Diodes Incorporated ZXMP10A18K

Overview

ZXMP10A18K from Diodes Incorporated is a P-channel enhancement-mode MOSFET designed for high-efficiency power switching in DC-DC converters and motor control. It delivers -100V V(BR)DSS, 150mΩ RDS(on) at VGS = -10V, -5.9A continuous drain current at TA = +25°C, and AEC-Q101 qualification for automotive-grade reliability.

For engineers reviewing the ZXMP10A18K datasheet, ZXMP10A18K pinout, ZXMP10A18K application, or ZXMP10A18K equivalent, key selection criteria include its low gate threshold (-2V to -4V), fast switching (td(on) = 4.9ns), body diode recovery (trr = 49ns), and DPAK (TO252) thermal performance under surface-mount PCB constraints.

Technical Context

This trench-structured MOSFET uses a P-channel silicon process optimized for low conduction loss and minimized gate charge (Qg = 26.9nC). Its -100V breakdown voltage supports industrial and automotive 48V bus applications, while the -2V to -4V VGS(th) enables direct logic-level drive from 3.3V/5V controllers without level-shifting.

The device integrates a robust body diode with VSD = -0.85V at IS = -3.5A and Qrr = 107nC, supporting synchronous rectification and bidirectional current handling in half-bridge topologies. Thermal design is anchored to its 12.3°C/W RθJA on FR4 (Note 6), validated for 10.2W PD at TA = +25°C.

Key Specifications

Pinout & Package

Package: TO252 (DPAK), surface-mount, single-ended leadframe with exposed drain pad for thermal enhancement. Dimensions per AP02002: 6.10mm × 6.58mm × 2.29mm height, 0.315g mass.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with DMN10H180LQ and IPD10P10P4L, ZXMP10A18K offers balanced trade-offs: mid-range RDS(on) and Qg enable optimal efficiency across 300kHz–1MHz DC-DC topologies without compromising gate drive simplicity or thermal headroom.

Availability

ZXMP10A18K is available at Aetrix Electronics and suitable for DC-DC converters, automotive load disconnect circuits, and industrial motor drivers requiring stable component supply, long-term lifecycle assurance, and AEC-Q101 compliance.

Supply support for ZXMP10A18K includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

ZXMP10A18K belongs to Diodes' Zetex trench-MOSFET product line, engineered specifically for high-reliability power management in automotive and industrial systems where low RDS(on), fast switching, and AEC-Q101 validation are mandatory.

FAQ

What is the maximum safe operating junction temperature for ZXMP10A18K?

The absolute maximum junction temperature is +150°C, with continuous operation recommended up to +125°C for long-term reliability. Derating begins at TA = +25°C per the linear derating factor of 81.3mW/°C (Note 6), meaning usable power drops to ~5.1W at +85°C ambient on standard FR4.

Can ZXMP10A18K be driven directly from a 3.3V microcontroller GPIO?

Yes - its VGS(th) range of -2V to -4V ensures turn-on with 3.3V logic swing (VGS = -3.3V relative to source), delivering ≥-2.4A ID at RDS(on) ≤190mΩ. For full enhancement, a -10V gate drive is recommended to achieve 150mΩ and maximize efficiency.

Is the exposed drain pad on the DPAK package electrically connected to the drain terminal?

Yes - the large exposed copper pad on the bottom of the TO252 package is internally bonded to the drain (Pin 3) and must be soldered to a PCB copper pour for both electrical connection and thermal dissipation. Thermal vias beneath the pad are strongly recommended to improve RθJA.

Does ZXMP10A18K support reverse current flow through its body diode in bidirectional applications?

Yes - the integrated body diode supports continuous source current up to -10A and pulsed source current up to -21.1A. Its VSD = -0.85V at -3.5A and trr = 49ns make it suitable for bidirectional energy transfer in regenerative braking circuits and active clamp topologies.