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Diodes Incorporated ZXMN6A08GQTA

Part No.:
ZXMN6A08GQTA
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixZXMN6A08GQTA.pdf
Description:
MOSFET N-CH 60V 3.8A SOT223
Quantity:
Payment:
Payment
Shipping:
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Inventory:261

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Product details

Overview

ZXMN6A08GQTA from Diodes Incorporated is a 60V, SOT223-packaged N-channel enhancement-mode MOSFET with RDS(ON) = 0.08 Ω @ VGS = 10V, 5.3A continuous drain current at TA = +25°C, and AEC-Q101 qualification. It serves as a high-reliability load switch or power stage transistor in automotive BLDC motor drives and DC-DC converters.

For engineers reviewing the ZXMN6A08GQTA datasheet, ZXMN6A08GQTA pinout, ZXMN6A08GQTA application, or ZXMN6A08GQTA equivalent, key selection criteria include its 0.08Ω on-resistance at 10V gate drive, 12.3ns turn-off delay, AEC-Q101 qualification, thermal resistance of 32°C/W (on FR-4), and SOT223 package compatibility with high-current PCB layouts.

Technical Context

This MOSFET employs planar silicon technology optimized for low gate charge (QG = 5.8 nC @ 10V) and fast switching (tD(OFF) = 12.3 ns), enabling efficient operation in 200–500 kHz DC-DC topologies. Its 1V gate threshold (VGS(TH) min = 1V) supports direct interface with 3.3V and 5V logic controllers without level shifting.

The device integrates a robust body diode with tRR = 19.2 ns and QRR = 30.3 nC, suitable for synchronous rectification and freewheeling in half-bridge configurations. Thermal design is supported by two distinct RθJA ratings: 32°C/W (high-copper PCB) and 62.5°C/W (standard FR-4), reflecting real-world layout dependencies.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60 V - Maximum blocking voltage for 12V/24V automotive bus systems with transient margin
RDS(ON) 0.08 Ω @ VGS = 10V - Enables ≤0.43 W conduction loss at 5.3A, reducing heatsink requirements
ID (continuous) 5.3 A @ TA = +25°C - Supports sustained load switching in engine control modules and ADAS power rails
QG 5.8 nC @ VGS = 10V - Low gate drive power demand for microcontroller-based PWM control
tD(OFF) 12.3 ns - Enables clean dead-time management in half-bridge inverters up to 500 kHz
RθJA 32 °C/W - Achievable with 25 mm × 25 mm 1 oz copper pad; defines minimum PCB copper area for thermal compliance
VGS(TH) 1–2.5 V - Ensures reliable turn-on with standard 3.3V GPIOs and avoids false triggering near ground noise

Pinout & Package

Package: SOT223 (Type DN), surface-mount, thermally enhanced plastic package with exposed drain tab for PCB heat sinking. Molded plastic meets UL 94V-0 flammability rating; moisture sensitivity level 1 per J-STD-020.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Source) Source terminal (body diode cathode) Primary current return path; tied to ground plane or low-side reference in high-side switch configurations
Pin 2 (Gate) Control input High-impedance node requiring <1.4 nC gate charge for full turn-on; sensitive to ESD and ringing
Pin 3 (Drain) Power output / high-side connection Internally connected to large metal tab; must be soldered to ≥25 mm² copper pour for thermal performance
Tab (Drain) Drain terminal (thermal & electrical) Electrically and thermally identical to Pin 3; mandatory thermal connection to PCB for RθJA = 32°C/W

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive use with PPAP support and IATF 16949 manufacturing-enables direct integration into Tier-1 ECUs
Low RDS(ON) @ 4.5V 0.15 Ω - Maintains <1.8 W loss at 3.5A with 5V logic-level drive, eliminating need for gate drivers in many applications
Fast switching with low QGD QGD = 1.9 nC - Minimizes Miller plateau duration, improving immunity to dV/dt-induced shoot-through
Green, RoHS-compliant construction Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); compliant with EU RoHS 2015/863/EU
Body diode with low QRR QRR = 30.3 nC - Reduces reverse recovery losses in synchronous buck and flyback converters

Applications

BLDC Motor Gate Driver Stage Automotive DC-DC Converter Primary Switch

Use Scenario: High-side switching in 3-phase inverter for 12V HVAC blower motors.

IC Role / Device Role / Timing Role: Power switch in half-bridge leg; commutated at 20 kHz with 12.3 ns tD(OFF) enabling precise timing control.

Use Value: 0.08 Ω RDS(ON) limits conduction loss to 2.2 W at 4.7A RMS, reducing thermal stress in confined under-hood space.

Use Scenario: Primary-side switch in 12V-to-5V synchronous buck converter for infotainment power supply.

IC Role / Device Role / Timing Role: Main power FET operating at 350 kHz; driven by PWM controller with 5.8 nC total gate charge.

Use Value: Low QG and QGD reduce driver power consumption and improve efficiency by 1.2% over comparable 0.12 Ω devices.

Engine Control Unit Load Switch ADAS Camera Power Sequencer

Use Scenario: Controlled 12V power delivery to fuel injector drivers and solenoid valves.

IC Role / Device Role / Timing Role: High-side load switch with integrated protection; enabled via MCU GPIO with 1V VGS(TH).

Use Value: AEC-Q101 qualification and -55°C to +150°C operation ensure reliability across engine start-stop cycles and thermal soak conditions.

Use Scenario: Sequenced 3.3V/1.8V rail enable for multi-sensor camera module in rear-view systems.

IC Role / Device Role / Timing Role: Low-noise, low-leakage power switch; IDSS ≤ 0.5 µA prevents standby current accumulation.

Use Value: 0.5 µA max IDSS and 100 nA IGSS meet ISO 16750-2 quiescent current requirements for always-on vehicle domains.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN601DWKQ-7 RDS(ON) = 0.12 Ω @ 10V; SOT223-3L; QG = 7.2 nC Higher conduction loss; less suitable for high-current BLDC phases Prefer where cost sensitivity outweighs efficiency; verify thermal margin with RθJA = 40°C/W
IPD25N06S4-1R2 TO-252 package; RDS(ON) = 1.2 mΩ; QG = 32 nC; higher current (25A) Requires larger footprint and gate driver due to 32 nC QG; over-specified for <6A loads Select only when >10A peak current or lower RDS(ON) is mandatory; not drop-in compatible

Compared with DMN601DWKQ-7 and IPD25N06S4-1R2, ZXMN6A08GQTA delivers optimal balance of low gate charge (5.8 nC), moderate RDS(ON) (0.08 Ω), and AEC-Q101 compliance in compact SOT223-making it ideal for space-constrained, thermally demanding automotive power stages below 6A.

Availability

ZXMN6A08GQTA is available at Aetrix Electronics and suitable for automotive BLDC motor control, DC-DC conversion, and ECU load switching requiring stable component supply and AEC-Q101 traceability.

Supply support for ZXMN6A08GQTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

ZXMN6A08GQTA belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for under-hood and safety-critical power switching in 12V/24V vehicle systems with stringent PPAP and thermal reliability requirements.

FAQ

Is ZXMN6A08GQTA suitable for high-frequency switching above 1 MHz?

No. While its tD(OFF) is 12.3 ns, the device's Ciss = 459 pF and QG = 5.8 nC result in practical switching limits around 500 kHz in hard-switched topologies. Above this frequency, switching losses dominate, and thermal derating becomes severe-even with optimized gate drive and PCB copper.

Can ZXMN6A08GQTA be used in a high-side configuration with bootstrap gate drive?

Yes. Its VGSS = ±20 V and VGS(TH) = 1–2.5 V make it compatible with standard bootstrap circuits driving 10–12 V gate voltage. However, the SOT223 drain-tab thermal path requires careful PCB layout to avoid localized heating during continuous high-side operation.

What is the maximum safe operating current at 105°C ambient temperature?

At TA = +105°C, the device's linear derating factor is 31 mW/°C (PD = 3.9 W at 25°C). With RDS(ON) ≈ 0.11 Ω at 105°C junction, the maximum continuous current is approximately 2.3 A-verified using PLOSS = I² × RDS(ON) ≤ (3.9 W − (105−25) × 0.031 W) = 1.42 W.

Does the SOT223 package support reflow soldering per J-STD-020?

Yes. The device is rated Moisture Sensitivity Level 1 (MSL-1), meaning it may be stored indefinitely at ≤30°C/60% RH and subjected to standard Pb-free reflow profiles (peak 260°C, 20–40 sec above 217°C) without baking or special handling.

ZXMN6A08GQTA Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
80mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
5.8 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
459 pF @ 40 V
FET Feature:
-
Power Dissipation (Max):
2W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223-3

ZXMN6A08GQTA FAQ

1.How can I place an order for ZXMN6A08GQTA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMN6A08GQTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMN6A08GQTA reliable?

The price and inventory of ZXMN6A08GQTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN6A08GQTA is usually 5 days.

3.What payment methods are accepted for ZXMN6A08GQTA?

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ZXMN6A08GQTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMN6A08GQTA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMN6A08GQTA?

For technical support, including ZXMN6A08GQTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN6A08GQTA requirements.

6.How does Aetrix verify that ZXMN6A08GQTA is sourced from the original manufacturer or authorized distributors?

All ZXMN6A08GQTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN6A08GQTA meets industry standards.

7.What is the process for return or replacement of ZXMN6A08GQTA?

All ZXMN6A08GQTA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN6A08GQTA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMN6A08GQTA part is unused and in its original packaging.

Return procedure for ZXMN6A08GQTA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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