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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZXMN6A25G

Name: ZXMN6A25G
Brand: Diodes Incorporated
SKU: ZXMN6A25G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXMN6A25G

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: ZXMN6A25G.pdf

Description:: MOSFET N-CH 60V 4.8A SOT223

Quantity:: RFQ Add To RFQ list

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Inventory:3,901

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Product details

Overview

ZXMN6A25G from Diodes Incorporated is a 60V, 6.7A N-channel enhancement-mode MOSFET in SOT223 package, featuring 50 mΩ R_DS(on) at V_GS = 10 V and 70 mΩ at 4.5 V, optimized for high-efficiency DC-DC converters and power management functions in industrial and consumer power supplies.

For engineers reviewing the ZXMN6A25G datasheet, ZXMN6A25G pinout, ZXMN6A25G application, or ZXMN6A25G equivalent, key selection criteria include its low gate charge (20.4 nC @ 10 V), fast switching (t_D(off) = 26.2 ns), body diode recovery performance (Q_rr = 21.4 nC), and thermal resistance (R_θJA = 32 °C/W on FR4).

Technical Context

This MOSFET employs planar silicon technology with optimized channel geometry to simultaneously reduce R_DS(on) and output capacitance (C_oss = 104 pF), enabling high-frequency operation in synchronous buck and boost topologies. Its gate threshold voltage (V_GS(th) = 1.0 V min) supports 4.5 V logic-level drive compatibility.

The device integrates a robust body diode with reverse recovery time (t_rr = 22 ns) and low forward voltage (V_SD = 0.85–0.95 V), making it suitable for freewheeling paths where reverse recovery losses must be minimized in continuous conduction mode.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Withstands up to 60 V drain-source blocking voltage, suitable for 48 V bus and 24 V industrial systems.
R_DS(on) @ 10 V	50 mΩ - Enables <1.8 W conduction loss at 6 A, critical for thermally constrained SOT223 layouts.
R_DS(on) @ 4.5 V	70 mΩ - Ensures usable on-resistance with standard 5 V microcontroller GPIO drive.
Q_g @ 10 V	20.4 nC - Low total gate charge reduces driver power and enables >1 MHz switching without excessive gate drive loss.
C_iss	1063 pF - Input capacitance determines gate drive strength requirement and Miller effect sensitivity.
t_D(off)	26.2 ns - Short turn-off delay supports precise timing control in PWM controllers with tight dead-time requirements.
R_θJA (Note 6)	32 °C/W - Junction-to-ambient thermal resistance measured on FR4 PCB at t ≤10 s, defining short-pulse power handling.

Pinout & Package

Package: SOT223 (Type DN), surface-mount, 4-terminal configuration with drain-connected tab for enhanced thermal dissipation. Molded plastic housing rated UL 94V-0; matte tin annealed terminals.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connected to ground or low-side return path in buck converters.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring low-current drive; sensitive to ESD and layout-induced ringing.
Pin 3 (Drain)	Power output	High-current drain connection; internally bonded to exposed metal tab for thermal and electrical conduction.
Tab (Drain)	Drain terminal (thermal pad)	Electrically and thermally tied to drain; must be soldered to PCB copper pour for R_θJA = 32 °C/W performance.

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	70 mΩ enables direct interface with 5 V logic without level-shifting, reducing BOM count in compact power modules.
Fast body diode recovery	t_rr = 22 ns and Q_rr = 21.4 nC minimize switching loss and voltage overshoot during hard commutation in synchronous rectification.
Low input capacitance	C_iss = 1063 pF reduces gate drive energy and improves EMI profile in high-frequency SMPS designs.
Green compound packaging	Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets IEC 61249-2-21 and automotive environmental compliance.

Applications

DC-DC Buck Converter

LED Backlight Driver

Use Scenario: Step-down regulation from 24 V input to 5 V/3.3 V rails in industrial HMIs and embedded controllers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in continuous conduction mode, operating at 500 kHz–1 MHz.

Use Value: 70 mΩ R_DS(on) at 4.5 V ensures >92% efficiency at 3 A load while maintaining stable thermal rise on 2-layer PCB.

Use Scenario: Constant-current LED string driver for LCD panel backlighting in commercial displays.

IC Role / Device Role / Timing Role: High-side switch controlling current through boost converter inductor and LED string.

Use Value: Fast t_D(off) (26.2 ns) and low Q_gd (5.1 nC) enable precise PWM dimming at 1–20 kHz without trailing-edge distortion.

USB-C Power Delivery

Industrial Power Management

Use Scenario: Load switch in USB-C PD sink applications managing 20 V/3 A input before buck conversion.

IC Role / Device Role / Timing Role: Inrush-limited high-side power switch with controlled turn-on via gate resistor network.

Use Value: 60 V V_DSS provides margin against transient surges on unregulated 20 V bus; R_DS(on) < 50 mΩ limits dropout to <150 mV at full load.

Use Scenario: Primary-side switch in isolated flyback auxiliary supply for PLC I/O modules.

IC Role / Device Role / Timing Role: Self-oscillating or controller-driven switch operating at 65–130 kHz with intermittent duty cycle.

Use Value: R_θJA = 32 °C/W allows 3.9 W dissipation without heatsink, supporting compact 12 mm × 12 mm board area constraints.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN601DWKQ-7	60 V, 5.5 A, R_DS(on) = 55 mΩ @ 10 V, SOT23 package, higher R_θJA (125 °C/W)	Limited to lower-current, space-constrained applications due to smaller package and reduced thermal capability	Select when board area is critical and power dissipation remains below 0.5 W.
IPD220N06N3G	60 V, 220 A, R_DS(on) = 2.2 mΩ @ 10 V, TO-252 package, 10× higher gate charge (Q_g = 200 nC)	Designed for high-current motor drives and server VRMs, not compatible with SOT223 footprint or gate drive strength	Choose only when scaling to >10 A loads and upgrading to multilayer thermal PCBs with dedicated gate drivers.

Compared with DMN601DWKQ-7 and IPD220N06N3G, ZXMN6A25G uniquely balances 6.7 A current rating, SOT223 thermal performance (32 °C/W), and moderate gate charge (20.4 nC), making it optimal for mid-power industrial DC-DC stages where footprint, efficiency, and driver simplicity are jointly constrained.

Availability

ZXMN6A25G is available at Aetrix Electronics and suitable for DC-DC converters, LED backlight drivers, and industrial power management systems requiring stable component supply and RoHS-compliant, halogen-free manufacturing.

Supply support for ZXMN6A25G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and the Americas.

ZXMN6A25G belongs to Diodes' ZXMN series of logic-level N-channel MOSFETs, engineered specifically for high-efficiency, medium-power switching in cost-sensitive industrial and consumer power supplies.

FAQ

What is the maximum continuous drain current for ZXMN6A25G at 70°C ambient?

The maximum continuous drain current is 5.4 A at T_A = +70°C under steady-state conditions on FR4 PCB (Note 6). This derating reflects thermal limitations imposed by the SOT223 package's R_θJA = 32 °C/W and junction temperature limit of 150°C. Operation above this current requires forced airflow or copper pour expansion.

Does ZXMN6A25G have an integrated body diode, and what are its key parameters?

Yes, ZXMN6A25G includes an intrinsic body diode with forward voltage V_SD = 0.85–0.95 V at I_S = 5.5 A and reverse recovery characteristics t_rr = 22 ns and Q_rr = 21.4 nC. These values are measured under standardized conditions (I_F = 2.2 A, dI/dt = 100 A/μs) and define its suitability for synchronous rectification and freewheeling roles.

Can ZXMN6A25G be used in automotive applications?

ZXMN6A25G itself is not AEC-Q101 qualified. For automotive use, Diodes offers the automotive-grade variant ZXMN6A25GQ, which undergoes stress testing per AEC-Q101, is PPAP-capable, and manufactured in IATF 16949-certified facilities. The "Q" suffix denotes qualification for automotive powertrain and body electronics.

What is the recommended PCB layout for thermal performance?

For optimal thermal performance, the exposed drain tab must be soldered to a minimum 25 mm × 25 mm single-sided 1 oz copper pour on FR4. Pad dimensions should follow Diodes' suggested layout (C = 2.30 mm, C1 = 6.40 mm, Y2 = 8.00 mm). Avoid thermal relief on the tab pad and ensure ≥0.5 mm clearance to adjacent traces to prevent solder wicking.

ZXMN6A25G Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 4.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 3.6A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 20.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1063 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223-3

ZXMN6A25G FAQ

1.How can I place an order for ZXMN6A25G through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMN6A25G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMN6A25G reliable?

The price and inventory of ZXMN6A25G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN6A25G is usually 5 days.

3.What payment methods are accepted for ZXMN6A25G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMN6A25G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMN6A25G?

ZXMN6A25G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMN6A25G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMN6A25G?

For technical support, including ZXMN6A25G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN6A25G requirements.

6.How does Aetrix verify that ZXMN6A25G is sourced from the original manufacturer or authorized distributors?

All ZXMN6A25G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN6A25G meets industry standards.

7.What is the process for return or replacement of ZXMN6A25G?

All ZXMN6A25G units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN6A25G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMN6A25G part is unused and in its original packaging.

Return procedure for ZXMN6A25G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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