Diodes Incorporated ZXMP10A17GQTC

Overview

ZXMP10A17GQTC from Diodes Incorporated is a 100V P-channel enhancement-mode MOSFET in SOT223 package, featuring R_DS(on) = 350 mΩ @ V_GS = −10 V, I_D = −2.4 A at T_A = +25°C, and AEC-Q101 qualification for automotive use. It serves as a high-efficiency power switch in DC-DC converters, motor controls, and solenoid drivers where low gate drive and fast switching are critical.

For engineers reviewing the ZXMP10A17GQTC datasheet, ZXMP10A17GQTC pinout, ZXMP10A17GQTC application, or ZXMP10A17GQTC equivalent, key selection criteria include its −100 V V_DSS, 424 pF C_iss, 7.1 nC Q_g at −6 V, −0.85 V V_SD body diode forward voltage, and thermal resistance R_θJA = 62.5 °C/W on standard FR-4 PCB.

Technical Context

This P-channel MOSFET operates with a gate threshold voltage (V_GS(th)) ranging from −2.0 V to −4.0 V, enabling robust turn-on control using standard logic-level gate drivers. Its low input capacitance (C_iss = 424 pF) and moderate total gate charge (Q_g = 7.1 nC @ −6 V) support efficient high-frequency switching up to several hundred kHz in synchronous buck or load-switch topologies.

The device integrates a body diode with V_SD = −0.85 V at −1.7 A and t_RR = 33 ns, suitable for freewheeling in non-synchronous converters. Thermal design is supported by R_θJC = 7.7 °C/W and R_θJA = 62.5 °C/W under defined PCB conditions, allowing 2.0 W continuous dissipation at ambient.

Key Specifications

Pinout & Package

Package: SOT223 (Type DN), surface-mount, thermally enhanced plastic package with exposed drain pad for improved heat dissipation. Molded compound is halogen- and antimony-free, UL 94V-0 rated, and RoHS compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with DMN10H170RFG-7 and SI2305DS-T1-GE3, ZXMP10A17GQTC provides optimal balance of 100 V rating, AEC-Q101 compliance, and moderate gate charge-making it uniquely suited for automotive and industrial 24–48 V power switches where reliability and transient margin are prioritized over minimum R_DS(on).

Availability

ZXMP10A17GQTC is available at Aetrix Electronics and suitable for motor controls, DC-DC converters, and relay/solenoid driving requiring stable component supply across automotive production, industrial automation, and embedded power management programs.

Supply support for ZXMP10A17GQTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power, signal integrity, and timing solutions for automotive, industrial, and consumer markets.

The ZXMP series targets high-efficiency power switching applications, emphasizing low R_DS(on), fast switching, and AEC-Q101 qualification for under-hood and body electronics designs.

FAQ

What is the maximum continuous drain current for ZXMP10A17GQTC at 70°C ambient?

The maximum continuous drain current is −1.9 A at T_A = +70°C, derated from −2.4 A at +25°C per the linear derating factor of 16 mW/°C. This value assumes mounting on a 25 mm × 25 mm × 1.6 mm FR-4 PCB with single-sided 1 oz copper in still air, as specified in Note 6 of the datasheet.

Is ZXMP10A17GQTC suitable for use in synchronous rectifier configurations?

No-ZXMP10A17GQTC is a P-channel MOSFET optimized for high-side switching, not synchronous rectification. Its body diode V_SD = −0.85 V and t_RR = 33 ns are adequate for non-synchronous freewheeling, but it lacks the low R_DS(on) and optimized gate charge profile required for efficient synchronous rectifier operation in buck or flyback topologies.

Does ZXMP10A17GQTC require a gate resistor for safe operation?

Yes-a gate resistor (typically 10–100 Ω) is recommended to dampen ringing, limit peak gate current, and control switching speed. With Q_g = 7.1 nC and fast t_F = 7.2 ns, an uncontrolled gate drive may cause EMI or shoot-through in half-bridge configurations; the resistor also protects the driver from capacitive inrush.

How does the SOT223 package of ZXMP10A17GQTC compare thermally to DPAK or SO-8 packages?

The SOT223 offers superior thermal performance over SO-8 (R_θJA ≈ 120 °C/W) but less than DPAK (R_θJA ≈ 40–50 °C/W). At 62.5 °C/W on standard FR-4, SOT223 delivers 2.0 W dissipation capability-sufficient for <2.5 A loads with modest heatsinking-while maintaining compact footprint and compatibility with automated assembly processes.