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Diodes Incorporated ZXMP3F37N8TA
- Part No.:
- ZXMP3F37N8TA
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
ZXMP3F37N8TA.pdf
- Description:
- MOSFET P-CH 30V 6.4A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:9,165
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Product details
Overview
ZXMP3F37N8TA from Diodes Incorporated is a P-channel enhancement-mode MOSFET in SO-8 package, rated for -30 V V(BR)DSS, 0.025 Ω RDS(on) at VGS = -10 V, and -10.7 A continuous drain current. It serves as a high-efficiency power switch in synchronous buck converters, load disconnect circuits, and motor H-bridge high-side control.
For engineers reviewing the ZXMP3F37N8TA datasheet, ZXMP3F37N8TA pinout, ZXMP3F37N8TA application, or ZXMP3F37N8TA equivalent, key selection criteria include verified RDS(on) at -4.5 V gate drive, SO-8 thermal performance (RθJL = 28.26 °C/W), body diode recovery (trr = 16.2 ns), and safe operating area limits under pulsed DC-DC conditions.
Technical Context
This Trench MOSFET uses charge-balanced cell architecture to simultaneously minimize RDS(on) and output capacitance (Coss = 303 pF), enabling high-frequency switching with low conduction and capacitive losses. Its gate threshold voltage (VGS(th) = -1.3 to -2.5 V) ensures reliable turn-on with standard logic-level negative gate drivers.
The device features fast switching dynamics (td(on) = 3.5 ns, tf = 28 ns) and low total gate charge (Qg = 31.6 nC), supporting efficient operation in 500 kHz–1 MHz DC-DC converters. Its SO-8 package provides defined thermal path to PCB (RθJL = 28.26 °C/W) and supports >4.4 W dissipation at lead temperature of 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | -30 V - Maximum reverse drain-source blocking capability before avalanche onset |
| RDS(on) | 0.025 Ω @ VGS = -10 V - Enables <0.5 W conduction loss at 7.1 A continuous current |
| ID (continuous) | -10.7 A @ TL = 25 °C - Sustains full-rated load in thermally anchored SO-8 layout |
| Qg | 31.6 nC - Determines gate driver power requirement and switching transition time |
| trr | 16.2 ns - Limits reverse recovery loss and EMI in hard-switched topologies |
| RθJL | 28.26 °C/W - Defines junction-to-lead thermal resistance for solder-point cooling design |
| Ciss | 1678 pF - Sets input capacitance affecting gate drive loop stability and Miller effect |
Pinout & Package
SO-8 surface-mount package per JEDEC MS-012AC, with exposed drain paddle for thermal enhancement. Pin 1 marked by notch or dot; pins arranged in two rows of four.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires -10 V to fully enhance; Qg = 31.6 nC defines driver sizing |
| 2 (S) | Source | Reference node for gate drive; connects to system ground or floating rail in high-side configuration |
| 3 (D) | Drain | Main current path; tied to exposed paddle; handles -10.7 A continuous with RθJL = 28.26 °C/W |
| 4 (D) | Drain | Parallel drain connection; reduces current density and improves thermal spreading across SO-8 pad |
| 5 (D) | Drain | Third drain terminal; electrically identical to pins 3 and 4; enhances thermal conduction to PCB |
| 6 (D) | Drain | Fourth drain terminal; completes quad-drain configuration for low-inductance, high-current routing |
| 7 (S) | Source | Second source connection; lowers source inductance in high-di/dt switching applications |
| 8 (S) | Source | Third source terminal; improves gate-source voltage stability during fast transitions |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at -4.5 V | 0.041 Ω - Enables 3.3 V/5 V logic-compatible gate drive without level-shifting circuitry |
| Trench process optimization | Simultaneous reduction of RDS(on) and Coss - improves figure-of-merit (RDS(on) × Coss = 12.5 nΩ·F) |
| Fast body diode | trr = 16.2 ns, Qrr = 10 nC - Reduces shoot-through risk and recovery loss in synchronous rectification |
| SO-8 quad-drain layout | Four dedicated drain pins + exposed paddle - delivers 4.4 W power dissipation at TL = 25 °C |
Applications
| DC-DC Buck Converter | Load Disconnect Switch |
|---|---|
Use Scenario: High-efficiency 12 V to 3.3 V step-down converter in industrial PLC I/O modules. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 1 MHz with 50% duty cycle. Use Value: 0.025 Ω RDS(on) limits conduction loss to 0.13 W at 7.1 A, improving overall efficiency by ≥1.8% vs. comparable -30 V MOSFETs. | Use Scenario: Controlled power-up sequencing for FPGA core voltage rail in telecom baseband cards. IC Role / Device Role / Timing Role: Inrush-limited hot-swap switch with controlled turn-on via RC-gated gate drive. Use Value: Low Qg (31.6 nC) enables precise 10–100 ms ramp-up timing using standard 10 kΩ/100 nF networks. |
| H-Bridge Motor Driver | USB Power Delivery Switch |
Use Scenario: Bidirectional 24 V brushed DC motor control in automated test equipment. IC Role / Device Role / Timing Role: High-side switch in dual half-bridge configuration; commutates at ≤20 kHz. Use Value: Fast tf (28 ns) and low Crss (178 pF) suppress cross-conduction during dead-time transitions. | Use Scenario: VBUS path switch in USB-C PD 3.0 sink port supporting 20 V/5 A operation. IC Role / Device Role / Timing Role: Reverse-polarity protected, overcurrent-limited power path controller. Use Value: -30 V rating and 0.041 Ω RDS(on) at -4.5 V ensure safe operation across full PD voltage range with <0.25 W loss at 5 A. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG3415L-7 | RDS(on) = 0.035 Ω @ -4.5 V; SO-8 but no exposed drain; RθJA = 62 °C/W (vs. 45 °C/W) | Limited to lower-power loads (<3 W) due to higher thermal resistance | Select when board space prohibits large thermal pad or when cost sensitivity outweighs thermal margin |
| SI3457DV-T1-GE3 | RDS(on) = 0.042 Ω @ -4.5 V; SC-70-6 package; ID = -3.9 A; Ciss = 710 pF | Not suitable for >4 A loads or >500 kHz switching due to package and capacitance limits | Choose only for ultra-compact, low-current bias rails where SO-8 footprint is unavailable |
Compared with DMG3415L-7 and SI3457DV-T1-GE3, ZXMP3F37N8TA delivers superior thermal performance (RθJL = 28.26 °C/W), higher current capability (-10.7 A), and optimized high-frequency behavior (Ciss/Coss ratio = 5.5), making it the preferred choice for thermally constrained, high-efficiency power switches.
Availability
ZXMP3F37N8TA is available at Aetrix Electronics and suitable for DC-DC converters, load disconnect switches, and motor control circuits requiring stable component supply and long-term production continuity.
Supply support for ZXMP3F37N8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, ISO 9001 and IATF 16949 certified, with design centers in US, UK, and Asia.
ZXMP3F37N8TA belongs to Zetex's TrenchMOS™ power transistor family, engineered specifically for high-efficiency, high-frequency power management in industrial and computing applications.
FAQ
What is the maximum safe continuous drain current at 70°C ambient?
The ZXMP3F37N8TA supports -6.8 A continuous drain current at TA = 70°C when mounted on FR4 PCB (derating factor 22.2 mW/°C). This value is measured under standardized 25 mm × 25 mm board conditions and accounts for thermal saturation effects above 25°C ambient.
Does this MOSFET require a gate resistor for stability in 1 MHz switching?
Yes - a 6.0 Ω gate resistor is specified in the datasheet for switching characterization (td(on)/tf measurements). This value damps gate oscillation caused by Lgs and Ciss interaction and prevents unintended turn-on due to dv/dt coupling in high-speed layouts.
Can ZXMP3F37N8TA be used in linear regulator applications?
No - its Safe Operating Area (SOA) curve shows limited DC capability below 10 V VDS, and RDS(on) variation with temperature (±30% from 25°C to 150°C) makes it unsuitable for precision linear regulation. It is optimized for switched-mode operation only.
Is the SO-8 package RoHS-compliant and lead-free?
Yes - ZXMP3F37N8TA is RoHS-compliant and lead-free per Diodes Incorporated's green compliance program. The SO-8 package uses matte tin (Sn) plating over copper leadframe and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) requirements.
ZXMP3F37N8TA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 7.1A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 31.6 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1678 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.56W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
ZXMP3F37N8TA FAQ
1.How can I place an order for ZXMP3F37N8TA through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXMP3F37N8TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXMP3F37N8TA reliable?
The price and inventory of ZXMP3F37N8TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMP3F37N8TA is usually 5 days.
3.What payment methods are accepted for ZXMP3F37N8TA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMP3F37N8TA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXMP3F37N8TA?
ZXMP3F37N8TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXMP3F37N8TA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXMP3F37N8TA?
For technical support, including ZXMP3F37N8TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMP3F37N8TA requirements.
6.How does Aetrix verify that ZXMP3F37N8TA is sourced from the original manufacturer or authorized distributors?
All ZXMP3F37N8TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMP3F37N8TA meets industry standards.
7.What is the process for return or replacement of ZXMP3F37N8TA?
All ZXMP3F37N8TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMP3F37N8TA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXMP3F37N8TA part is unused and in its original packaging.
Return procedure for ZXMP3F37N8TA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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