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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZXMN6A25K

Name: ZXMN6A25K
Brand: Diodes Incorporated
SKU: ZXMN6A25K
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXMN6A25K

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: ZXMN6A25K.pdf

Description:: MOSFET N-CH 60V 7A TO252-3

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Product details

Overview

ZXMN6A25K from Zetex Semiconductors is a 60V, 10.7A N-channel enhancement-mode trench MOSFET in DPAK package, optimized for high-efficiency power management with R_DS(on) = 0.050 Ω @ V_GS = 10V and fast switching (t_d(off) = 26.2 ns). It serves as a main or synchronous rectifier switch in DC-DC converters and motor control H-bridges.

For engineers reviewing the ZXMN6A25K datasheet, ZXMN6A25K pinout, ZXMN6A25K application, or ZXMN6A25K equivalent, key selection criteria include verified R_DS(on) at 4.5V (0.070 Ω), body diode reverse recovery charge (Q_rr = 21.4 nC), thermal resistance (R_JA = 12.7 °C/W on 50 mm × 50 mm PCB), and gate charge profile (Q_g = 20.4 nC @ 10V).

Technical Context

This MOSFET employs a trench-gate structure to simultaneously minimize conduction loss and switching loss. Its low threshold voltage (V_GS(th) = 1–3 V) enables reliable turn-on from 4.5V logic-level drivers, while its 64 pF Crss supports stable high-frequency operation up to 1 MHz.

The integrated body diode exhibits low forward voltage (V_SD = 0.85–0.95 V @ I_S = 5.5 A) and fast reverse recovery (t_rr = 22.0 ns), making it suitable for synchronous rectification where diode conduction occurs during dead-time intervals.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche; supports 48V bus systems with margin.
R_DS(on)	0.050 Ω @ V_GS = 10V - Enables ≤0.54 W conduction loss at 10.7 A continuous drain current.
I_D (cont)	10.7 A @ T_amb = 25°C - Validated continuous current rating on standard FR4 PCB with 2 oz copper.
Q_g	20.4 nC @ V_GS = 10V - Determines gate driver power requirement and switching transition time.
t_d(off)	26.2 ns - Critical for minimizing shoot-through risk in half-bridge configurations.
Q_rr	21.4 nC - Quantifies stored charge in body diode; directly impacts switching loss during commutation.
R_JA	12.7 °C/W - Thermal resistance on 50 mm × 50 mm × 1.6 mm FR4 with 2 oz copper; defines safe operating area at ambient.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for enhanced thermal dissipation; standardized 3-pin configuration with G-S-D terminal layout.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives voltage-controlled signal to modulate channel conductivity; requires <20.4 nC charge for full turn-on.
S (Source)	Reference node for gate drive and current return path	Common connection point for load return and gate driver ground; body diode anode.
D (Drain)	Main current output terminal	High-side or low-side power path node; thermally connected to exposed pad for PCB heat spreading.

Key Features

Feature	Design Value
Trench-gate architecture	Enables simultaneous optimization of R_DS(on) and switching speed without process trade-offs.
Logic-level gate drive compatibility	Guaranteed turn-on at V_GS ≥ 4.5V (R_DS(on) = 0.070 Ω), eliminating need for level-shifting circuitry.
Low Crss / Ciss ratio	Crss = 64 pF, Ciss = 1063 pF → Miller ratio ≈ 6%, reducing susceptibility to dv/dt-induced false turn-on.
Integrated body diode with Q_rr spec	Q_rr = 21.4 nC enables predictable synchronous rectification loss modeling in buck converters.

Applications

DC-DC Buck Converters

Motor Control H-Bridges

Use Scenario: High-efficiency 12V-to-5V/3.3V point-of-load conversion in telecom and industrial power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diode to reduce conduction loss and improve light-load efficiency.

Use Value: Achieves >92% efficiency at 5 A output due to 0.050 Ω R_DS(on) and low Q_rr-driven switching loss.

Use Scenario: Bidirectional 24V brushed DC motor drive in factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge leg; paired with complementary high-side device for PWM control.

Use Value: Supports 10 kHz PWM with <100 ns total switching time (t_r + t_f = 14.6 ns), minimizing dead-time losses.

Power Disconnect Switches

Load Switching in Embedded Systems

Use Scenario: Hot-swap protection and inrush limiting for 48V backplane modules in networking equipment.

IC Role / Device Role / Timing Role: Main series pass element controlled by dedicated load switch IC or microcontroller GPIO.

Use Value: Withstands 36 A pulsed drain current (I_DM) and limits inrush via controlled V_GS ramp, avoiding fuse blowout.

Use Scenario: Controlled 5V/3.3V rail enable for FPGA I/O banks or sensor subsystems in portable instrumentation.

IC Role / Device Role / Timing Role: Single-N low-side load switch providing ON/OFF control and reverse-current blocking.

Use Value: Body diode reverse recovery (t_rr = 22 ns) prevents backfeed during rail sequencing, ensuring clean power-up sequence.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06	R_DS(on) = 0.018 Ω @ 10V but larger TO-220 package; higher Q_g = 72 nC.	Requires heatsink for >5 A continuous; unsuitable for space-constrained DPAK layouts.	Select when lower R_DS(on) justifies board area and thermal overhead.
IRF7470PBF	R_DS(on) = 0.055 Ω @ 10V; Q_rr = 34 nC - 56% higher than ZXMN6A25K.	Higher body diode loss in synchronous rectification; reduced efficiency at 500 kHz+ switching.	Select only if footprint compatibility with SO-8 is required over thermal performance.

Compared with STP60NF06 and IRF7470PBF, ZXMN6A25K delivers optimal balance of low R_DS(on), fast switching, and compact DPAK thermal performance-making it preferred for high-density, medium-power DC-DC and motor drive designs where board area and efficiency are jointly constrained.

Availability

ZXMN6A25K is available at Aetrix Electronics and suitable for DC-DC converters, motor control H-bridges, and power disconnect switches requiring stable component supply and long-term industrial lifecycle support.

Supply support for ZXMN6A25K includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Zetex Semiconductors (now part of Diodes Incorporated) is a UK-based ISO 9001/TS16949-certified designer of high-performance analog and power semiconductors.

ZXMN6A25K belongs to Zetex's trench-MOSFET product line, engineered specifically for high-efficiency, medium-voltage power conversion in space- and thermally-constrained applications.

FAQ

What is the maximum gate-source voltage rating for ZXMN6A25K?

The absolute maximum V_GS is ±20 V. Exceeding this risks permanent gate oxide damage. Recommended operating range is –12 V to +15 V for robustness against transients. Gate drive circuits must include clamping (e.g., Zener diode) when using controllers with >15 V output swing.

Can ZXMN6A25K be used in 48V automotive body electronics?

Yes - its 60 V V_DSS provides 20% margin above 48 V nominal systems, and it meets AEC-Q101 stress test requirements per Zetex qualification reports. However, junction temperature must remain ≤150°C under worst-case load and ambient conditions, requiring appropriate PCB copper area per datasheet thermal guidelines.

Does ZXMN6A25K have a specified avalanche energy rating?

No - the datasheet does not specify single-pulse or repetitive avalanche energy (E_AS). It is rated for unclamped inductive switching only under defined test conditions (V_DD = 30 V, L = 0.1 mH, I_AS = 10.7 A). For avalanche-prone topologies, derating or external clamping is required.

How does the body diode performance compare to discrete Schottky diodes?

ZXMN6A25K's body diode has V_SD = 0.85–0.95 V at 5.5 A, higher than typical 0.4–0.55 V Schottky forward drop. However, its Q_rr = 21.4 nC and t_rr = 22 ns are superior to most 60 V Schottkys (Q_rr > 40 nC), enabling lower switching loss in synchronous rectification despite higher conduction loss.

ZXMN6A25K Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 3.6A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1063 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.11W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252-3

ZXMN6A25K FAQ

1.How can I place an order for ZXMN6A25K through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMN6A25K on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMN6A25K reliable?

The price and inventory of ZXMN6A25K are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN6A25K is usually 5 days.

3.What payment methods are accepted for ZXMN6A25K?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMN6A25K transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMN6A25K?

ZXMN6A25K orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMN6A25K order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMN6A25K?

For technical support, including ZXMN6A25K datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN6A25K requirements.

6.How does Aetrix verify that ZXMN6A25K is sourced from the original manufacturer or authorized distributors?

All ZXMN6A25K products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN6A25K meets industry standards.

7.What is the process for return or replacement of ZXMN6A25K?

All ZXMN6A25K units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN6A25K, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMN6A25K part is unused and in its original packaging.

Return procedure for ZXMN6A25K:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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