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Diodes Incorporated ZXMP10A18KQTC

Part No.:
ZXMP10A18KQTC
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixZXMP10A18KQTC.pdf
Description:
MOSFET BVDSS: 61V~100V TO252 T&R
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,307

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Product details

Overview

ZXMP10A18KQTC from Diodes Incorporated is a P-channel enhancement-mode MOSFET rated for -100V VDSS, 150 mΩ RDS(ON) at VGS = -10 V, and -15 A continuous drain current at TC = +25°C; it is AEC-Q101 qualified and used in automotive DC-DC converters, power-management functions, disconnect switches, and motor control circuits.

For engineers reviewing the ZXMP10A18KQTC datasheet, ZXMP10A18KQTC pinout, ZXMP10A18KQTC application, or ZXMP10A18KQTC equivalent, key selection criteria include its -100V breakdown voltage, low gate threshold (-2 to -4 V), 100% production-tested UIS capability, TO252 (DPAK) thermal performance (RθJC = 1.75°C/W), and AEC-Q101 qualification status for automotive deployment.

Technical Context

This MOSFET operates as a high-side or low-side switching device in automotive power systems, with gate threshold voltage tightly specified between -2 V and -4 V at ID = -250 µA, enabling reliable turn-on with standard logic-level gate drivers. Its RDS(ON) remains stable across junction temperatures up to +150°C, supported by normalized on-resistance variation data in Figures 6–7.

The device features fast switching dynamics (tD(ON) = 4.9 ns, tF = 17.9 ns), low total gate charge (Qg = 26.9 nC), and robust avalanche capability (EAS = 78 mJ, IAS = -12.5 A), making it suitable for hard-switched topologies requiring repetitive unclamped inductive energy handling.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS -100 V - Withstands reverse drain-source voltage up to 100 V without breakdown, enabling use in 48 V automotive bus and higher-voltage DC-DC stages.
RDS(ON) 150 mΩ @ VGS = -10 V - Delivers low conduction loss at full rated current, reducing I²R heating in high-current power paths.
ID (continuous) -15 A @ TC = +25°C - Supports sustained load currents typical of motor drive H-bridge legs and battery disconnect circuits.
EAS 78 mJ - Specifies single-pulse avalanche energy handling, critical for reliability in inductive load switching without external snubbers.
RθJC 1.75°C/W - Enables efficient heat transfer from junction to case when mounted on copper thermal pads, supporting >70 W power dissipation under heatsink conditions.
Qg 26.9 nC - Determines gate drive power requirement and switching speed; compatible with standard automotive gate drivers (e.g., UCC27531).
AEC-Q101 Qualified - Meets stress-test requirements for automotive electronics, including temperature cycling, HTRB, and ESD, supporting PPAP submission.

Pinout & Package

Package: TO252 (DPAK), surface-mount, thermally enhanced plastic package with exposed drain pad for improved heat dissipation. Dimensions per Diodes Inc. outline drawing: D = 6.10 mm, E = 6.58 mm, H = 9.91 mm, L = 1.59 mm, b3 = 5.33 mm.

Pin/Terminal Circuit Role Design Meaning
Drain (D) Main current-carrying terminal (exposed pad) Connected to PCB thermal pad; primary path for high-current conduction and heat extraction to board copper.
Gate (G) Control input Receives negative gate-source voltage to turn on P-channel device; requires < -2 V to initiate conduction.
Source (S) Reference terminal for gate drive and current return Serves as common node for gate drive reference and body diode anode; tied to higher potential in high-side configurations.

Key Features

Feature Design Value
100% UIS tested in production Guarantees avalanche ruggedness per unit, eliminating need for system-level derating in inductive switching applications.
Low RDS(ON) at -6 V gate drive 190 mΩ enables operation with reduced gate drive voltage, simplifying bias design in 12 V automotive systems.
Fast switching with low Qgd/Qg ratio Qgd = 10.2 nC / Qg = 26.9 nC = 0.38 - Reduces Miller plateau duration and improves immunity to dv/dt-induced turn-on.
AEC-Q101 qualification + PPAP support Validated for automotive use with documented change control, traceable lot records, and IATF 16949 manufacturing.
Halogen- and antimony-free "Green" construction <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - Complies with automotive environmental directives and end-of-life recycling requirements.

Applications

Automotive DC-DC Converters High-Side Battery Disconnect Switch

Use Scenario: Step-down conversion from 48 V or 12 V battery rail to 5 V/3.3 V for infotainment and ADAS modules.

IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch in buck converter topology, operating at 200–500 kHz.

Use Value: Low RDS(ON) minimizes conduction loss; fast switching reduces transition losses; AEC-Q101 ensures long-term reliability under thermal cycling.

Use Scenario: Isolation of auxiliary battery bank during engine start or fault conditions in 12 V vehicle architecture.

IC Role / Device Role / Timing Role: High-side load switch controlled by microcontroller GPIO with active-low enable logic.

Use Value: -100 V rating provides margin against load-dump transients; 100% UIS testing prevents failure during cable-disconnect events.

Motor Control (H-Bridge Leg) Power Management in Body Control Module

Use Scenario: Driving brushed DC motors for HVAC actuators, seat adjusters, or window lifts in passenger compartments.

IC Role / Device Role / Timing Role: Low-side or high-side switch in half-bridge configuration, commutated at ≤20 kHz PWM frequency.

Use Value: Robust body diode (VSD = -0.8 V typ.) handles freewheeling current; RθJC = 1.75°C/W supports thermal management without heatsinks.

Use Scenario: Power sequencing and rail enable for microcontrollers, CAN transceivers, and sensor interfaces in BCMs.

IC Role / Device Role / Timing Role: Controlled power switch activated via PMIC output or discrete logic signal.

Use Value: Gate threshold range (-2 to -4 V) ensures clean turn-on with 3.3 V or 5 V logic; RoHS/Green compliance meets OEM material declarations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMP10H400SK3 VDSS = -100 V, RDS(ON) = 120 mΩ @ -10 V, Qg = 22.5 nC, TO252 package Lower RDS(ON) and gate charge improve efficiency in high-frequency switching; newer revision with updated process. Select for new designs requiring higher efficiency and longer product lifecycle; replaces ZXMP10A18KQTC where layout compatibility allows.
IPB180P04P4L-02 VDSS = -40 V, RDS(ON) = 1.8 mΩ @ -10 V, TO263 package, AEC-Q101 qualified Lower voltage rating but significantly lower on-resistance; larger package with higher thermal mass. Use only in 12 V systems where < -40 V rating suffices; not drop-in due to different voltage class and footprint.

Compared with DMP10H400SK3 and IPB180P04P4L-02, the ZXMP10A18KQTC offers balanced performance for legacy 48 V/12 V dual-rail automotive designs but lacks the efficiency gains of newer generations; its AEC-Q101 qualification remains valid, though Diodes recommends migration to DMP10H400SK3 for new projects.

Availability

ZXMP10A18KQTC is available at Aetrix Electronics and suitable for automotive DC-DC converters, battery disconnect switches, and motor control circuits requiring stable component supply, long-term manufacturability, and AEC-Q101-compliant sourcing.

Supply support for ZXMP10A18KQTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

The ZXMP10A18KQTC belongs to Diodes' automotive-qualified power MOSFET product line, engineered specifically for high-reliability 12 V and 48 V vehicle subsystems including powertrain, body electronics, and ADAS power supplies.

FAQ

Is ZXMP10A18KQTC recommended for new designs?

No - Diodes Incorporated explicitly states "THE ZXMP10A18KQ IS NOT RECOMMENDED FOR NEW DESIGNS. PLEASE USE THE DMP10H400SK3." This reflects process improvements and enhanced specifications in the replacement part, while maintaining TO252 packaging and functional equivalence for most applications.

What is the maximum safe operating temperature for ZXMP10A18KQTC?

The device has an operating junction temperature range of -55°C to +150°C. Its absolute maximum TJ is +150°C, validated by SOA curves (Figure 12) and transient thermal resistance data (Figure 13); sustained operation above this limit risks parametric shift or catastrophic failure.

Does ZXMP10A18KQTC include an integrated body diode?

Yes - it features a built-in parasitic body diode with forward voltage VSD = -0.8 V (typ.) at IS = -3.5 A and TJ = 25°C. This diode conducts source-to-drain current during freewheeling phases and is characterized in Figure 9 across temperature.

How is the TO252 package thermally optimized for ZXMP10A18KQTC?

The TO252 (DPAK) package uses an exposed drain pad soldered directly to a large PCB copper area, achieving RθJC = 1.75°C/W. Thermal performance depends on pad size, copper thickness, and internal layer connections - Diodes specifies minimum pad dimensions and recommends 2 oz copper with thermal vias to inner ground planes.

ZXMP10A18KQTC Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
150mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
26.9 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1055 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
71W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252 (DPAK)

ZXMP10A18KQTC FAQ

1.How can I place an order for ZXMP10A18KQTC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMP10A18KQTC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMP10A18KQTC reliable?

The price and inventory of ZXMP10A18KQTC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMP10A18KQTC is usually 5 days.

3.What payment methods are accepted for ZXMP10A18KQTC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMP10A18KQTC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMP10A18KQTC?

ZXMP10A18KQTC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMP10A18KQTC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMP10A18KQTC?

For technical support, including ZXMP10A18KQTC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMP10A18KQTC requirements.

6.How does Aetrix verify that ZXMP10A18KQTC is sourced from the original manufacturer or authorized distributors?

All ZXMP10A18KQTC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMP10A18KQTC meets industry standards.

7.What is the process for return or replacement of ZXMP10A18KQTC?

All ZXMP10A18KQTC units undergo pre-shipment inspection (PSI). If there is an issue with ZXMP10A18KQTC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMP10A18KQTC part is unused and in its original packaging.

Return procedure for ZXMP10A18KQTC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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