Diodes Incorporated ZXMN6A11GTC

Overview

ZXMN6A11G from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in SOT223 package, featuring R_DS(on) = 120 mΩ @ V_GS = 10 V and 180 mΩ @ V_GS = 4.5 V, rated for 4.4 A continuous drain current at T_A = +70°C, and optimized for DC-DC converters and power management disconnect switches.

For engineers reviewing the ZXMN6A11G datasheet, ZXMN6A11G pinout, ZXMN6A11G application, or ZXMN6A11G equivalent, this device is selected for medium-voltage, moderate-current switching where low gate charge (Q_g = 5.7 nC), fast turn-off (t_D(off) = 8.2 ns), and body diode recovery (t_rr = 21.5 ns) are critical to efficiency in compact power stages.

Technical Context

This MOSFET operates as a unidirectional high-side or low-side switch in non-synchronous buck, load-switch, and motor drive topologies. Its 60 V V_DS rating supports 48 V system rails and transient margin, while its 1.0–3.0 V gate threshold enables compatibility with 3.3 V and 5 V logic-level drivers.

The device integrates a robust intrinsic body diode (V_SD = 0.85–0.95 V @ I_S = 2.8 A) with controlled reverse recovery (Q_rr = 20.5 nC), supporting freewheeling in inductive loads without external Schottky supplementation in many mid-frequency (<500 kHz) applications.

Key Specifications

Pinout & Package

Package: SOT223 (Type DN), surface-mount, 4-terminal configuration with exposed drain pad for thermal dissipation. Molded green compound, RoHS-compliant, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMN601DWK-7 and IPB070N15N3 G, ZXMN6A11G delivers optimal balance of 60 V rating, 4.4 A capability, and SOT223 thermal performance-making it the preferred choice for cost-sensitive, space-constrained 24–48 V power stages where 2–4 A load currents dominate.

Availability

ZXMN6A11G is available at Aetrix Electronics and suitable for DC-DC converters, power management functions, and motor control applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for ZXMN6A11G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

ZXMN6A11G belongs to Diodes' ZXMN series of logic-level N-channel MOSFETs, designed specifically for efficient, compact, and cost-effective power switching in 24–48 V embedded systems where thermal performance and gate drive simplicity are prioritized.

FAQ

What is the maximum continuous drain current at 100°C ambient?

At T_A = 100°C, derated from the 2.0 W P_D rating and 62.5 °C/W R_θJA, the maximum continuous drain current is approximately 1.9 A - calculated using I_D = √(P_D / R_DS(on)) = √(2.0 / 0.12) ≈ 4.1 A at 25°C, then linearly reduced by thermal derating factor of 16 mW/°C above 25°C.

Is ZXMN6A11G suitable for use in automotive applications?

ZXMN6A11G is not AEC-Q101 qualified; Diodes offers automotive-grade equivalents (e.g., ZXMN6A11GQ) with PPAP documentation, IATF 16949 manufacturing, and extended temperature validation. This standard part is intended for industrial and commercial applications only.

Does the SOT223 package require thermal vias under the drain pad?

Yes - the exposed drain pad must be soldered to a minimum 25 mm² copper area on the PCB, with ≥4 thermal vias (0.3 mm diameter, filled or plated) connecting to inner or back-side ground planes to achieve the specified R_θJA = 62.5 °C/W and sustain 2.0 W power dissipation.

Can ZXMN6A11G be used in a synchronous rectifier configuration?

No - ZXMN6A11G lacks dedicated synchronous rectification control features (e.g., adaptive dead-time, reverse conduction detection). Its body diode is optimized for freewheeling, not bidirectional conduction; use only as a unidirectional switch or low-side freewheeling element in non-synchronous topologies.