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Diodes Incorporated ZXMP3A17DN8TA
- Part No.:
- ZXMP3A17DN8TA
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
ZXMP3A17DN8TA.pdf
- Description:
- MOSFET 2P-CH 30V 4.4A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,350
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Product details
Overview
ZXMP3A17DN8TA from Diodes Incorporated (formerly Zetex) is a dual P-channel enhancement-mode MOSFET with -30 V V(BR)DSS, 0.070 Ω RDS(on) at VGS = -10 V and ID = -3.2 A, and -4.4 A continuous drain current at TA = 25°C. It operates in low-voltage power management circuits requiring fast switching, low gate drive, and compact SOIC-8 packaging.
For engineers reviewing the ZXMP3A17DN8TA datasheet, ZXMP3A17DN8TA pinout, ZXMP3A17DN8TA application, or ZXMP3A17DN8TA equivalent, key selection criteria include dual P-channel configuration, thermal derating behavior under single/dual-die operation, body diode recovery performance (trr = 19.5 ns), and SOIC-8 footprint compatibility for motor drive and LCD backlighting layouts.
Technical Context
This device implements a trench-gate MOSFET structure optimized for low conduction loss and high-speed switching in bidirectional load control. Its symmetric dual-die layout supports independent channel operation with matched RDS(on) and gate charge characteristics (Qg = 15.8 nC at VGS = -10 V).
Thermal design requires distinction between single-active-die (RθJA = 100 °C/W) and dual-active-die (RθJA = 60 °C/W) mounting conditions on FR4 PCBs. The body diode exhibits VSD = -0.85 V at IS = -2.5 A and TJ = 25°C, with Qrr = 16.3 nC for synchronous rectification analysis.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | -30 V - Maximum blocking voltage before avalanche conduction in P-channel mode |
| RDS(on) | 0.070 Ω @ VGS = -10 V, ID = -3.2 A - Enables <1 W conduction loss at 3.2 A DC load |
| ID (cont) | -4.4 A @ TA = 25°C - Sustained current capability with SOIC-8 package and single-die thermal path |
| Qg | 15.8 nC @ VDS = -15 V, VGS = -10 V - Determines gate driver strength requirement for <30 ns turn-off delay |
| trr | 19.5 ns @ IF = -1.7 A, di/dt = 100 A/µs - Supports high-frequency PWM in synchronous buck or H-bridge topologies |
| VGS(th) | -1.0 V (typ) - Ensures reliable turn-on with 3.3 V logic-level gate drive |
| PD (max) | 2.1 W @ TA = 25°C (dual-die) - Sets maximum steady-state power dissipation under defined PCB copper area |
Pinout & Package
Package: SOIC-8 (3.9 mm × 4.9 mm × 1.75 mm height), surface-mount, dual P-channel layout with isolated source terminals per channel.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source 1 | Common source connection for Channel 1; ties to low-side reference in half-bridge |
| 4 | Gate 1 | Control terminal for Channel 1; requires negative bias relative to Source 1 for turn-on |
| 5 | Drain 1 | High-side output node for Channel 1; connects to load or bus rail |
| 6 | Drain 2 | High-side output node for Channel 2; electrically isolated from Drain 1 |
| 7 | Gate 2 | Control terminal for Channel 2; independently driven from Gate 1 |
| 8, 7, 6 | Source 2 | Common source connection for Channel 2; separate return path enables dual independent switches |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 0.070 Ω reduces I²R losses by >40% vs. comparable SOIC-8 P-MOSFETs at 3 A load |
| Fast switching | td(off) = 29.2 ns and tf = 8.72 ns enable >500 kHz PWM operation without excessive switching loss |
| Low threshold voltage | VGS(th) = -1.0 V allows full enhancement with 3.3 V microcontroller GPIO |
| Low-profile SOIC | 1.75 mm max height supports space-constrained PCBs in portable backlight and fan control modules |
Applications
| Motor Drive | LCD Backlighting |
|---|---|
Use Scenario: Bidirectional DC motor control in battery-powered tools and robotics. IC Role / Device Role / Timing Role: Dual P-channel high-side switch enabling H-bridge current reversal without external level shifters. Use Value: -1.0 V VGS(th) ensures robust turn-on from 3.3 V MCU outputs; matched RDS(on) minimizes torque asymmetry. | Use Scenario: Constant-current LED string regulation in automotive instrument clusters. IC Role / Device Role / Timing Role: Synchronous rectifier in boost converter output stage, replacing Schottky diode. Use Value: 19.5 ns trr and 16.3 nC Qrr reduce switching loss by 35% vs. discrete diode at 1 MHz PWM frequency. |
| Power OR-ing | USB Power Switching |
Use Scenario: Redundant 5 V supply selection in industrial controllers with hot-swap capability. IC Role / Device Role / Timing Role: Back-to-back P-MOSFET pair implementing ideal diode function with reverse current blocking. Use Value: Dual-die isolation prevents cross-conduction; -30 V rating accommodates input transients up to ±25 V. | Use Scenario: USB 2.0 port power enable/disable in docking stations and multi-port hubs. IC Role / Device Role / Timing Role: Low-side load switch controlling VBUS delivery with controlled slew rate. Use Value: 0.070 Ω RDS(on) limits voltage drop to <200 mV at 2.5 A, preserving USB 2.0 voltage compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC3025LSD-13 | RDS(on) = 0.035 Ω @ VGS = -10 V but SO-8 package has non-standard pinout (G-S-D-S-G-S-D-S) | Requires PCB redesign due to interleaved source/drain pins; unsuitable for drop-in replacement | Select only when lower RDS(on) justifies layout revision and thermal validation under dual-die operation |
| SI3483DV-T1-GE3 | Single P-channel, 20 V rating, 0.045 Ω RDS(on); no dual-die integration | Needs two devices and additional routing for dual-switch function; higher board area and gate drive complexity | Prefer when system voltage ≤16 V and space permits discrete implementation with tighter VGS(th) tolerance |
Compared with DMC3025LSD-13 and SI3483DV-T1-GE3, ZXMP3A17DN8TA provides verified dual-channel integration in standard SOIC-8, enabling direct replacement in existing motor drive and backlight designs without gate driver or layout changes.
Availability
ZXMP3A17DN8TA is available at Aetrix Electronics and suitable for motor drive, LCD backlighting, power OR-ing, and USB power switching requiring stable component supply across industrial and consumer production programs.
Supply support for ZXMP3A17DN8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its high-performance analog and power portfolio for industrial, computing, and consumer markets.
ZXMP3A17DN8TA belongs to Zetex's TrenchMOS™ family, engineered specifically for high-efficiency, low-voltage DC-DC conversion and load switching where fast turn-off and low gate charge are critical.
FAQ
What is the maximum safe operating junction temperature for ZXMP3A17DN8TA?
The absolute maximum junction temperature is +150°C, with continuous operation limited by thermal resistance and PCB copper area. At TA = 25°C with dual-die active, PD max = 2.1 W corresponds to TJ ≈ 155°C - thus derating is required above 125°C ambient to maintain reliability.
Can ZXMP3A17DN8TA be used in linear regulator applications?
No - it is not characterized or rated for linear-mode operation. The Safe Operating Area (SOA) curve shows pulse-limited capability only; sustained linear conduction risks thermal runaway due to positive RDS(on) temperature coefficient and lack of SOA testing beyond 100 µs pulses.
Is the body diode suitable for reverse polarity protection?
Yes - the integrated body diode supports reverse current blocking up to -30 V with VSD = -0.85 V at -2.5 A. However, its 19.5 ns trr and 16.3 nC Qrr make it less optimal than dedicated ideal diode controllers in high-frequency reverse-battery scenarios.
Does ZXMP3A17DN8TA support gate resistors for EMI reduction?
Yes - the 15.8 nC total gate charge and 2.80 nC Qgd allow effective Miller-effect control using 10–47 Ω series gate resistors. This slows rise/fall times to ~10–20 ns range, reducing dv/dt-induced noise while maintaining <1% duty cycle loss at 1 MHz PWM.
ZXMP3A17DN8TA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 4.4A (Ta)
- Rds On (Max) @ Id, Vgs:
- 70mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.28nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 630pF @ 15V
- Power - Max:
- 2.1W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
ZXMP3A17DN8TA FAQ
1.How can I place an order for ZXMP3A17DN8TA through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXMP3A17DN8TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXMP3A17DN8TA reliable?
The price and inventory of ZXMP3A17DN8TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMP3A17DN8TA is usually 5 days.
3.What payment methods are accepted for ZXMP3A17DN8TA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMP3A17DN8TA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXMP3A17DN8TA?
ZXMP3A17DN8TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXMP3A17DN8TA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXMP3A17DN8TA?
For technical support, including ZXMP3A17DN8TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMP3A17DN8TA requirements.
6.How does Aetrix verify that ZXMP3A17DN8TA is sourced from the original manufacturer or authorized distributors?
All ZXMP3A17DN8TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMP3A17DN8TA meets industry standards.
7.What is the process for return or replacement of ZXMP3A17DN8TA?
All ZXMP3A17DN8TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMP3A17DN8TA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXMP3A17DN8TA part is unused and in its original packaging.
Return procedure for ZXMP3A17DN8TA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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