Diodes Incorporated ZXMN6A08KTC

Overview

ZXMN6A08KTC from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in TO-252 (DPAK) package, rated for 7.90A continuous drain current at V_GS = 10V, with R_DS(on) = 80 mΩ and fast switching (t_D(off) = 12.3 ns). It integrates a low-V_SD body diode (0.88 V @ 4.0 A) and supports high-efficiency DC-DC converters and LED backlighting.

For engineers reviewing the ZXMN6A08KTC datasheet, ZXMN6A08KTC pinout, ZXMN6A08KTC application, or ZXMN6A08KTC equivalent, key selection criteria include its 60V V_BRDSS, 80 mΩ R_DS(on) at 10V drive, thermal resistance of 30.3 °C/W on 50 mm × 50 mm PCB, and RoHS-compliant "Green" packaging.

Technical Context

This MOSFET employs planar silicon technology optimized for low conduction loss and controlled gate charge (Q_g = 5.8 nC @ 10V), enabling efficient operation in synchronous buck topologies. Its 19.2 ns reverse recovery time and 30.3 nC Q_rr support moderate-frequency switching up to ~500 kHz without excessive diode losses.

The device features a gate threshold voltage range of 1.0–3.0 V, ensuring reliable turn-on with standard 3.3 V or 5 V logic-level drivers. Thermal design is supported by validated R_θJA values for both 50 mm × 50 mm (2 oz Cu) and 25 mm × 25 mm (1 oz Cu) PCB layouts, with junction-to-lead resistance of 2.77 °C/W.

Key Specifications

Pinout & Package

Package: TO-252 (DPAK), surface-mount, molded plastic case with matte tin-plated copper leadframe; UL 94V-0 rated, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMN601WK-7 and IPD250N06N3G, ZXMN6A08KTC delivers optimal balance of low R_DS(on), manageable Q_g, and industry-standard DPAK footprint-making it ideal for space-constrained, mid-power DC-DC and backlighting designs where thermal headroom is limited.

Availability

ZXMN6A08KTC is available at Aetrix Electronics and suitable for LED backlighting, DC-DC converters, and power management functions requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant manufacturing.

Supply support for ZXMN6A08KTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and Europe, serving automotive, industrial, and consumer markets.

The ZXMN6A08KTC belongs to Diodes' ZXMN series of low-voltage N-channel MOSFETs, engineered specifically for high-efficiency, medium-current power conversion in space-constrained applications such as portable electronics and display subsystems.

FAQ

What is the maximum safe operating temperature for ZXMN6A08KTC?

The ZXMN6A08KTC has a specified junction temperature range of –55°C to +150°C. For reliable long-term operation, the junction temperature should be kept below 130°C under steady-state conditions. This requires proper PCB copper area (e.g., 50 mm × 50 mm, 2 oz Cu) to maintain R_θJA ≤ 30.3 °C/W and limit self-heating under 7.9 A load.

Can ZXMN6A08KTC be driven directly by a 3.3 V microcontroller GPIO?

Yes-its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 3.0 V, and it delivers R_DS(on) = 150 mΩ at V_GS = 4.5 V. While full enhancement occurs at 10 V, usable conduction begins at 3.3 V, making it suitable for logic-level drive in low-duty-cycle or low-current applications, though efficiency will be reduced versus 10 V drive.

Does ZXMN6A08KTC include an integrated body diode, and what are its characteristics?

Yes-it features a monolithic body diode with forward voltage V_SD = 0.88 V at 4.0 A and reverse recovery time t_rr = 19.2 ns. This diode supports freewheeling in non-synchronous converters and enables bidirectional current flow during transient events, but is not rated for continuous reverse conduction beyond its 9.0 A I_S limit.

What is the recommended PCB pad layout for thermal performance?

Diodes recommends a minimum 5.8 mm × 6.2 mm copper pour (≈50 mm²) connected to the drain pad via ≥4 thermal vias (0.3 mm diameter, filled or plated) to inner ground/power planes. The datasheet specifies a 5.8 mm × 6.2 mm outline with 3.0 mm wide solder mask opening to maximize thermal transfer while maintaining solder joint reliability.