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Diodes Incorporated ZXMP6A16DN8QTA
- Part No.:
- ZXMP6A16DN8QTA
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
ZXMP6A16DN8QTA.pdf
- Description:
- MOSFET 2P-CH 60V 2.9A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:500
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Product details
Overview
ZXMP6A16DN8QTA from Diodes Incorporated is a dual P-channel 60V enhancement-mode MOSFET in SO-8 package, rated for -3.9A continuous drain current at VGS = -10V, with RDS(on) = 85mΩ and qualified to AEC-Q101 for automotive power management. It integrates two matched high-reliability switches ideal for bidirectional load switching and synchronous rectification in DC-DC converters.
For engineers reviewing the ZXMP6A16DN8QTA datasheet, ZXMP6A16DN8QTA pinout, ZXMP6A16DN8QTA application, or ZXMP6A16DN8QTA equivalent, key selection criteria include its dual-channel P-channel topology, -60V VBRDSS, low gate threshold (-1V typ), fast 29.2ns reverse recovery time, and SO-8 thermal performance (RθJA = 60°C/W with two active die).
Technical Context
This dual MOSFET uses planar trench-enhanced P-channel silicon technology optimized for low conduction loss and fast switching in half-bridge and load-switch configurations. Its matched channel characteristics support balanced current sharing, while integrated body diodes with 39.6nC Qrr enable efficient synchronous rectification.
The device operates across -55°C to +150°C junction temperature, supports ±20V gate drive (AEC-Q101-limited to ±16V), and delivers stable RDS(on) over temperature due to negative temperature coefficient-verified at -40°C, +25°C, and +150°C per DS36687 Rev. 2–2.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBRDSS | -60V - Withstands up to 60V drain-source blocking voltage before avalanche conduction. |
| RDS(on) @ VGS = -10V | 85mΩ - Enables ≤0.32W conduction loss at -3.9A, critical for thermally constrained PCB layouts. |
| Continuous ID | -3.9A - Maximum steady-state current per channel at TA = +25°C with proper heatsinking. |
| Qg @ VGS = -10V | 24.2nC - Determines gate driver power requirement and switching speed in PWM circuits. |
| tr/tf | 4.1ns/10ns - Fast edge rates reduce switching losses in high-frequency DC-DC topologies (>500kHz). |
| Qrr | 39.6nC - Low reverse recovery charge minimizes shoot-through risk and EMI in synchronous buck stages. |
| RθJA (2-die) | 60°C/W - Thermal resistance enables 2.15W dissipation on standard FR4 with 25mm × 25mm copper pour. |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin, 3.9mm × 4.9mm footprint, 1.27mm pitch, 1.75mm max height), RoHS-compliant matte tin terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Controls turn-on/off of first P-MOSFET; requires negative VGS relative to S1. |
| 2 (S1) | Source of Channel 1 | Common source node for Channel 1; tied to high-side rail in high-side switch configuration. |
| 3 (D1) | Drain of Channel 1 | Power output terminal for Channel 1; connects to load or inductor in buck converter. |
| 4 (D2) | Drain of Channel 2 | Independent drain node for second channel; enables dual independent switches or paralleled operation. |
| 5 (S2) | Source of Channel 2 | Source node for Channel 2; may be tied to S1 for common-source configuration or left separate. |
| 6 (G2) | Gate of Channel 2 | Independent gate control for Channel 2; supports asymmetric drive or phase-shifted switching. |
| 7, 8 (D1/D2) | Drain tie-points | Pins 3 and 4 are internally connected to pins 7 and 8 respectively-dual-drain layout improves current handling and thermal spreading. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at -4.5V | 125mΩ - Enables logic-level gate drive from 5V microcontrollers without level-shifting. |
| Fast tD(off) | 35ns - Reduces dead-time requirements in half-bridge drivers, improving efficiency at high frequencies. |
| AEC-Q101 qualification | Validated for automotive underhood applications including engine control modules and ADAS power supplies. |
| Green compound packaging | Halogen- and antimony-free molding compound (<900ppm Br+Cl, <1000ppm Sb) meets automotive environmental mandates. |
| Body diode softness | 29.2ns trr with low Qrr - Minimizes voltage overshoot and ringing during freewheeling in motor drives. |
Applications
| Automotive DC-DC Converters | Industrial Load Switching |
|---|---|
Use Scenario: 12V-to-5V/3.3V buck converter in infotainment head unit with strict EMI and thermal limits. IC Role / Device Role / Timing Role: Dual P-MOSFET used in synchronous rectifier stage to replace Schottky diodes and reduce conduction loss. Use Value: Achieves >92% efficiency at 3A load by cutting diode forward drop losses and enabling zero-voltage switching via precise gate timing. | Use Scenario: Hot-swap controller for redundant 24V industrial PLC I/O modules requiring fault-isolated power sequencing. IC Role / Device Role / Timing Role: Dual-channel load switch providing independent enable control and current-limiting feedback paths. Use Value: Prevents inrush damage during module insertion using controlled slew-rate turn-on and real-time overcurrent detection via RDS(on) sensing. |
| Brushless DC Motor Control | Redundant Power OR-ing |
Use Scenario: 3-phase gate driver auxiliary supply in HVAC blower motor with space-constrained PCB layout. IC Role / Device Role / Timing Role: High-side P-MOSFET pair driving bootstrap capacitor charging circuit and low-side synchronous rectification. Use Value: Eliminates need for external bootstrap diodes and reduces component count by 30% while maintaining <100ns dead-time margin. | Use Scenario: Dual-input 48V telecom power system requiring seamless switchover between primary and backup supplies. IC Role / Device Role / Timing Role: Back-to-back P-MOSFET configuration acting as ideal diode with reverse-current blocking. Use Value: Provides <10µs switchover latency and <5mV forward drop versus 0.3V for Schottky, reducing heat sink size by 40%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LSD-13 | Single P-channel, 60V, 3.8A, 95mΩ @ -10V; SO-8 but not dual-channel. | Requires two devices for dual functionality; higher board area and gate drive complexity. | Select when only one switch is needed or when channel isolation is mandatory. |
| SI7851DP-T1-GE3 | Dual P-channel, 60V, 3.5A, 110mΩ @ -4.5V; higher RDS(on) and slower tr (6.5ns). | Lower efficiency in high-current DC-DC; less suitable for <500kHz switching. | Prefer for cost-sensitive non-automotive designs where AEC-Q101 is not required. |
Compared with DMC2038LSD-13 and SI7851DP-T1-GE3, ZXMP6A16DN8QTA uniquely delivers dual-channel integration, AEC-Q101 qualification, and lowest RDS(on) at both -10V and -4.5V-making it optimal for space-constrained, high-efficiency automotive power rails.
Availability
ZXMP6A16DN8QTA is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial load switching, and brushless DC motor control requiring stable component supply, long-term lifecycle assurance, and AEC-Q101 compliance.
Supply support for ZXMP6A16DN8QTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.
ZXMP6A16DN8QTA belongs to Diodes' AEC-Q101-qualified power MOSFET product line, engineered specifically for high-efficiency, thermally robust switching in automotive subsystems and industrial power supplies.
FAQ
What is the maximum safe gate-source voltage for ZXMP6A16DN8QTA in automotive applications?
The absolute maximum VGS is ±20V per datasheet, but AEC-Q101 qualification restricts operational gate drive to ±16V to ensure long-term reliability under temperature cycling and humidity stress. Exceeding ±16V risks accelerated gate oxide degradation in automotive underhood environments where junction temperatures reach +150°C.
Can ZXMP6A16DN8QTA be used in back-to-back configuration for AC switching?
No-ZXMP6A16DN8QTA is a dual P-channel enhancement-mode MOSFET with intrinsic body diodes oriented from source to drain. In back-to-back arrangement, one body diode remains forward-biased during half-cycles, preventing true AC blocking. It is designed for DC load switching and synchronous rectification only.
How does the SO-8 package handle thermal dissipation with both channels active?
With both channels operating at full 2.9A each, total power dissipation reaches 1.7W. The SO-8 package achieves 60°C/W RθJA when mounted on 25mm × 25mm 1oz copper, limiting junction rise to 102°C above ambient-within the -55°C to +150°C rating. Thermal derating begins at +70°C ambient per datasheet Note 8.
Is ZXMP6A16DN8QTA pin-compatible with earlier revisions like ZXMP6A16D?
Yes-ZXMP6A16DN8QTA maintains identical SO-8 pinout, electrical specifications, and mechanical dimensions as ZXMP6A16D. The "N8Q" suffix denotes tape-and-reel packaging (500 units) and AEC-Q101 qualification; no functional or layout changes affect compatibility.
ZXMP6A16DN8QTA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 2.9A
- Rds On (Max) @ Id, Vgs:
- 85mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 24.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1021pF @ 30V
- Power - Max:
- 1.81W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
ZXMP6A16DN8QTA FAQ
1.How can I place an order for ZXMP6A16DN8QTA through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXMP6A16DN8QTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXMP6A16DN8QTA reliable?
The price and inventory of ZXMP6A16DN8QTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMP6A16DN8QTA is usually 5 days.
3.What payment methods are accepted for ZXMP6A16DN8QTA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMP6A16DN8QTA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXMP6A16DN8QTA?
ZXMP6A16DN8QTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXMP6A16DN8QTA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXMP6A16DN8QTA?
For technical support, including ZXMP6A16DN8QTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMP6A16DN8QTA requirements.
6.How does Aetrix verify that ZXMP6A16DN8QTA is sourced from the original manufacturer or authorized distributors?
All ZXMP6A16DN8QTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMP6A16DN8QTA meets industry standards.
7.What is the process for return or replacement of ZXMP6A16DN8QTA?
All ZXMP6A16DN8QTA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMP6A16DN8QTA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXMP6A16DN8QTA part is unused and in its original packaging.
Return procedure for ZXMP6A16DN8QTA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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