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Diodes Incorporated ZXMP3F30FHTA
- Part No.:
- ZXMP3F30FHTA
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
ZXMP3F30FHTA.pdf
- Description:
- MOSFET P-CH 30V 2.8A SOT23
- Quantity:
- Payment:
- Shipping:
Inventory:4,754
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Product details
Overview
ZXMP3F30FHTA from Diodes Incorporated is a P-channel enhancement-mode MOSFET in SOT23 package, rated for -30V V(BR)DSS, 80mΩ RDS(on) at VGS = -10V, and -4.0A continuous drain current at TL = +25°C. It delivers low on-resistance and fast switching for compact power management in portable equipment and battery charging circuits.
For engineers reviewing the ZXMP3F30FHTA datasheet, ZXMP3F30FHTA pinout, ZXMP3F30FHTA application, or ZXMP3F30FHTA equivalent, key selection criteria include gate drive compatibility down to -4.5V, thermal performance in thermally enhanced SOT23, body diode conduction capability, and JEDEC-qualified reliability for high-reliability embedded systems.
Technical Context
This Trench MOSFET uses advanced silicon process technology to simultaneously reduce RDS(on) and maintain low gate charge (Qg = 7nC) and fast switching times (td(on) = 1.3ns, tf = 22ns). Its -1V to -3V gate threshold enables robust turn-on control with standard logic-level drivers.
The device integrates a built-in source-drain body diode with VSD = -0.8V to -1.2V at IS = -1.7A and trr = 14.6ns, supporting synchronous rectification and reverse polarity protection without external diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | -30V - Withstands up to -30V drain-source voltage before breakdown, suitable for 24V rail and battery-backed systems. |
| RDS(on) max | 80mΩ @ VGS = -10V - Enables <0.2W conduction loss at 1.5A, critical for thermally constrained portable designs. |
| ID (continuous) | -4.0A @ TL = +25°C - Supports sustained load currents up to 4A when solder-point temperature is controlled. |
| Qg | 7nC - Low total gate charge reduces driver power and speeds switching transitions in high-frequency DC-DC stages. |
| VGS(th) | -1V to -3V - Ensures reliable turn-on with -4.5V gate drive, compatible with 3.3V/5V microcontroller outputs. |
| trr | 14.6ns - Fast body diode recovery minimizes switching losses in buck converters and reverse-battery protection. |
Pinout & Package
Package: SOT23 - Thermally enhanced plastic surface-mount package with matte tin-plated copper leadframe, moisture sensitivity level 1, and 0.008g mass.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | Main current path from source to load | Connected to high-side switch node or battery input; carries full load current and dissipates conduction loss. |
| G (Gate) | Control terminal for channel modulation | Accepts negative voltage relative to source to enable conduction; requires ≤±20V rating and low capacitance drive. |
| S (Source) | Reference terminal and current return path | Biased at system ground or positive rail; serves as body diode anode and defines VGS reference for turn-on. |
Key Features
| Feature | Design Value |
|---|---|
| 4.5V Gate Drive Capability | Guaranteed RDS(on) ≤140mΩ at VGS = -4.5V, enabling direct interface with 3.3V/5V logic without level-shifting. |
| Thermally Enhanced SOT23 | RθJA = 89°C/W (FR4, t ≤10 sec), delivering 1.4W power dissipation-2.5× higher than standard SOT23 for same board area. |
| Low Qgd / Qgs Ratio | Qgd = 1.3nC, Qgs = 1.2nC - Minimizes Miller effect, improving switching stability in high-dV/dt environments. |
| JEDEC-High Reliability Qualified | Qualified per AEC-Q standards for high-reliability applications, including extended temperature operation (-55°C to +150°C). |
Applications
| Portable Power Switching | Battery Charging Control |
|---|---|
Use Scenario: Load switching in USB-powered handheld devices with Li-ion battery input. IC Role / Device Role / Timing Role: High-side P-channel MOSFET controlling power delivery to system rails during charge/discharge cycles. Use Value: 80mΩ RDS(on) limits voltage drop to <120mV at 1.5A, preserving battery runtime and enabling accurate fuel gauging. |
Use Scenario: Reverse-polarity and overvoltage protection in single-cell Li-ion charger modules. IC Role / Device Role / Timing Role: Input protection switch placed between adapter input and charging IC, blocking fault conditions. Use Value: -30V V(BR)DSS and -4.0A ID rating withstand 28V surge events while maintaining <0.5W loss at 2A charging current. |
| USB OTG Power Path | Industrial Sensor Node Power Gating |
Use Scenario: Bidirectional power path management in USB On-The-Go peripherals requiring host/device role switching. IC Role / Device Role / Timing Role: P-channel switch isolating VBUS from internal 3.3V domain during device mode, enabled by MCU GPIO. Use Value: 14.6ns trr and low Ciss (370pF) ensure clean transitions during role swap without bus glitching or latch-up. |
Use Scenario: Periodic wake-up and shutdown of wireless sensor nodes powered by coin-cell batteries. IC Role / Device Role / Timing Role: Low-leakage power gate enabling <1μA off-state current (IDSS ≤ -1μA), extending shelf life beyond 5 years. Use Value: -1V to -3V VGS(th) ensures consistent turn-on across temperature and battery aging, eliminating false wake-ups. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2305UVT-7 | RDS(on) = 48mΩ @ VGS = -4.5V (lower), but V(BR)DSS = -20V (reduced voltage margin) | Better suited for 12V systems where lower on-resistance outweighs voltage derating needs | Select when operating below 15V and prioritizing conduction efficiency over surge tolerance |
| SI2305DS-T1-E3 | RDS(on) = 120mΩ @ VGS = -4.5V (higher), PD = 0.71W (lower thermal capability) | Lower cost alternative for non-thermally constrained consumer applications | Choose for cost-sensitive designs with ambient temperatures <60°C and peak ID <2A |
Compared with DMG2305UVT-7 and SI2305DS-T1-E3, ZXMP3F30FHTA provides superior voltage margin (-30V), balanced thermal performance (1.4W at TL), and verified JEDEC reliability-making it optimal for industrial portable equipment where long-term stability and surge resilience are mandatory.
Availability
ZXMP3F30FHTA is available at Aetrix Electronics and suitable for portable equipment power management, battery charging control, and USB OTG power path applications requiring stable component supply and long-lifecycle support.
Supply support for ZXMP3F30FHTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
ZXMP3F30FHTA belongs to Diodes' TrenchMOS™ power transistor product line, engineered specifically for high-efficiency, space-constrained DC-DC conversion and load-switching in battery-powered and portable electronics.
FAQ
What is the maximum safe operating junction temperature for ZXMP3F30FHTA?
The device is rated for TJ = -55°C to +150°C. Maximum continuous operation occurs at TJ ≤ +150°C, which corresponds to TL ≤ +25°C with RθJL = 15.7mW/°C and PD = 1.96W. Derating begins above TA = +25°C per RθJA = 89°C/W on FR4 PCB.
Can ZXMP3F30FHTA be used as a high-side switch with 3.3V GPIO control?
Yes-its VGS(th) range of -1V to -3V ensures turn-on with -3.3V gate drive relative to source. When used as a high-side switch, the source connects to VCC, and the GPIO pulls the gate to ground through a series resistor to achieve VGS ≈ -3.3V.
Does ZXMP3F30FHTA include integrated ESD protection?
No-this MOSFET does not integrate on-chip ESD protection structures. External TVS diodes or RC snubbers are recommended on gate and drain lines in environments with >2kV HBM risk, per JEDEC JESD22-A114.
Is ZXMP3F30FHTA compliant with automotive qualification standards?
ZXMP3F30FHTA is JEDEC-qualified for high reliability but is not AEC-Q101 certified. For automotive applications, Diodes offers the pin-compatible ZXMP3F30FHQTA (Q-suffix), qualified to AEC-Q101 and manufactured in IATF 16949 facilities.
ZXMP3F30FHTA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 80mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 370 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 950mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
ZXMP3F30FHTA FAQ
1.How can I place an order for ZXMP3F30FHTA through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXMP3F30FHTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXMP3F30FHTA reliable?
The price and inventory of ZXMP3F30FHTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMP3F30FHTA is usually 5 days.
3.What payment methods are accepted for ZXMP3F30FHTA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMP3F30FHTA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXMP3F30FHTA?
ZXMP3F30FHTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXMP3F30FHTA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXMP3F30FHTA?
For technical support, including ZXMP3F30FHTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMP3F30FHTA requirements.
6.How does Aetrix verify that ZXMP3F30FHTA is sourced from the original manufacturer or authorized distributors?
All ZXMP3F30FHTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMP3F30FHTA meets industry standards.
7.What is the process for return or replacement of ZXMP3F30FHTA?
All ZXMP3F30FHTA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMP3F30FHTA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXMP3F30FHTA part is unused and in its original packaging.
Return procedure for ZXMP3F30FHTA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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