Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZXMN6A08GQTC

Name: ZXMN6A08GQTC
Brand: Diodes Incorporated
SKU: ZXMN6A08GQTC
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: ZXMN6A08GQTC

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: ZXMN6A08GQTC.pdf

Description:: MOSFET N-CH 60V 3.8A SOT223

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,766

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

ZXMN6A08GQTC from Diodes Incorporated is a 60V, SOT223-packaged N-channel enhancement-mode MOSFET with R_DS(ON) = 0.08 Ω @ V_GS = 10V, I_D = 5.3A (T_A = +25°C), and AEC-Q101 qualification for automotive use in BLDC motor control, DC-DC converters, and load switching circuits.

For engineers reviewing the ZXMN6A08GQTC datasheet, ZXMN6A08GQTC pinout, ZXMN6A08GQTC application, or ZXMN6A08GQTC equivalent, key selection criteria include its low-threshold gate drive (V_GS(TH) = 1V min), fast switching (t_F = 4.6 ns), and thermal performance (R_θJA = 32 °C/W on 1oz copper).

Technical Context

This MOSFET operates as a unidirectional power switch in high-reliability automotive subsystems, supporting continuous drain current up to 4.2A at T_A = +70°C and pulsed current up to 20A. Its body diode exhibits t_RR = 19.2 ns and Q_RR = 30.3 nC, enabling efficient synchronous rectification in buck converters.

The device features low gate charge (Q_G = 5.8 nC @ V_GS = 10V) and optimized capacitance profile (C_iss = 459 pF, C_rss = 24.1 pF), reducing drive loss and improving EMI behavior in high-frequency switching applications up to 500 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche conduction; suitable for 48V automotive bus and industrial 24–48V systems.
R_DS(ON)	0.08 Ω @ V_GS = 10V - Enables <1.5W conduction loss at 4.3A, critical for thermally constrained SOT223 layouts.
I_D (continuous)	5.3 A @ T_A = +25°C - Rated for sustained load-switching duty in ambient-cooled PCB designs.
V_GS(TH)	1 V min - Allows direct interface with 3.3V/5V logic-level controllers without level-shifting circuitry.
t_F	4.6 ns - Supports fast turn-off in high-efficiency SMPS, minimizing overlap loss during dead-time transitions.
Q_G	5.8 nC @ V_GS = 10V - Reduces gate driver power demand and enables use of low-current drivers (e.g., TC4427).
R_θJA	32 °C/W - Measured on 25 mm × 25 mm FR-4 with 1oz copper; defines thermal derating slope for system-level thermal design.

Pinout & Package

Package: SOT223 (Type DN), surface-mount, 4-terminal configuration with drain-connected tab for enhanced thermal dissipation. Molded plastic body, UL 94V-0 rated, matte tin terminals.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to ground or low-side return path in half-bridge topologies.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <5.8 nC total charge for full enhancement; sensitive to ESD.
Pin 3 (Drain)	Power output	Main current-carrying terminal; internally connected to exposed metal tab for thermal conduction to PCB copper.
Tab (Drain)	Drain thermal pad	Electrically and thermally tied to Pin 3; must be soldered to ≥25 mm² copper pour for R_θJA = 32 °C/W performance.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive temperature range (−55°C to +150°C) and vibration/stress requirements per PPAP process.
Low R_DS(ON) @ 4.5V	0.15 Ω - Ensures usable on-resistance with 5V microcontroller GPIO or automotive 5V supply rails.
Fast switching with low Q_GD	Q_GD = 1.9 nC - Minimizes Miller plateau duration, improving immunity to dv/dt-induced false turn-on.
Green, RoHS-compliant	Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); compliant with EU RoHS 3 Directive 2015/863/EU.

Applications

BLDC Motor Gate Driver

Automotive DC-DC Converter

Use Scenario: Low-voltage (12–48V) brushless motor phase-leg switching in EPS, HVAC blower, or seat actuator modules.

IC Role / Device Role / Timing Role: High-side or low-side power switch in 3-phase inverter stage; commutated at 10–20 kHz.

Use Value: Low R_DS(ON) and fast t_F reduce conduction and switching losses, extending battery runtime and limiting MOSFET junction temperature rise.

Use Scenario: Synchronous rectifier in 48V-to-12V buck converter for ADAS camera or infotainment power rail.

IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diode; driven complementary to primary FET.

Use Value: Body diode t_RR = 19.2 ns and low Q_RR minimize reverse recovery loss, increasing efficiency by >2% vs. discrete diode solution.

Automotive Load Switch

Industrial Power Sequencing

Use Scenario: Controlled power delivery to ECUs, sensors, or lighting modules with inrush current limiting and fault protection.

IC Role / Device Role / Timing Role: Single-N-channel high-side switch with external gate resistor and optional current-sense feedback.

Use Value: V_GS(TH) = 1V min allows direct drive from MCU GPIO; low gate charge enables fast enable/disable response (<10 µs).

Use Scenario: Power-up sequencing in multi-rail industrial PLC I/O modules where 24V auxiliary rail must activate before 5V logic rail.

IC Role / Device Role / Timing Role: Standalone power switch controlled by FPGA or sequencer IC; operated in linear mode for soft-start ramping.

Use Value: R_DS(ON) stability over temperature (±15% from −40°C to +125°C) ensures predictable inrush limiting across operating range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN601DWKQ-7	R_DS(ON) = 0.075 Ω @ 10V but SOT-26 package (smaller footprint, higher R_θJA = 90 °C/W); no AEC-Q101 certification.	Limited to non-automotive industrial use due to lack of PPAP support and automotive qualification.	Select when board space is constrained and automotive compliance is not required.
IPD70N06S4-05	TO-252 package, R_DS(ON) = 0.005 Ω @ 10V, I_D = 70A - significantly higher current rating and lower on-resistance but larger size and cost.	Suitable for high-power inverters (>1 kW); over-specified for SOT223-targeted 5A-class loads.	Choose only if thermal budget exceeds 3.9W or peak current exceeds 20A pulses.

Compared with DMN601DWKQ-7 and IPD70N06S4-05, ZXMN6A08GQTC uniquely balances AEC-Q101 compliance, SOT223 thermal capability (3.9W PD), and logic-level gate drive in a single-source automotive-qualified part-making it optimal for cost-sensitive, space-constrained 5A automotive power stages.

Availability

ZXMN6A08GQTC is available at Aetrix Electronics and suitable for BLDC motor control, automotive DC-DC conversion, and load switching applications requiring stable component supply, long-term automotive-grade availability, and traceable sourcing.

Supply support for ZXMN6A08GQTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with ISO/TS 16949-certified manufacturing facilities and broad distribution networks.

ZXMN6A08GQTC belongs to Diodes' automotive-qualified PowerMOS family, engineered specifically for high-reliability 12V/48V vehicle subsystems where AEC-Q101 validation, low gate threshold, and robust thermal performance are mandatory.

FAQ

Is ZXMN6A08GQTC suitable for high-side switching configurations?

Yes - its 60V V_DSS and 1V minimum V_GS(TH) support high-side operation with bootstrap gate drive. The SOT223 drain-tab connection simplifies thermal management in high-side layouts, and its low Q_GD (1.9 nC) reduces risk of shoot-through during commutation. External gate resistor selection must ensure adequate turn-off speed under worst-case dv/dt conditions.

What is the maximum safe operating temperature for continuous use?

The absolute maximum junction temperature is +150°C, and the device is rated for continuous operation across −55°C to +150°C. For reliable long-term use at full 5.3A drain current, PCB layout must maintain R_θJA ≤ 32 °C/W (per datasheet Note 5), limiting ambient temperature to ≤ +118°C when P_D = 3.9W. Derating is required above T_A = +70°C.

Does ZXMN6A08GQTC require a gate resistor for ESD protection?

No - the device incorporates internal gate protection diodes per AEC-Q101 stress testing requirements. However, an external series gate resistor (10–100 Ω) is recommended to dampen ringing, limit peak gate current during fast switching, and reduce EMI. Values below 5 Ω increase risk of gate oscillation; values above 220 Ω degrade switching speed unnecessarily.

Can ZXMN6A08GQTC replace older ZXMN6A07 models in existing designs?

Yes - ZXMN6A08GQTC is a direct replacement for ZXMN6A07 with identical SOT223 pinout, same AEC-Q101 qualification, and improved R_DS(ON) (0.08 Ω vs. 0.095 Ω @ 10V). No layout or gate drive changes are needed; the lower on-resistance yields ~16% reduction in conduction loss at 4.8A, improving thermal margin in legacy automotive modules.

ZXMN6A08GQTC Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 3.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 4.8A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 5.8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 459 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223-3

ZXMN6A08GQTC FAQ

1.How can I place an order for ZXMN6A08GQTC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMN6A08GQTC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMN6A08GQTC reliable?

The price and inventory of ZXMN6A08GQTC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN6A08GQTC is usually 5 days.

3.What payment methods are accepted for ZXMN6A08GQTC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMN6A08GQTC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMN6A08GQTC?

ZXMN6A08GQTC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMN6A08GQTC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMN6A08GQTC?

For technical support, including ZXMN6A08GQTC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN6A08GQTC requirements.

6.How does Aetrix verify that ZXMN6A08GQTC is sourced from the original manufacturer or authorized distributors?

All ZXMN6A08GQTC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN6A08GQTC meets industry standards.

7.What is the process for return or replacement of ZXMN6A08GQTC?

All ZXMN6A08GQTC units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN6A08GQTC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMN6A08GQTC part is unused and in its original packaging.

Return procedure for ZXMN6A08GQTC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…