My Inquiry
My Account
Diodes Incorporated ZXMN6A09DN8TA
- Part No.:
- ZXMN6A09DN8TA
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
ZXMN6A09DN8TA.pdf
- Description:
- MOSFET 2N-CH 60V 4.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7,942
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
ZXMN6A09DN8TA from Zetex Semiconductors is a 60V, 5.6A N-channel enhancement-mode trench MOSFET in SOIC-8 package, featuring 40 mΩ RDS(on) at VGS = 10 V and 60 mΩ at 4.5 V, fast 4.9 ns turn-on delay, and integrated body diode with 0.85–0.95 V forward voltage-designed for high-efficiency DC-DC converters and power management switches.
For engineers reviewing the ZXMN6A09DN8TA datasheet, ZXMN6A09DN8TA pinout, ZXMN6A09DN8TA application, or ZXMN6A09DN8TA equivalent, key selection criteria include low gate charge (12.4 nC at VGS = 5 V), thermal resistance (60 °C/W junction-to-ambient on FR4), and dual-die SO8 layout enabling compact dual-switch configurations in space-constrained power rails.
Technical Context
This MOSFET employs a proprietary trench-gate structure to simultaneously minimize conduction loss and switching loss. Its 1407 pF input capacitance and 59 pF reverse transfer capacitance support stable gate drive under high-frequency PWM operation up to several hundred kHz.
The device integrates two independent N-channel die in a single SOIC-8 package with split source/drain terminals (D1/S1/G1 and D2/S2/G2), enabling synchronous rectification or half-bridge topologies without external paralleling. Body diode recovery time is specified at 26.3 ns with 26.6 nC Qrr, supporting efficient discontinuous conduction mode operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - supports 48 V nominal bus systems with 20 % margin against transients |
| RDS(on) | 40 mΩ @ VGS = 10 V - limits I²R loss to ≤1.25 W at 5.6 A continuous drain current |
| Qg | 12.4 nC @ VGS = 5 V - enables efficient 500 kHz switching with <1 W gate driver power dissipation |
| td(on) | 4.9 ns - ensures precise timing control in synchronous buck controllers with tight dead-time requirements |
| RJA | 60 °C/W - allows 1.8 W power dissipation at Tamb = 25 °C on standard FR4 PCB |
| VGS(th) | 1.0–3.0 V - compatible with 3.3 V and 5 V logic-level gate drivers without level shifting |
| VSD | 0.85–0.95 V - reduces body-diode conduction loss during shoot-through or freewheeling phases |
Pinout & Package
SOIC-8 surface-mount package with dual-die configuration: two independent N-channel MOSFETs sharing common package footprint. Dimensions per JEDEC MS-012: 4.9–5.0 mm width, 3.8–4.0 mm length, 1.27 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Device 1 | High-side switch node for first MOSFET; electrically isolated from D2 |
| S1 | Source of Device 1 | Return path for Device 1; tied to internal substrate but not shared with S2 |
| G1 | Gate of Device 1 | Independent control input; requires separate gate resistor for optimal EMI performance |
| D2 | Drain of Device 2 | Second switch node; enables dual-phase or complementary switching in same footprint |
| S2 | Source of Device 2 | Independent return for Device 2; allows floating-source configurations (e.g., high-side switch) |
| G2 | Gate of Device 2 | Separate gate drive path; supports asymmetric duty cycle control between devices |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5 V | 60 mΩ enables direct drive from 5 V microcontrollers without gate boosters |
| Dual-die SOIC-8 integration | Reduces board area by ~40 % vs. two discrete SO8 MOSFETs in half-bridge layout |
| Fast switching with low Qgd | 3.5 nC gate-drain charge minimizes Miller-induced shoot-through risk in hard-switched topologies |
| Controlled body diode recovery | 26.3 ns trr and soft 26.6 nC Qrr reduce voltage overshoot and EMI in flyback/freewheeling paths |
Applications
| DC-DC Buck Converter | Hot-Swap Power Controller |
|---|---|
Use Scenario: 12 V input to 3.3 V/5 V point-of-load regulation in telecom line cards. IC Role / Device Role / Timing Role: High-side synchronous rectifier in 300–500 kHz buck stage, driven by integrated controller. Use Value: 40 mΩ RDS(on) cuts conduction loss by 35 % versus comparable 60 V MOSFETs, improving full-load efficiency to >92 %. | Use Scenario: Inrush current limiting and fault isolation for 48 V backplane slots. IC Role / Device Role / Timing Role: Low-side disconnect switch with controlled turn-on slew rate via gate resistor tuning. Use Value: Dual-die layout allows one device to handle main load while second monitors current via sense-FET configuration. |
| Motor Driver Half-Bridge | Battery Protection Circuit |
Use Scenario: 24 V brushed DC motor control in industrial actuators with PWM speeds up to 20 kHz. IC Role / Device Role / Timing Role: Paired high- and low-side switches in H-bridge leg, leveraging matched RDS(on) and timing characteristics. Use Value: Matched 4.9 ns td(on) and 25.3 ns td(off) across both dies enable <100 ns dead-time setting without cross-conduction. | Use Scenario: Overcurrent and short-circuit protection in Li-ion battery packs (1–4 series). IC Role / Device Role / Timing Role: Primary discharge path switch with fast 27 A pulsed current capability for fault shutdown. Use Value: 27 A IDM rating supports 10× overcurrent trip with sub-100 ns response when paired with dedicated protection IC. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel dual-MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | 60 V, 5.8 A, 42 mΩ @ 10 V; single-die SO8 with shared source; no dual independent drains | Lacks true dual-switch independence - unsuitable for half-bridge or isolated-source topologies | Select only for single-switch, high-current applications where board space is less constrained than functional isolation |
| IPG20N06S4L-12 | 60 V, 20 A, 12 mΩ @ 10 V; TO-252 package; higher gate charge (24 nC) and slower switching | Higher current capacity but larger footprint and inferior high-frequency efficiency due to 25.3 ns td(off) vs. 25.3 ns (same value but higher Ciss) | Prefer for high-current linear regulation or low-frequency switching where thermal mass outweighs switching loss concerns |
Compared with Si7852DP-T1-GE3 and IPG20N06S4L-12, ZXMN6A09DN8TA uniquely delivers dual independent MOSFETs in SO8 with matched timing and low-voltage drive capability-making it optimal for compact, high-frequency, multi-rail power architectures requiring layout symmetry and gate-drive simplicity.
Availability
ZXMN6A09DN8TA is available at Aetrix Electronics and suitable for DC-DC converters, hot-swap controllers, and motor driver half-bridges requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle availability.
Supply support for ZXMN6A09DN8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Zetex Semiconductors plc was a UK-based ISO 9001 and TS16949-certified designer of high-performance analog and power semiconductors, acquired by Diodes Incorporated in 2008.
The ZXMN series targets high-efficiency, low-voltage power management with trench-MOSFET technology optimized for fast switching, low gate drive, and thermally robust SOIC packaging in industrial and telecom applications.
FAQ
What is the maximum continuous drain current for ZXMN6A09DN8TA at 70°C ambient?
The maximum continuous drain current is 4.5 A at Tamb = 70°C with VGS = 10 V, based on thermal derating from the 5.6 A rating at 25°C using a 10 mW/°C linear factor on a 25 mm × 25 mm FR4 PCB with 1 oz copper. This reflects real-world thermal constraints in enclosed enclosures without forced airflow.
Can ZXMN6A09DN8TA be used in a synchronous rectifier configuration?
Yes - its low 40 mΩ RDS(on) at 10 V and fast 4.6 ns fall time make it suitable for synchronous rectification in buck or flyback converters up to 500 kHz. The dual-die layout allows one device to serve as primary switch and the other as synchronous rectifier, eliminating need for external diodes and reducing conduction loss by >40 %.
Is the body diode in ZXMN6A09DN8TA rated for continuous conduction?
The body diode supports continuous source current up to 3.5 A at Tamb = 25°C, with 0.85–0.95 V forward voltage at 6.6 A. It is designed for freewheeling and recovery in PWM applications-not for sustained DC conduction. For continuous diode operation, external Schottky or SiC diodes are recommended to avoid thermal runaway.
Does ZXMN6A09DN8TA require gate resistors for EMI control?
Yes - due to its 4.9 ns turn-on delay and 5.0 ns rise time, uncontrolled gate drive can cause excessive dv/dt and ringing. A 6.0 Ω series gate resistor (as used in the datasheet test circuit) is recommended to limit peak current, damp oscillation, and ensure clean switching edges in 48 V bus applications without compromising efficiency.
ZXMN6A09DN8TA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 4.3A
- Rds On (Max) @ Id, Vgs:
- 40mOhm @ 8.2A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 24.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1407pF @ 40V
- Power - Max:
- 1.25W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
ZXMN6A09DN8TA FAQ
1.How can I place an order for ZXMN6A09DN8TA through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXMN6A09DN8TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXMN6A09DN8TA reliable?
The price and inventory of ZXMN6A09DN8TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN6A09DN8TA is usually 5 days.
3.What payment methods are accepted for ZXMN6A09DN8TA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMN6A09DN8TA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXMN6A09DN8TA?
ZXMN6A09DN8TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXMN6A09DN8TA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXMN6A09DN8TA?
For technical support, including ZXMN6A09DN8TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN6A09DN8TA requirements.
6.How does Aetrix verify that ZXMN6A09DN8TA is sourced from the original manufacturer or authorized distributors?
All ZXMN6A09DN8TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN6A09DN8TA meets industry standards.
7.What is the process for return or replacement of ZXMN6A09DN8TA?
All ZXMN6A09DN8TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN6A09DN8TA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXMN6A09DN8TA part is unused and in its original packaging.
Return procedure for ZXMN6A09DN8TA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ZXMN6A09DN8TA Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
