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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZXMNS3BM832TA

Name: ZXMNS3BM832TA
Brand: Diodes Incorporated
SKU: ZXMNS3BM832TA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXMNS3BM832TA

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-VDFN Exposed Pad

Datasheet:: ZXMNS3BM832TA.pdf

Description:: MOSFET N-CH 30V 2A 8MLP

Quantity:: RFQ Add To RFQ list

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Inventory:4,611

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Product details

Overview

ZXMNS3BM832TA from Diodes Incorporated (formerly Zetex) is a dual-die 3mm × 2mm MLP package integrating a 30V N-channel MOSFET (R_DS(on) = 0.18 Ω @ V_GS = 4.5V, I_D = 2.7A) and a 40V, 1A Schottky diode (V_F = 500 mV @ 1A). It serves as a synchronous rectifier or freewheeling pair in low-voltage DC-DC converters and power management circuits.

For engineers reviewing the ZXMNS3BM832TA datasheet, ZXMNS3BM832TA pinout, ZXMNS3BM832TA application, or ZXMNS3BM832TA equivalent, key selection criteria include verified dual-die thermal coupling, validated R_DS(on) and V_F at 25°C/100°C, MLP832 package footprint compatibility, and confirmed gate threshold (V_GS(th) = 0.7 V) for low-voltage drive.

Technical Context

This dual-component device places an N-channel MOSFET and Schottky diode on a shared thermally optimized MLP832 substrate with electrically isolated dies. The MOSFET features low gate charge (Q_g = 2.9 nC) and fast switching (t_r = 1.5 ns), while the Schottky exhibits ultra-low forward voltage and 12 ns reverse recovery time - enabling high-efficiency synchronous rectification without external timing coordination.

Thermal design relies on split-copper PCB layout per datasheet Note (d): 10 cm² of 1 oz copper, divided along the centerline to independently cool each die. Junction-to-ambient resistance varies from 73.5°C/W (both dies active) to 111°C/W (MOSFET-only operation), confirming its suitability for thermally constrained space-constrained buck converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for MOSFET in low-side switch or synchronous rectifier configurations
R_DS(on)	0.18 Ω @ V_GS = 4.5V, I_D = 1.5A - Enables ≤0.7 W conduction loss at 2.7A continuous drain current
V_F	500 mV @ I_F = 1A - Reduces diode conduction loss by ~50% vs. standard silicon PN diodes in 3–5 V output rails
Q_g	2.9 nC - Supports efficient 1–2 MHz switching with minimal gate driver power overhead
t_r/t_f	1.5 ns / 2.1 ns - Limits switching transition losses and EMI generation in high-frequency converters
T_j max	150°C (MOSFET), 125°C (Schottky) - Defines safe operating area under combined die power dissipation
Package	MLP832 (3 mm × 2 mm × 0.9 mm) - Provides 40% smaller footprint and 30% lower height than SO-8 equivalents

Pinout & Package

Package: MLP832 - 3 mm × 2 mm micro-leaded package with exposed thermal pad, 0.9 mm nominal height, and 8-pin configuration (dual-die layout with shared source/ground connection).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	MOSFET Source	Common source node tied to PCB ground plane; electrically connected to Schottky cathode
5	MOSFET Gate	Low-threshold (0.7 V) control input requiring minimal drive strength
6	MOSFET Drain	Switched high-side node for buck converter output stage or load switch
7, 8	Schottky Anode	Input node for freewheeling path; connects to inductor or switching node

Key Features

Feature	Design Value
Integrated MOSFET + Schottky	Single-package solution eliminates interconnect inductance and layout mismatch between discrete pairs
Ultra-low R_DS(on)	0.18 Ω enables <1 W conduction loss at 2.7 A, reducing thermal stress in compact PCBs
Sub-500 mV V_F	Minimizes forward drop in 3.3 V and 5 V buck outputs, improving efficiency by up to 2.5% over standard Schottkys
Fast switching (t_r = 1.5 ns)	Reduces overlap loss during dead-time transitions in synchronous rectifiers
Thermally optimized MLP	Split-copper PCB layout guidance ensures simultaneous thermal management of both dies

Applications

Point-of-Load DC-DC Converter

USB Power Delivery Sink

Use Scenario: 5 V → 3.3 V or 1.8 V step-down conversion in FPGA or SoC power rails.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET + integrated freewheeling Schottky in buck topology.

Use Value: Achieves >92% efficiency at 2 A load with 0.9 mm profile, eliminating need for separate Schottky placement.

Use Scenario: USB-C PD 3.0 compliant 5 V/3 A sink with tight thermal envelope.

IC Role / Device Role / Timing Role: Low-V_GS(th) MOSFET enables direct control from 3.3 V logic; Schottky handles reverse-current protection.

Use Value: Eliminates two discrete components and saves 8.5 mm² PCB area versus SO-8 dual-diode + MOSFET solution.

Industrial Sensor Node Power

Portable Medical Monitor Supply

Use Scenario: Battery-powered 24 V → 5 V/3.3 V conversion in wireless sensor transceivers.

IC Role / Device Role / Timing Role: High-efficiency buck controller companion with integrated power stage pair.

Use Value: R_DS(on) and V_F stability across −40°C to +85°C extends battery runtime by 11% vs. legacy solutions.

Use Scenario: Compact 3.7 V Li-ion → 3.3 V LDO bypass regulator with low-noise output.

IC Role / Device Role / Timing Role: Active freewheeling element replacing body diode conduction in ideal diode ICs.

Use Value: 0.18 Ω R_DS(on) reduces dropout voltage by 0.5 V at 1.5 A, preserving headroom for analog front-end stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar MOSFET + Schottky combination applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LSD-13	30 V, 3.5 A MOSFET + 40 V Schottky; R_DS(on) = 0.025 Ω @ 10 V but requires higher gate drive (V_GS(th) = 1.2 V)	Higher current rating suits 5 A loads; unsuitable for 2.5 V logic control	Select when gate drive ≥4.5 V is available and lower R_DS(on) outweighs footprint increase (SO-8 vs. MLP832)
SI7850DP-T1-GE3	30 V, 4.2 A MOSFET + 40 V Schottky; R_DS(on) = 0.022 Ω @ 4.5 V, but VF = 620 mV @ 1 A	Higher V_F increases conduction loss in 3.3 V rails; larger PowerPAK 1212-8 footprint	Prefer for higher-current (>3 A), less thermally constrained designs where Schottky V_F penalty is acceptable

Compared with DMN3025LSD-13 and SI7850DP-T1-GE3, ZXMNS3BM832TA offers the lowest gate threshold (0.7 V) and smallest footprint (3 mm × 2 mm), making it optimal for space- and voltage-limited 2–3 A DC-DC stages where thermal coupling between MOSFET and Schottky improves system-level efficiency.

Availability

ZXMNS3BM832TA is available at Aetrix Electronics and suitable for point-of-load DC-DC converters, USB power delivery sinks, and industrial sensor node power supplies requiring stable component supply and consistent MLP832 package sourcing.

Supply support for ZXMNS3BM832TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its high-performance analog and power portfolio, emphasizing precision, efficiency, and miniaturization for industrial and computing applications.

ZXMNS3BM832TA belongs to the Zetex Miniature Package Power Solutions (MPPS™) product line, engineered specifically for space-constrained, high-efficiency DC-DC conversion where integrated MOSFET-Schottky pairing reduces layout complexity and improves thermal coupling.

FAQ

What is the maximum continuous current rating for the MOSFET portion at 70°C ambient?

The MOSFET supports 2.18 A continuous drain current at T_A = 70°C with V_GS = 4.5V, mounted on 8 cm² of 2 oz copper per Zetex datasheet Note (b). This rating assumes split-copper layout and accounts for thermal derating from the 2.72 A value at 25°C.

Can the Schottky diode operate reliably at 100°C junction temperature?

Yes - the Schottky diode is rated for T_j = 125°C maximum, and its forward voltage remains stable at 420 mV @ 1A and 100°C (per datasheet VF curve). No thermal runaway occurs due to positive temperature coefficient of V_F.

Is the MLP832 package lead-free and RoHS-compliant?

Yes - ZXMNS3BM832TA uses lead-free matte tin plating and complies with RoHS Directive 2011/65/EU and REACH SVHC regulations. The MLP832 package meets JEDEC J-STD-020D moisture sensitivity level 1 (MSL-1) for unlimited floor life.

How is thermal coupling managed between the MOSFET and Schottky dies in this dual-die package?

Both dies share a common thermal pad but are electrically isolated. Datasheet thermal resistance values (e.g., R_θJA = 73.5°C/W for dual-die operation) assume split-copper PCB layout - 10 cm² total copper, divided along the centerline - ensuring independent heat spreading paths while maintaining mechanical co-location for minimized loop inductance.

ZXMNS3BM832TA Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-VDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id:: 700mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 2.9 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 314 pF @ 15 V

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-MLP (3x2)

ZXMNS3BM832TA FAQ

1.How can I place an order for ZXMNS3BM832TA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMNS3BM832TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMNS3BM832TA reliable?

The price and inventory of ZXMNS3BM832TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMNS3BM832TA is usually 5 days.

3.What payment methods are accepted for ZXMNS3BM832TA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMNS3BM832TA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMNS3BM832TA?

ZXMNS3BM832TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMNS3BM832TA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMNS3BM832TA?

For technical support, including ZXMNS3BM832TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMNS3BM832TA requirements.

6.How does Aetrix verify that ZXMNS3BM832TA is sourced from the original manufacturer or authorized distributors?

All ZXMNS3BM832TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMNS3BM832TA meets industry standards.

7.What is the process for return or replacement of ZXMNS3BM832TA?

All ZXMNS3BM832TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMNS3BM832TA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMNS3BM832TA part is unused and in its original packaging.

Return procedure for ZXMNS3BM832TA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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