced trade-off between 40 V rating, 0.05 Ω on-resistance, and 17.1 nC gate charge-making it optimal for 24 V industrial DC-DC and motor drives where both voltage headroom and gate drive simplicity matter.

Availability

ZXMN4A06KTC is available at Aetrix Electronics and suitable for DC–DC converters, motor control stages, audio output stages, and relay/solenoid driving requiring stable component supply across industrial automation, embedded power, and building control systems.

Supply support for ZXMN4A06KTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Zetex Semiconductors (now part of Diodes Incorporated) specialized in high-performance analog and power semiconductors for industrial and automotive markets before its 2008 acquisition.

ZXMN4A06KTC belongs to Zetex's trench-MOSFET product line, engineered specifically for high-efficiency, low-voltage power conversion and switching in space- and thermally-constrained applications.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The ZXMN4A06KTC supports 8.7 A continuous drain current at T_A = 70°C with V_GS = 10 V, per absolute maximum ratings table. This assumes mounting on a 50 mm × 50 mm FR4 PCB with 2 oz copper and still air conditions. Derating follows linear 76 mW/°C slope above 25°C ambient.

Does this MOSFET have avalanche capability?

No. The ZXMN4A06KTC datasheet does not specify rated unclamped inductive switching (UIS) or avalanche energy (E_AS). It is not characterized or guaranteed for repetitive avalanche operation; external clamping or snubbing is required in inductive switching applications.

Can ZXMN4A06KTC be driven directly from a 3.3 V microcontroller GPIO?

Yes. With V_GS(th) = 1.0 V (typ.), the device fully enhances at 3.3 V gate drive, delivering R_DS(on) ≈ 0.075 Ω at I_D = 3.2 A. However, switching speed will be reduced versus 10 V drive due to lower transconductance and higher effective gate resistance.

What is the recommended PCB layout for thermal performance?

Use ≥50 mm × 50 mm copper pour connected to the exposed drain pad (Pin 1) with ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) to inner-layer ground planes. Maintain ≥0.5 mm clearance between gate trace and high-dv/dt nodes, and place gate resistor within 2 mm of the gate pin to suppress oscillation.