Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated ZXMP3A16N8TA

Part No.:
ZXMP3A16N8TA
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixZXMP3A16N8TA.pdf
Description:
MOSFET P-CH 30V 5.6A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:670

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

ZXMP3A16N8TA from Diodes Incorporated (formerly Zetex Semiconductors) is a -30V, 6.7A P-channel enhancement-mode trench MOSFET in SO-8 package. It delivers RDS(on) = 40 mΩ at VGS = -10 V and features fast switching (td(off) = 37.1 ns), low gate charge (Qg = 29.6 nC), and low threshold voltage (VGS(th) = -1.0 V). It is used in low-voltage power management disconnect switches and brushed DC motor control.

For engineers reviewing the ZXMP3A16N8TA datasheet, ZXMP3A16N8TA pinout, ZXMP3A16N8TA application, or ZXMP3A16N8TA equivalent, key selection criteria include verified RDS(on) at -4.5 V, body diode recovery (trr = 21.7 ns), thermal resistance (RθJA = 45 °C/W on FR4), and SO-8 footprint compatibility with PCB layout constraints.

Technical Context

This MOSFET employs a trench-gate structure optimized for low conduction loss and high-speed switching in unidirectional load-switching topologies. Its negative VGS(th) enables direct interface with 3.3 V/5 V logic-level controllers without level-shifting circuitry.

The device integrates a robust body diode with VSD = -0.85 V at -3.6 A and trr = 21.7 ns, supporting synchronous rectification and freewheeling in H-bridge motor drivers. Thermal performance is validated per JEDEC standards using 25 mm × 25 mm single-sided 1 oz copper FR4.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS-30 V - Maximum reverse drain-source blocking capability for 24 V rail protection
RDS(on)40 mΩ @ VGS = -10 V - Enables ≤270 mW conduction loss at 6.7 A continuous current
ID (continuous)-6.7 A @ TA = 25°C - Sustains full-rated load current with 2.8 W power dissipation limit
Qg29.6 nC @ VGS = -10 V - Determines gate drive energy requirement for 100 kHz PWM operation
td(off)37.1 ns - Limits minimum off-time in high-frequency buck or half-bridge configurations
VGS(th)-1.0 V (min) - Ensures reliable turn-on with 3.3 V microcontroller GPIOs
trr21.7 ns - Reduces switching losses during inductive flyback in motor control

Pinout & Package

Package: SO-8 (Surface-mount, 8-lead small outline integrated circuit), 4.8–5.0 mm width, 3.8–4.0 mm body length, 1.35–1.75 mm height, 1.27 mm lead pitch. Compliant with JEDEC MS-012AC.

Pin/TerminalCircuit RoleDesign Meaning
1 (G)GateControl terminal; accepts -10 V to 0 V logic for full enhancement; requires <100 nA leakage current handling
2 (S)SourceReference node for gate drive; tied to positive rail in high-side switch configuration
3 (D)DrainSwitched output node; connects to load return path; handles -26 A pulsed current
4 (S)SourceSecond source connection; electrically common with Pin 2; improves current sharing and thermal spreading
5 (S)SourceThird source connection; common with Pins 2 and 4; enhances thermal conduction to PCB copper pour
6 (D)DrainSecond drain connection; common with Pin 3; reduces package inductance for high di/dt switching
7 (D)DrainThird drain connection; common with Pins 3 and 6; supports high-current routing in compact layouts
8 (D)DrainFourth drain connection; common with Pins 3, 6, 7; lowers RDS(on) by parallel internal die connections

Key Features

FeatureDesign Value
Trench-gate architectureEnables 40 mΩ RDS(on) in SO-8 without die size penalty, reducing board area vs planar alternatives
Low VGS(th)-1.0 V minimum ensures guaranteed turn-on with standard 3.3 V I/O, eliminating external level shifters
Optimized gate charge profileQgd/Qg = 29% minimizes Miller plateau duration, improving hard-switching efficiency
Enhanced body diode21.7 ns trr and 16.1 nC Qrr reduce reverse recovery loss in bidirectional motor commutation
Thermal design supportRθJA = 45 °C/W on FR4 allows 2.8 W dissipation without heatsink in space-constrained applications

Applications

Load Disconnect SwitchBrushed DC Motor Driver

Use Scenario: Power sequencing in battery-powered IoT sensors where main supply must be isolated during sleep mode.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling 12 V rail to MCU peripherals; activated by active-low enable signal.

Use Value: 40 mΩ RDS(on) limits dropout to 80 mV at 2 A, preserving battery runtime; SO-8 footprint simplifies layout near connector zones.

Use Scenario: Directional control of 24 V, 5 A brushed DC fan in industrial HVAC systems.

IC Role / Device Role / Timing Role: Low-side switch in half-H bridge; paired with complementary high-side N-MOSFET for bidirectional rotation.

Use Value: 21.7 ns trr prevents shoot-through during polarity reversal; 29.6 nC Qg enables clean 20 kHz PWM gating with 100 Ω driver.

USB Power Delivery SwitchIndustrial PLC Output Module

Use Scenario: Overcurrent-protected 5 V/3 A USB-C port in docking station with hot-swap capability.

IC Role / Device Role / Timing Role: Load switch between upstream PD controller and downstream port; monitors VDS for fault detection.

Use Value: -30 V VDSS provides 2× margin over 5 V rail transients; -1.0 V VGS(th) ensures compatibility with USB PD policy engine GPIOs.

Use Scenario: 24 V DC digital output channel driving solenoid valves in factory automation PLC backplane.

IC Role / Device Role / Timing Role: Final-stage power switch interfacing FPGA I/O to field load; includes integrated body diode for inductive kick clamping.

Use Value: -26 A pulsed rating absorbs 100 ms inductive spikes; SO-8 thermal resistance supports 70°C ambient without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMG2305UX-13RDS(on) = 48 mΩ @ -4.5 V; higher Qg = 34 nC; same SO-8 packageSlightly lower efficiency at 3.3 V gate drive; longer td(off) = 45 nsPrefer when cost sensitivity outweighs 12% RDS(on) penalty and layout allows minor timing margin
SI2305DS-T1-E3RDS(on) = 55 mΩ @ -4.5 V; lower ID = -4.1 A; SOT-23 packageNot pin-compatible; limited thermal capacity (RθJA = 210 °C/W); unsuitable for >2 A loadsSelect only for space-constrained, low-current (<2 A) applications where SO-8 footprint is unavailable

Compared with DMG2305UX-13 and SI2305DS-T1-E3, ZXMP3A16N8TA offers superior conduction efficiency at 3.3 V logic levels, lower switching loss due to reduced Qg, and proven thermal performance in SO-8 - making it optimal for 5–6 A industrial load-switch designs requiring reliability and layout simplicity.

Availability

ZXMP3A16N8TA is available at Aetrix Electronics and suitable for load disconnect switches, brushed DC motor drivers, USB power delivery modules, and industrial PLC output stages requiring stable component supply and long-term production continuity.

Supply support for ZXMP3A16N8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its legacy of high-performance analog and discrete semiconductors with ISO 9001 and IATF 16949 certification.

This device belongs to Zetex's trench-MOSFET product line, engineered specifically for high-efficiency, low-voltage power management in space-constrained industrial and automotive-qualified systems.

FAQ

What is the maximum safe operating junction temperature for ZXMP3A16N8TA?

The absolute maximum junction temperature is +150°C, and the device is rated for continuous operation across -55°C to +150°C. Derating begins at 25°C ambient, with linear reduction of power dissipation at 22.4 mW/°C when mounted on FR4 with high-copper coverage, ensuring thermal stability under sustained 6.7 A loads.

Can ZXMP3A16N8TA be driven directly from a 3.3 V microcontroller GPIO?

Yes - its VGS(th) range of -1.0 V (min) to -2.5 V (max) guarantees full enhancement at 3.3 V logic high (0 V gate) and 0 V logic low (-3.3 V effective VGS). No level shifter is required, and typical RDS(on) remains ≤70 mΩ at VGS = -4.5 V, supporting robust 3.3 V control.

Does this MOSFET include an integrated body diode, and what are its key parameters?

Yes - it integrates a monolithic source-drain body diode with VSD = -0.85 V at -3.6 A and TJ = 25°C, trr = 21.7 ns, and Qrr = 16.1 nC. These values are measured under standardized conditions (IF = -2 A, di/dt = 100 A/μs) and support efficient freewheeling in motor and relay drive circuits without external diodes.

Is ZXMP3A16N8TA RoHS-compliant and halogen-free?

Yes - Diodes Incorporated certifies ZXMP3A16N8TA as fully compliant with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The device is also halogen-free per IEC 61249-2-21, with chlorine ≤900 ppm and bromine ≤900 ppm, meeting green compliance requirements for industrial and consumer end equipment.

ZXMP3A16N8TA Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
40mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
29.6 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1022 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
1.9W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

ZXMP3A16N8TA FAQ

1.How can I place an order for ZXMP3A16N8TA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMP3A16N8TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMP3A16N8TA reliable?

The price and inventory of ZXMP3A16N8TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMP3A16N8TA is usually 5 days.

3.What payment methods are accepted for ZXMP3A16N8TA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMP3A16N8TA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMP3A16N8TA?

ZXMP3A16N8TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMP3A16N8TA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMP3A16N8TA?

For technical support, including ZXMP3A16N8TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMP3A16N8TA requirements.

6.How does Aetrix verify that ZXMP3A16N8TA is sourced from the original manufacturer or authorized distributors?

All ZXMP3A16N8TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMP3A16N8TA meets industry standards.

7.What is the process for return or replacement of ZXMP3A16N8TA?

All ZXMP3A16N8TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMP3A16N8TA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMP3A16N8TA part is unused and in its original packaging.

Return procedure for ZXMP3A16N8TA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

ZXMP3A16N8TA Tags

  • ZXMP3A16N8TA
  • ZXMP3A16N8TA PDF
  • ZXMP3A16N8TA Datasheet
  • ZXMP3A16N8TA Specifications
  • ZXMP3A16N8TA Images
  • Diodes Incorporated
  • Diodes Incorporated ZXMP3A16N8TA
  • Buy ZXMP3A16N8TA
  • ZXMP3A16N8TA Price
  • ZXMP3A16N8TA Distributor
  • ZXMP3A16N8TA Supplier
  • ZXMP3A16N8TA Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER