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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZXMN6A25N8TA

Name: ZXMN6A25N8TA
Brand: Diodes Incorporated
SKU: ZXMN6A25N8TA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXMN6A25N8TA

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: ZXMN6A25N8TA.pdf

Description:: MOSFET N-CH 60V 4.3A 8SO

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Product details

Overview

ZXMN6A25N8TA from Zetex Semiconductors is a 60V N-channel enhancement-mode Trench MOSFET in SO8 package, featuring 0.050 Ω R_DS(on) at V_GS = 10 V, 7.0 A continuous drain current, and fast switching (t_d(on) = 3.8 ns, t_f = 10.6 ns). It serves as a high-efficiency power switch in DC-DC converters and motor control circuits where low conduction loss and rapid turn-off are critical.

For engineers reviewing the ZXMN6A25N8TA datasheet, ZXMN6A25N8TA pinout, ZXMN6A25N8TA application, or ZXMN6A25N8TA equivalent, key selection criteria include verified R_DS(on) at 4.5 V gate drive, SO8 thermal performance (R_θJL = 30.2 °C/W), body diode recovery (Q_rr = 21.4 nC), and safe operating area limits up to 60 V.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance while maintaining robust avalanche capability and stable threshold voltage (V_GS(th) = 1–3 V). Its dynamic parameters-including C_iss = 1063 pF, C_rss = 64 pF, and Q_g = 20.4 nC at 10 V-are optimized for synchronous buck topologies requiring minimal gate drive energy and reduced switching losses.

The device integrates a monolithic source-drain body diode with V_SD = 0.85–0.95 V at I_S = 5.5 A and t_rr = 22.0 ns under 100 A/μs di/dt, enabling efficient freewheeling in hard-switched converters without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage compatible with 48 V input systems and transient clamping up to ±20 V gate drive
R_DS(on)	0.050 Ω @ V_GS = 10 V - Enables ≤0.13 W conduction loss at 7 A, supporting high-current point-of-load regulation
I_D (cont)	7.0 A @ T_L = 25 °C - Sustains full-rated load with SO8 lead-frame thermal path (R_θJL = 30.2 °C/W)
Q_g	20.4 nC @ V_GS = 10 V - Determines gate driver sizing; enables <100 ns total switching transition with 200 Ω drive impedance
t_f	10.6 ns - Limits shoot-through risk in half-bridge configurations operating above 500 kHz
V_GS(th)	1–3 V - Ensures reliable turn-on with 3.3 V logic-level microcontrollers without level-shifting circuitry
Q_rr	21.4 nC - Quantifies reverse recovery charge affecting efficiency and EMI in discontinuous conduction mode

Pinout & Package

SO8 surface-mount package (4.80 × 5.00 mm footprint) with exposed drain pad for enhanced thermal dissipation; JEDEC MS-012AC compliant outline.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal accepting 0–20 V drive; requires <20.4 nC charge for full enhancement
S	Source	Reference node for gate drive and current return path; tied to power ground in low-side switch configuration
D (pins 1,2,3,4,6,7,8)	Drain	Main power output terminal; pins 1,2,3,4,6,7,8 internally bonded to single drain metallization for 7 A current sharing

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	0.070 Ω - Supports direct interfacing with 5 V and 3.3 V PWM controllers without gate boosting
Fast switching speed	t_d(off) = 26.2 ns - Reduces dead-time requirements and improves light-load efficiency in synchronous rectification
Low gate charge	Q_gs = 4.1 nC - Minimizes Miller-induced oscillation during voltage transitions across drain-source
Robust body diode	t_rr = 22.0 ns - Enables clean commutation in flyback and active clamp forward converters

Applications

DC-DC Converters

Motor Control

Use Scenario: Synchronous buck converter in industrial PLC power supply delivering 12 V/5 A from 48 V bus.

IC Role / Device Role / Timing Role: Low-side power switch handling continuous 5 A load with 500 kHz PWM frequency.

Use Value: 0.050 Ω R_DS(on) limits conduction loss to 1.25 W, enabling operation without forced air cooling on standard FR4 PCB.

Use Scenario: H-bridge driver for 24 V brushed DC motor in automated valve actuator.

IC Role / Device Role / Timing Role: High-current quadrant switch controlling bidirectional motor current up to 7 A peak.

Use Value: Fast t_f = 10.6 ns ensures precise current reversal timing, reducing torque ripple below 3% at 20 kHz PWM.

Power Management Functions

Disconnect Switches

Use Scenario: OR-ing FET in redundant 24 V telecom power distribution unit.

IC Role / Device Role / Timing Role: Ideal diode replacement managing hot-swap sequencing and reverse-current blocking.

Use Value: V_GS(th) = 1–3 V allows automatic turn-on when input exceeds output by >1.5 V, eliminating need for external bias circuitry.

Use Scenario: Inrush-limiting switch for 48 V battery backup system in medical imaging equipment.

IC Role / Device Role / Timing Role: Controlled power-up switch isolating downstream capacitors during startup.

Use Value: SO8 package with R_θJL = 30.2 °C/W sustains 7 A surge for 100 ms without exceeding 150 °C junction temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN601DWK-7	R_DS(on) = 0.045 Ω @ 10 V but higher Q_g = 25 nC; SO8 package with identical pinout	Better conduction loss but slower switching; less suitable for >1 MHz designs	Prefer when thermal margin is constrained and switching frequency ≤300 kHz
SI7157DP-T1-GE3	R_DS(on) = 0.052 Ω @ 10 V; lower C_iss = 820 pF but no specified Q_rr data	Reduced drive power demand but unverified body diode performance in hard-commutated topologies	Select only if body diode recovery is not critical and gate drive strength is limited

Compared with DMN601DWK-7 and SI7157DP-T1-GE3, ZXMN6A25N8TA offers the best balance of low R_DS(on), controlled Q_rr, and documented SO8 thermal behavior-making it optimal for compact, high-frequency DC-DC and motor drives where both efficiency and reliability are design-critical.

Availability

ZXMN6A25N8TA is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and power management functions requiring stable component supply and consistent SO8 thermal performance.

Supply support for ZXMN6A25N8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Zetex Semiconductors (now part of Diodes Incorporated) is an ISO 9001/TS16949-certified designer of high-performance analog and discrete semiconductors, headquartered in Oldham, UK.

The ZXMN series targets high-efficiency power switching applications, emphasizing trench-MOSFET optimization for low R_DS(on), fast switching, and robust thermal behavior in standard surface-mount packages.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The ZXMN6A25N8TA supports 4.5 A continuous drain current at T_A = 70°C when mounted on FR4 PCB per test condition (b). This derating reflects thermal resistance R_θJA = 45 °C/W and ensures junction temperature remains within −55°C to +150°C limits under sustained load.

Does this MOSFET require a gate resistor for stability?

Yes-a gate resistor of ≈6 Ω is recommended to dampen ringing caused by L_g–C_iss resonance, as validated in the datasheet's switching test circuit (RG ≅ 6.0 Ω). Omitting it risks overshoot exceeding ±20 V V_GS rating during fast edge transitions.

Is the body diode suitable for continuous reverse conduction?

The integrated body diode supports continuous source current up to 4.1 A (I_S) at T_A = 25°C, with V_SD = 0.85–0.95 V at 5.5 A. Its 22.0 ns t_rr and 21.4 nC Q_rr are characterized for hard commutation, making it viable for freewheeling in non-synchronous topologies.

Can ZXMN6A25N8TA be used in linear regulator applications?

No-it is not characterized or rated for linear-mode operation. The Safe Operating Area curve shows limited DC capability (≤1.56 W at 25°C ambient), and prolonged operation in the linear region risks thermal runaway due to positive temperature coefficient of R_DS(on).

ZXMN6A25N8TA Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 3.6A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1063 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 1.56W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

ZXMN6A25N8TA FAQ

1.How can I place an order for ZXMN6A25N8TA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMN6A25N8TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMN6A25N8TA reliable?

The price and inventory of ZXMN6A25N8TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN6A25N8TA is usually 5 days.

3.What payment methods are accepted for ZXMN6A25N8TA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMN6A25N8TA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMN6A25N8TA?

ZXMN6A25N8TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMN6A25N8TA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMN6A25N8TA?

For technical support, including ZXMN6A25N8TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN6A25N8TA requirements.

6.How does Aetrix verify that ZXMN6A25N8TA is sourced from the original manufacturer or authorized distributors?

All ZXMN6A25N8TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN6A25N8TA meets industry standards.

7.What is the process for return or replacement of ZXMN6A25N8TA?

All ZXMN6A25N8TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN6A25N8TA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMN6A25N8TA part is unused and in its original packaging.

Return procedure for ZXMN6A25N8TA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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