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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZXMN7A11GQTA

Name: ZXMN7A11GQTA
Brand: Diodes Incorporated
SKU: ZXMN7A11GQTA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXMN7A11GQTA

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: ZXMN7A11GQTA.pdf

Description:: MOSFET BVDSS: 61V~100V SOT223 T&

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Product details

Overview

ZXMN7A11GQTA from Diodes Incorporated is a 70V N-channel enhancement-mode MOSFET qualified to AEC-Q101, with R_DS(on) = 0.13 Ω @ V_GS = 10 V, I_D = 3.8 A at T_A = +25°C, and SOT223 (Type DN) package. It serves as a high-reliability power switch in automotive DC-DC converters, motor control stages, and Class-D audio output circuits.

For engineers reviewing the ZXMN7A11GQTA datasheet, ZXMN7A11GQTA pinout, ZXMN7A11GQTA application, or ZXMN7A11GQTA equivalent, key selection criteria include its AEC-Q101 qualification, low 1.0 V gate threshold, 3.9 W power dissipation on FR-4 PCB, and body diode recovery time of 19.8 ns for fast-switching power stages.

Technical Context

This MOSFET employs planar silicon technology optimized for automotive-grade thermal stability and switching efficiency. Its 70 V BVDSS rating supports 48 V system architectures, while the 0.13 Ω RDS(on) at 10 V drive enables low conduction loss in high-current load switches.

The device features a fast turn-off delay (11.5 ns) and low Qgd (1.8 nC), enabling efficient operation in synchronous rectification and PWM-controlled motor drivers. Its body diode exhibits VSD = 0.85–0.95 V at IS = 2.5 A and tRR = 19.8 ns, supporting bidirectional current handling in H-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	70 V - Withstands up to 70 V drain-source voltage, suitable for 48 V automotive bus systems.
RDS(on)	0.13 Ω @ VGS = 10 V - Enables <0.5 W conduction loss at 2 A continuous drain current.
ID (continuous)	3.8 A @ TA = +25°C - Supports medium-power switching in compact SOT223 footprint.
VGS(th)	1.0 V min - Ensures reliable turn-on with low-voltage microcontroller GPIOs (e.g., 3.3 V logic).
tRR	19.8 ns - Reduces switching losses and EMI in high-frequency (>100 kHz) DC-DC converters.
Qg	7.4 nC @ VGS = 10 V - Matches standard gate drivers without requiring oversized driver ICs.
RθJA	32 °C/W - Delivers 3.9 W power dissipation on FR-4 PCB, enabling thermally constrained layouts.

Pinout & Package

Package: SOT223 (Type DN), surface-mount, 4-terminal plastic molded case with exposed drain pad for thermal enhancement. Moisture sensitivity level 1 per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal	Connected to exposed copper pad; primary thermal path and high-side/high-current node.
Source (S)	Reference node for gate drive and current return	Common connection point for gate driver ground and load return; defines VGS reference.
Gate (G)	Control input	High-impedance MOSFET control node; requires <7.4 nC charge for full turn-on at 10 V.
Drain (Tab)	Second drain connection (thermal & electrical)	Exposed metal tab electrically tied to Drain; must be soldered to PCB copper for thermal performance.

Key Features

Feature	Design Value
Low RDS(on) at 4.5 V drive	0.19 Ω - Enables direct drive from 5 V microcontrollers without level-shifting.
Fast switching with low Qgd	1.8 nC - Minimizes Miller-induced shoot-through risk in half-bridge configurations.
AEC-Q101 qualification	PPAP-capable, IATF16949-manufactured - Meets automotive change control and traceability requirements.
Green compound packaging	Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb) - Complies with EU ELV and OEM sustainability mandates.
Body diode with low VSD	0.85–0.95 V - Reduces forward conduction loss during freewheeling in motor and converter applications.

Applications

DC-DC Converters

Motor Control

Use Scenario: High-efficiency buck converter in 12 V/48 V automotive subsystems (e.g., ADAS camera power supply).

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 200–500 kHz PWM frequency.

Use Value: 0.13 Ω RDS(on) and 19.8 ns tRR reduce total power loss by >15% vs. legacy 0.25 Ω MOSFETs at 3 A load.

Use Scenario: Low-side switch in brushed DC motor driver for HVAC actuators or seat adjusters.

IC Role / Device Role / Timing Role: Pulse-width modulated power stage with bidirectional current capability via integrated body diode.

Use Value: 1.0 V VGS(th) ensures full enhancement under cold-cranking battery conditions (down to 6 V).

Class-D Audio Output

Power Disconnect Switch

Use Scenario: Output stage in automotive infotainment amplifier delivering 10–20 W into 4 Ω loads.

IC Role / Device Role / Timing Role: High-speed switching element in half-bridge topology with <12 ns turn-off delay.

Use Value: Low Qgd (1.8 nC) and fast tF (5.8 ns) suppress audible switching artifacts and improve THD+N.

Use Scenario: Load disconnect switch protecting ECUs during sleep mode or fault isolation.

IC Role / Device Role / Timing Role: Normally-open solid-state relay replacing mechanical relays in battery management modules.

Use Value: AEC-Q101 qualification and 70 V BVDSS ensure robustness against load dump transients (ISO 7637-2 Pulse 5a).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3020LSD-13	30 V BVDSS, 20 mΩ RDS(on) @ 10 V, SO-8 package	Limited to 24 V systems; higher current density but lower voltage margin	Select for cost-sensitive 12 V non-automotive applications where 70 V rating is unnecessary.
IPB070N15N3G	150 V BVDSS, 7 mΩ RDS(on), TO-263 package, higher Qg (32 nC)	Over-specified voltage rating; requires stronger gate driver due to 3× higher Qg	Choose only when 150 V transient immunity is mandatory and board space allows TO-263 mounting.

Compared with DMN3020LSD-13 and IPB070N15N3G, ZXMN7A11GQTA uniquely balances 70 V ruggedness, AEC-Q101 compliance, and SOT223 thermal performance-making it optimal for space-constrained 48 V automotive power stages where reliability and moderate current (≤3.8 A) are prioritized over ultra-low RDS(on) or extreme voltage headroom.

Availability

ZXMN7A11GQTA is available at Aetrix Electronics and suitable for automotive DC-DC converters, motor control modules, and Class-D audio output stages requiring stable component supply across production lifecycles.

Supply support for ZXMN7A11GQTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor manufacturer specializing in discrete, analog, and mixed-signal devices, with design centers in Asia, Europe, and the US.

ZXMN7A11GQTA belongs to Diodes' automotive-qualified PowerMOS family, engineered specifically for AEC-Q101-compliant power switching in 12 V–48 V vehicle subsystems including body electronics and infotainment.

FAQ

Is ZXMN7A11GQTA suitable for hot-swap applications?

Yes. Its 70 V BVDSS rating, low 1.0 V gate threshold, and 3.8 A continuous current capability enable controlled inrush limiting in 12 V/48 V hot-swap circuits. The device's 19.8 ns body diode recovery time minimizes voltage overshoot during sudden load insertion, and its AEC-Q101 qualification ensures reliability under repeated thermal cycling.

What is the maximum safe operating temperature for ZXMN7A11GQTA?

The junction temperature must not exceed +150°C, with storage range from –55°C to +150°C. At ambient +70°C, derated continuous current is 3.0 A (Note 6). Thermal design must account for RθJA = 32°C/W on FR-4 PCB; use ≥25 mm² copper pour under the drain tab to maintain TJ ≤ 125°C at full 3.8 A load.

Does ZXMN7A11GQTA require a gate resistor in typical automotive PWM circuits?

A gate resistor (typically 10–47 Ω) is recommended to dampen ringing and limit peak gate current. With Qg = 7.4 nC and typical 10 V drive, a 22 Ω resistor yields ~160 ns rise time-well within safe margins for 200 kHz PWM. Omitting it risks oscillation due to PCB trace inductance interacting with Ciss = 298 pF and Crss = 21 pF.

Can ZXMN7A11GQTA replace older SOT223 MOSFETs like ZXMN6A11Z in existing designs?

Yes, with validation. ZXMN7A11GQTA offers higher BVDSS (70 V vs. 60 V), lower RDS(on) (0.13 Ω vs. 0.16 Ω), and improved tRR (19.8 ns vs. 25 ns). Pinout and package are identical, but gate threshold is lower (1.0 V vs. 1.3 V), potentially increasing shoot-through risk in half-bridges-verify dead-time settings and driver strength before drop-in replacement.

ZXMN7A11GQTA Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 70 V

Current - Continuous Drain (Id) @ 25°C:: 2.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 130mOhm @ 4.4A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 7.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 298 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

ZXMN7A11GQTA FAQ

1.How can I place an order for ZXMN7A11GQTA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMN7A11GQTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMN7A11GQTA reliable?

The price and inventory of ZXMN7A11GQTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN7A11GQTA is usually 5 days.

3.What payment methods are accepted for ZXMN7A11GQTA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMN7A11GQTA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMN7A11GQTA?

ZXMN7A11GQTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMN7A11GQTA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMN7A11GQTA?

For technical support, including ZXMN7A11GQTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN7A11GQTA requirements.

6.How does Aetrix verify that ZXMN7A11GQTA is sourced from the original manufacturer or authorized distributors?

All ZXMN7A11GQTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN7A11GQTA meets industry standards.

7.What is the process for return or replacement of ZXMN7A11GQTA?

All ZXMN7A11GQTA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN7A11GQTA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMN7A11GQTA part is unused and in its original packaging.

Return procedure for ZXMN7A11GQTA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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