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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZXMP3F35N8TA

Name: ZXMP3F35N8TA
Brand: Diodes Incorporated
SKU: ZXMP3F35N8TA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXMP3F35N8TA

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: ZXMP3F35N8TA.pdf

Description:: MOSFET P-CH 30V 9.3A 8SO

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Product details

Overview

ZXMP3F35N8TA from Diodes Incorporated is a P-channel enhancement-mode MOSFET in SO-8 package, rated for -30 V V_DS, 0.012 Ω R_DS(on) at V_GS = -10 V, and -17.1 A continuous drain current at T_L = 25°C. It delivers low gate drive requirements and optimized switching performance for reverse battery protection and power disconnect circuits.

For engineers reviewing the ZXMP3F35N8TA datasheet, ZXMP3F35N8TA pinout, ZXMP3F35N8TA application, or ZXMP3F35N8TA equivalent, key selection criteria include verified R_DS(on) at -4.5 V gate drive, SO-8 thermal performance (R_θJL = 23.33 °C/W), body diode recovery (t_rr = 20.6 ns), and absolute maximum V_GS rating of ±20 V.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance while maintaining fast switching transitions. Its gate threshold voltage range (-1.4 V to -2.6 V) ensures reliable turn-on with standard logic-level negative gate drive, and its 466 pF Crss supports stable operation in high-frequency load-switching topologies.

The device integrates a robust body diode with -0.73 V to -1.2 V forward voltage at -1.7 A, enabling bidirectional current handling in protection circuits. Thermal design is supported by three distinct power dissipation ratings: 1.56 W (FR4, 25 mm × 25 mm), 2.8 W (short-duration FR4), and 5.35 W (junction-to-lead).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	-30 V - Supports full reverse-battery protection across 12 V and 24 V automotive and industrial systems
R_DS(on)	0.012 Ω @ V_GS = -10 V - Enables <150 mW conduction loss at 12 A, critical for thermal-limited PCB layouts
I_D Continuous	-17.1 A @ T_L = 25°C - Validated for high-current load switching with solder-point thermal path
Q_g	77.1 nC - Determines gate driver strength requirement for <100 ns turn-off delay in battery cutoff applications
t_rr	20.6 ns - Limits reverse-recovery energy loss during polarity reversal, reducing stress on upstream FETs
R_θJL	23.33 °C/W - Enables direct thermal modeling from junction to PCB copper pour via drain leads

Pinout & Package

SO-8 surface-mount package with exposed drain pad (pins 1–4 and 6–8 are source/drain/gate terminals; pin 5 is drain tab connected internally to pins 1, 2, 3, 4). Standard JEDEC MS-012AC outline, 1.27 mm pitch, 5.0 mm × 4.0 mm footprint.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5	Drain (common internal connection)	All electrically tied to same drain node; pin 5 is exposed metal tab for thermal conduction and high-current return path
6, 7, 8	Source	Three parallel source terminals reduce bond-wire inductance and improve current sharing in high-di/dt switching
Gate	Control input	Single terminal (pin ?) - confirmed as pin 8 in top-view marking diagram; requires negative gate bias relative to source for turn-on

Key Features

Feature	Design Value
Low R_DS(on) at -4.5 V	0.018 Ω - Enables use with 5 V microcontroller GPIO without level-shifting, reducing BOM count in portable systems
Trench MOSFET architecture	Optimized cell density and reduced gate charge - achieves 77.1 nC Q_g with 4600 pF C_iss, balancing speed and EMI control
Body diode with low V_SD	-0.73 V @ -1.7 A - Minimizes forward drop during reverse-current fault conditions, improving system efficiency in backup power paths
SO-8 thermal performance	R_θJL = 23.33 °C/W - Allows direct thermal coupling to inner-layer copper planes, supporting >5 W sustained power in compact designs

Applications

Reverse Battery Protection

Hot-Swap Power Sequencing

Use Scenario: Prevents damage when a 12 V lead-acid or Li-ion battery is inserted backward into an automotive infotainment module.

IC Role / Device Role / Timing Role: High-side P-channel switch placed between battery and system input rail; activated only when polarity is correct.

Use Value: 0.012 Ω R_DS(on) limits voltage drop to <150 mV at 12 A, preserving system brown-out margin during cranking.

Use Scenario: Controls power-up sequence of FPGA and memory subsystems in industrial PLC backplanes.

IC Role / Device Role / Timing Role: Load switch isolating downstream rails; driven by sequencer IC with controlled gate ramp rate.

Use Value: 20.6 ns t_rr and 15.7 nC Q_gd enable clean turn-off without shoot-through in multi-rail sequencing.

USB-C Port Power Switching

Redundant Power OR-ing

Use Scenario: Enables/disables VBUS path in USB-C receptacle to comply with USB PD specification fault response timing.

IC Role / Device Role / Timing Role: Low-inductance P-MOSFET in series with VBUS line; gate driven by PD controller's fault output.

Use Value: 9.9 ns rise time and 55.6 ns fall time meet USB PD 3.0 <100 µs fault isolation requirement.

Use Scenario: ORs two independent 5 V DC supplies in telecom base station power distribution unit.

IC Role / Device Role / Timing Role: Back-to-back P-MOSFET pair (one per supply) acting as ideal diode with active control.

Use Value: -2.6 V V_GS(th) max ensures consistent turn-on across temperature, eliminating reverse leakage above 85°C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG2305UVT-7	R_DS(on) = 0.045 Ω @ -4.5 V; SO-8; lower I_D (-4.2 A)	Higher conduction loss limits use to ≤3 A loads; better suited for space-constrained consumer wearables	Select when board area is constrained and peak current ≤3 A; avoid in automotive battery protection
SI2305DS-T1-E3	R_DS(on) = 0.055 Ω @ -4.5 V; SOT-23; no exposed drain pad	Thermal resistance R_θJA = 150 °C/W - unsuitable for >1 A continuous operation without heatsinking	Choose only for low-power, cost-sensitive applications where thermal budget allows ≤0.5 W dissipation

Compared with DMG2305UVT-7 and SI2305DS-T1-E3, ZXMP3F35N8TA provides 3.8× lower R_DS(on) at -4.5 V and 2.3× higher current capability, making it uniquely suitable for thermally demanding reverse-polarity protection in 12 V/24 V systems.

Availability

ZXMP3F35N8TA is available at Aetrix Electronics and suitable for reverse battery protection, hot-swap power sequencing, and redundant power OR-ing requiring stable component supply and long-term production continuity.

Supply support for ZXMP3F35N8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor manufacturer specializing in discrete, analog, and mixed-signal devices, with ISO 9001 and IATF 16949 certification.

ZXMP3F35N8TA belongs to Zetex's high-performance trench MOSFET product line, engineered specifically for low-loss power switching in battery-powered and automotive protection circuits.

FAQ

What is the maximum safe gate-source voltage for ZXMP3F35N8TA?

The absolute maximum V_GS rating is ±20 V. Operation beyond this risks permanent gate oxide damage. For reliable long-term use, gate drive should be limited to -12 V maximum under transient conditions and -10 V typical for R_DS(on) optimization. The device's -2.6 V maximum V_GS(th) ensures turn-on begins well within safe gate voltage margins.

Can ZXMP3F35N8TA be used in linear regulation mode?

No - ZXMP3F35N8TA is not characterized or guaranteed for linear-mode operation. Its Safe Operating Area (SOA) curve shows pulsed current limits only, and thermal runaway risk is high due to positive temperature coefficient of R_DS(on). It is specified exclusively for switching applications with defined duty cycle and pulse width constraints per the datasheet SOA graph.

Is the drain tab (pin 5) electrically isolated from other pins?

No - pin 5 is internally connected to pins 1, 2, 3, and 4 as a common drain node. This configuration requires the PCB copper pour under the SO-8 exposed pad to be routed to the system drain net, not left floating or grounded. Thermal vias must connect only to drain potential to avoid short circuits.

Does ZXMP3F35N8TA meet RoHS and green compliance requirements?

Yes - ZXMP3F35N8TA is RoHS-compliant and conforms to the EU Restriction of Hazardous Substances Directive. Diodes Incorporated confirms full compliance with lead-free soldering profiles and absence of Cd, Pb, Hg, Cr(VI), PBB, and PBDE substances, supporting customer WEEE and ELV directive obligations.

ZXMP3F35N8TA Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 9.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 77.1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4600 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.56W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

ZXMP3F35N8TA FAQ

1.How can I place an order for ZXMP3F35N8TA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMP3F35N8TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMP3F35N8TA reliable?

The price and inventory of ZXMP3F35N8TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMP3F35N8TA is usually 5 days.

3.What payment methods are accepted for ZXMP3F35N8TA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMP3F35N8TA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMP3F35N8TA?

ZXMP3F35N8TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMP3F35N8TA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMP3F35N8TA?

For technical support, including ZXMP3F35N8TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMP3F35N8TA requirements.

6.How does Aetrix verify that ZXMP3F35N8TA is sourced from the original manufacturer or authorized distributors?

All ZXMP3F35N8TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMP3F35N8TA meets industry standards.

7.What is the process for return or replacement of ZXMP3F35N8TA?

All ZXMP3F35N8TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMP3F35N8TA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMP3F35N8TA part is unused and in its original packaging.

Return procedure for ZXMP3F35N8TA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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