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Diodes Incorporated ZXMP3F36N8TA
- Part No.:
- ZXMP3F36N8TA
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
ZXMP3F36N8TA.pdf
- Description:
- MOSFET P-CH 30V 7.2A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,249
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Product details
Overview
ZXMP3F36N8TA from Diodes Incorporated is a P-channel enhancement-mode Trench MOSFET in SO-8 package, rated for -30 V V(BR)DSS, 0.020 Ω RDS(on) at VGS = -10 V, and -12.6 A continuous drain current. It serves as a high-efficiency power switch in battery protection circuits, delivering low conduction loss and fast switching with 3.1 ns turn-on delay and 75 ns turn-off delay.
For engineers reviewing the ZXMP3F36N8TA datasheet, ZXMP3F36N8TA pinout, ZXMP3F36N8TA application, or ZXMP3F36N8TA equivalent, key selection criteria include verified RDS(on) at -4.5 V (-0.028 Ω), SO-8 thermal performance (RθJA = 45 °C/W on FR4), body diode recovery (trr = 17.7 ns), and gate charge (Qg = 43.9 nC) for synchronous buck or load-switch designs.
Technical Context
This MOSFET employs Zetex's Trench process to simultaneously minimize RDS(on) and optimize switching speed-evidenced by low Crss (266 pF) and fast tr/tf (5 ns / 40 ns). Its negative VGS(th) range (-1.3 V to -2.5 V) ensures reliable turn-on with standard logic-level gate drivers.
The device features an integrated body diode with VSD = -0.73 V at -1.7 A and Qrr = 11.7 nC, enabling efficient reverse-current handling in bidirectional power paths. Thermal design leverages SO-8 lead-frame construction with RθJL = 26.4 °C/W for solder-point cooling in high-power-density layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | -30 V - Maximum blocking voltage before avalanche; supports 24 V system rails with margin |
| RDS(on) | 0.020 Ω @ VGS = -10 V - Enables <0.3 W conduction loss at -10 A, critical for thermal-limited battery disconnect |
| ID (cont) | -12.6 A @ TL = 25°C - Sustains full load in compact SO-8 without external heatsink under PCB lead cooling |
| Qg | 43.9 nC - Determines gate drive power and switching loss in PWM applications above 100 kHz |
| trr | 17.7 ns - Limits reverse-recovery energy in synchronous rectification, reducing shoot-through risk |
| VGS(th) | -1.3 to -2.5 V - Ensures turn-on with 3.3 V or 5 V microcontroller GPIOs without level-shifting |
| Ciss | 2265 pF - Sets input capacitance-driven gate drive timing; impacts Miller plateau duration |
Pinout & Package
SO-8 surface-mount package (JEDEC MS-012AC), 4.8–5.0 mm width, 3.8–4.0 mm length, 1.35–1.75 mm height, with exposed drain paddle for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5 | Drain (D) | Common high-current output node; electrically and thermally tied to exposed paddle |
| 6 | Gate (G) | Control terminal; requires <43.9 nC charge for full enhancement; sensitive to ESD |
| 7, 8 | Source (S) | Return path for load current; referenced to system ground in high-side switch configurations |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at -4.5 V | 0.028 Ω - Enables direct drive from 5 V logic in battery disconnect switches without gate boosting |
| Trench MOSFET architecture | Reduces cell pitch and channel resistance while maintaining >10⁶ cycle reliability under repetitive pulsed stress |
| Fast switching with low Crss | 266 pF reverse transfer capacitance - minimizes Miller-induced gate oscillation during dV/dt transitions |
| Robust body diode | trr = 17.7 ns, Qrr = 11.7 nC - Supports bidirectional current flow in USB-C PD and smart battery systems |
Applications
| Battery Protection Circuit | Load Switch for Portable Devices |
|---|---|
Use Scenario: Overvoltage/overcurrent cutoff in Li-ion battery packs with dual-MOSFET protection ICs. IC Role / Device Role / Timing Role: High-side P-channel switch controlled by protection ASIC; responds within microseconds to fault signals. Use Value: 0.020 Ω RDS(on) limits voltage drop to <200 mV at 10 A, preserving pack voltage accuracy during protection events. | Use Scenario: Controlled power-up of PMIC rails or peripheral modules in smartphones and wearables. IC Role / Device Role / Timing Role: Load switch enabling soft-start via gate ramping; integrates body diode for reverse-current blocking. Use Value: 43.9 nC Qg allows precise slew-rate control using 10 kΩ gate resistor, eliminating inrush spikes >1 A. |
| Hot-Swap Controller Interface | USB Power Delivery Switch |
Use Scenario: Inrush limiting and fault isolation in industrial backplane slots with hot-plug capability. IC Role / Device Role / Timing Role: Main pass element driven by dedicated hot-swap controller; handles -12.6 A continuous load. Use Value: RθJL = 26.4 °C/W enables 4.7 W dissipation at solder point, supporting 500 ms surge without thermal shutdown. | Use Scenario: Bidirectional power path management in USB-C DRP (dual-role port) implementations. IC Role / Device Role / Timing Role: Reverse-blocking switch in VCONN or VBUS path; body diode conducts only during cable insertion transient. Use Value: 17.7 ns trr and -0.73 V VSD ensure <100 ns dead-time compliance and <50 mW conduction loss at 2 A. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SI3457DV-T1-GE3 | RDS(on) = 0.022 Ω @ -10 V; SO-8; Qg = 32 nC; V(BR)DSS = -30 V | Lower gate charge reduces drive loss but lacks specified trr or Qrr data | Preferred where gate drive efficiency > reverse recovery precision |
| DMG3415L-7 | RDS(on) = 0.025 Ω @ -4.5 V; SOT-23-6; ID = -4.5 A; V(BR)DSS = -20 V | Smaller package and lower voltage rating limit use to sub-12 V systems | Selected for space-constrained, low-power portable designs only |
Compared with SI3457DV-T1-GE3 and DMG3415L-7, ZXMP3F36N8TA uniquely balances SO-8 thermal capability (4.7 W at TL), fully characterized reverse recovery (trr/Qrr), and -30 V rating-making it optimal for 24 V battery protection and industrial hot-swap where reliability under pulsed overload is mandatory.
Availability
ZXMP3F36N8TA is available at Aetrix Electronics and suitable for battery protection, load switching, hot-swap interface, and USB-C power delivery applications requiring stable component supply and long-term lifecycle support.
Supply support for ZXMP3F36N8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor manufacturer specializing in discrete, analog, and mixed-signal devices, ISO 9001 and IATF 16949 certified, with design centers across Asia, Europe, and the Americas.
ZXMP3F36N8TA belongs to Zetex's TrenchMOS® power management portfolio, engineered specifically for high-efficiency, low-voltage P-channel switching in portable and industrial power systems where RDS(on) stability over temperature and fast switching are critical.
FAQ
What is the maximum safe operating junction temperature for ZXMP3F36N8TA?
The absolute maximum junction temperature is 150 °C per the datasheet. Operation up to this limit is permitted when thermal design ensures actual Tj remains ≤150 °C under worst-case ambient and power dissipation conditions. Derating begins at 25 °C ambient, with linear reduction of PD by 22.2 mW/°C for PCB-mounted operation.
Can ZXMP3F36N8TA be used in a high-side switch configuration with 3.3 V GPIO control?
Yes-its VGS(th) range (-1.3 V to -2.5 V) guarantees turn-on with 3.3 V logic. However, RDS(on) rises to 0.028 Ω at VGS = -4.5 V, increasing conduction loss by ~40% versus -10 V drive. For minimal loss, use a gate driver or level shifter to deliver ≥-8 V.
Does ZXMP3F36N8TA have avalanche rating or UIS capability?
No avalanche rating is specified in the datasheet. The device is not characterized for Unclamped Inductive Switching (UIS) events. For inductive load switching, external clamping (e.g., TVS or RCD snubber) is required to prevent breakdown during turn-off transients exceeding -30 V.
Is the SO-8 package lead-free and RoHS compliant?
Yes-ZXMP3F36N8TA is RoHS compliant and green-compliant per Diodes Incorporated's environmental policy. The SO-8 package uses matte tin lead finish, Pb-free solder compatible, and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life at ≤30 °C/60% RH.
ZXMP3F36N8TA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 43.9 nC @ 15 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2265 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.56W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
ZXMP3F36N8TA FAQ
1.How can I place an order for ZXMP3F36N8TA through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXMP3F36N8TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXMP3F36N8TA reliable?
The price and inventory of ZXMP3F36N8TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMP3F36N8TA is usually 5 days.
3.What payment methods are accepted for ZXMP3F36N8TA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMP3F36N8TA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXMP3F36N8TA?
ZXMP3F36N8TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXMP3F36N8TA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXMP3F36N8TA?
For technical support, including ZXMP3F36N8TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMP3F36N8TA requirements.
6.How does Aetrix verify that ZXMP3F36N8TA is sourced from the original manufacturer or authorized distributors?
All ZXMP3F36N8TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMP3F36N8TA meets industry standards.
7.What is the process for return or replacement of ZXMP3F36N8TA?
All ZXMP3F36N8TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMP3F36N8TA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXMP3F36N8TA part is unused and in its original packaging.
Return procedure for ZXMP3F36N8TA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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