Diodes Incorporated ZXMN6A25DN8TA

Overview

ZXMN6A25DN8TA from Zetex Semiconductors is a dual N-channel enhancement-mode MOSFET in SO8 package, rated for 60 V V_DS, 5 A continuous drain current at 10 V gate drive, and 50 mΩ R_DS(on) at V_GS = 10 V. It delivers low-loss power switching in compact DC-DC converters and motor control stages where fast turn-on/turn-off and low gate charge are critical.

For engineers reviewing the ZXMN6A25DN8TA datasheet, ZXMN6A25DN8TA pinout, ZXMN6A25DN8TA application, or ZXMN6A25DN8TA equivalent, key selection criteria include dual-die thermal coupling behavior, 20.4 nC total gate charge at 10 V, body diode reverse recovery time of 22 ns, and SO8 footprint compatibility with high-density PCB layouts.

Technical Context

This dual MOSFET integrates two independent 60 V N-channel trench devices sharing a common SO8 thermally enhanced leadframe. Each die supports 5 A continuous drain current at 25°C ambient with 100 °C/W junction-to-ambient thermal resistance under standard mounting conditions.

Its dynamic performance is defined by 3.8 ns turn-on delay, 10.6 ns fall time, and 11.0 nC gate charge at 5 V drive-enabling efficient operation in synchronous buck topologies operating above 500 kHz with minimal switching loss.

Key Specifications

Pinout & Package

Package: SO8 (Small Outline 8-pin), surface-mount, 5.0 mm × 4.0 mm body, 1.27 mm pitch, 1.75 mm max height per JEDEC MS-012.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN601DWK-7 and SI6926ADQ-T1-GE3, ZXMN6A25DN8TA offers optimal balance of low 50 mΩ R_DS(on), 20.4 nC gate charge, and true dual-channel isolation-making it preferred for space-constrained synchronous buck and H-bridge designs requiring matched thermal behavior.

Availability

ZXMN6A25DN8TA is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and power management functions requiring stable component supply and SO8 footprint consistency across production batches.

Supply support for ZXMN6A25DN8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Zetex Semiconductors plc was a UK-based ISO 9001 and TS16949 certified designer and manufacturer of high-performance analog and power semiconductors before its acquisition by Diodes Incorporated in 2008.

ZXMN6A25DN8TA belongs to Zetex's trench-MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in space-constrained industrial and computing applications.

FAQ

What is the maximum continuous drain current per channel at 70°C ambient?

The ZXMN6A25DN8TA supports 4 A continuous drain current per channel at T_amb = 70°C with V_GS = 10 V, based on derating from the 5 A rating at 25°C using the 14 mW/°C linear derating factor for dual-die operation. This reflects real thermal coupling between channels on the shared SO8 leadframe.

Does the device integrate back-to-back MOSFETs for bidirectional blocking?

No. ZXMN6A25DN8TA contains two independent N-channel enhancement-mode MOSFETs with separate D/S/G terminals. There is no internal series or anti-parallel connection-each channel operates unidirectionally with forward conduction from drain to source when gated.

Can the body diodes be used for synchronous rectification?

Yes-the intrinsic body diodes support reverse recovery times of 22 ns and forward voltage of 0.85–0.95 V at 5.5 A, making them suitable for synchronous rectification in buck converters up to ~1 MHz. However, external Schottky diodes may be preferred for ultra-low V_F requirements below 0.5 V.

What is the gate threshold voltage range and how does it affect 3.3 V logic drive?

V_GS(th) is specified from 1.0 V (min) to unspecified max at I_D = 250 µA. At 3.3 V gate drive, the device conducts but achieves only partial enhancement-R_DS(on) rises significantly above 70 mΩ. Reliable switching requires ≥4.5 V gate drive for defined 70 mΩ performance.