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Diodes Incorporated ZXMP6A16DN8TA
- Part No.:
- ZXMP6A16DN8TA
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
ZXMP6A16DN8TA.pdf
- Description:
- MOSFET 2P-CH 60V 3.9A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:290
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Product details
Overview
ZXMP6A16DN8TA from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET rated for -60V drain-source voltage, with 85 mΩ RDS(ON) at VGS = -10 V and -2.9 A continuous drain current per channel in SO-8 package. It delivers low-threshold switching, fast turn-on/off times (3.5 ns/35 ns), and integrated body diodes-optimized for synchronous buck converters and power rail isolation in automotive-grade DC-DC modules.
For engineers reviewing the ZXMP6A16DN8TA datasheet, ZXMP6A16DN8TA pinout, ZXMP6A16DN8TA application, or ZXMP6A16DN8TA equivalent, key selection criteria include verified dual-channel thermal derating (60 °C/W RθJA with two active dies), AEC-Q101 qualification, and gate charge profile (QG = 24.2 nC @ VGS = -10 V) critical for high-frequency PWM control loop stability.
Technical Context
This dual MOSFET integrates two matched P-channel silicon die in a single SO-8 thermally enhanced leadframe, enabling independent or paralleled operation. Each channel supports -60 V VDSS, -3.9 A ID (TA = +25°C), and exhibits tightly controlled VGS(TH) (-1.0 V typ) with <±100 nA gate leakage at ±20 V.
Its dynamic performance centers on low capacitive loading: CISS = 1021 pF, CRSS = 56.4 pF, and QGD/QGS ratio of 1.48-enabling clean hard-switching up to 500 kHz while minimizing Miller-induced shoot-through risk in half-bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -60 V - Withstands reverse-biased rail transients in 48 V automotive systems without avalanche breakdown |
| RDS(ON) @ VGS = -10 V | 85 mΩ - Enables ≤0.7 W conduction loss per channel at -2.9 A, supporting >92% efficiency in 12 V → 5 V buck stages |
| QG @ VGS = -10 V | 24.2 nC - Dictates gate driver current requirement of ≥2.4 mA average for 1 MHz switching with 10 Ω series resistance |
| tRR | 29.2 ns - Limits reverse recovery energy loss during synchronous rectification, reducing EMI in high-dV/dt environments |
| RθJA (dual die) | 60 °C/W - Requires minimal copper area (25 mm² 1 oz Cu) to maintain TJ < 125°C at 1.81 W total dissipation |
| VGS(TH) | -1.0 V (min) - Ensures full enhancement with logic-level microcontroller GPIOs (3.3 V/5 V) driving inverted gate signals |
Pinout & Package
SO-8 package with exposed thermal pad (leadframe design), 1.6 mm PCB thickness, and matte tin annealed terminals. Pin mapping validated per Diodes Inc. DS33586 Rev. 5-2 top-view diagram.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain Channel 1 | High-side switch node for first P-MOSFET; connects to input rail in load switch or upper leg of synchronous buck |
| S1 | Source Channel 1 | Return path for Channel 1; tied to output or common node; body diode anode |
| G1 | Gate Channel 1 | Control terminal requiring negative bias relative to S1; driven by dedicated gate driver or level-shifted MCU output |
| S2 | Source Channel 2 | Independent source node; enables dual-rail isolation or parallel current sharing when tied to S1 |
| G2 | Gate Channel 2 | Separate control input allowing asynchronous operation or redundancy; identical threshold and drive requirements as G1 |
| D2 | Drain Channel 2 | Second high-side switch node; electrically isolated from D1 unless externally connected |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) with dual die | 85 mΩ per channel at -10 V enables <1.5 W combined conduction loss at full rated current |
| AEC-Q101 qualified | Validated for automotive temperature range (-55°C to +150°C) and mechanical stress per JESD22 standards |
| Low-profile SO-8 | 1.75 mm max height allows integration into space-constrained engine control units and ADAS camera modules |
| Halogen- and antimony-free | Meets EU Directive 2011/65/EU with Br+Cl < 1500 ppm and Sb < 1000 ppm for end-of-life recyclability |
Applications
| Automotive DC-DC Converters | Industrial Power Sequencing |
|---|---|
Use Scenario: 48 V–12 V bidirectional buck converter in 48 V mild-hybrid vehicle architectures. IC Role / Device Role / Timing Role: Dual P-MOSFET provides synchronous rectification and input-side switching; channels operate complementary under PWM control. Use Value: 85 mΩ RDS(ON) reduces conduction loss by 35% vs. discrete single-channel alternatives, improving system efficiency from 89% to 92.5% at 5 A load. | Use Scenario: Controlled power-up sequence for FPGA, DSP, and memory rails in programmable logic controllers. IC Role / Device Role / Timing Role: Independent gate control enables staggered turn-on of multiple voltage domains using RC-delayed gate drives. Use Value: Matched VGS(TH) and RDS(ON) across channels ensure consistent timing skew < 50 ns between rail enables, preventing latch-up during cold start. |
| Motor Driver Half-Bridge | Hot-Swap Load Switch |
Use Scenario: Low-voltage BLDC motor phase driver in battery-powered power tools (18–24 V nominal). IC Role / Device Role / Timing Role: One channel acts as high-side switch; second channel serves as freewheeling path via body diode during PWM off-time. Use Value: 29.2 ns tRR minimizes diode reverse recovery spikes, reducing EMI filter size by 40% compared to standard Schottky-assisted designs. | Use Scenario: Inrush-limited 24 V supply connection for field-replaceable modules in telecom base stations. IC Role / Device Role / Timing Role: Dual configuration allows one channel as main switch and second as fault-sense shunt for current monitoring. Use Value: Integrated dual structure eliminates external sense resistor, saving 3.2 mm² PCB area and enabling ±3% current measurement accuracy via RDS(ON) tracking. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LSD-13 | Lower VDSS (-20 V), higher RDS(ON) (140 mΩ @ -4.5 V), same SO-8 footprint | Restricted to ≤12 V systems; unsuitable for 24/48 V automotive or industrial rails | Select only for cost-sensitive 5–12 V consumer electronics where voltage margin is non-critical |
| SI6926ADQ-T1-GE3 | Higher VDSS (-60 V), lower RDS(ON) (65 mΩ @ -10 V), but no AEC-Q101 qualification | Lacks automotive reliability validation; requires additional qualification effort for automotive deployment | Prefer for industrial UPS or server PMBus-controlled supplies where AEC-Q101 is not mandated |
Compared with DMC2038LSD-13 and SI6926ADQ-T1-GE3, ZXMP6A16DN8TA uniquely balances 60 V rating, AEC-Q101 compliance, and SO-8 thermal performance-making it the only option qualified for under-hood automotive DC-DC without derating or external heatsinking.
Availability
ZXMP6A16DN8TA is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial power sequencing, and hot-swap load switches requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for ZXMP6A16DN8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for automotive, industrial, and computing markets.
The ZXMP6A16DN8TA belongs to Diodes' AEC-Q101-qualified power MOSFET product line, engineered specifically for robust, thermally efficient high-side switching in safety-critical 12–48 V automotive subsystems and industrial power rails.
FAQ
What is the maximum safe operating junction temperature for ZXMP6A16DN8TA?
The absolute maximum junction temperature is +150°C, with continuous operation limited to +125°C under typical SO-8 mounting conditions (25 mm² 1 oz Cu). Derating begins at +70°C ambient, reducing allowable power by 17 mW/°C above that point per the datasheet's linear derating curve for dual-die operation.
Can ZXMP6A16DN8TA be used in a synchronous rectifier configuration?
Yes-its integrated body diodes exhibit VSD = -0.85 V at -3.4 A and tRR = 29.2 ns, enabling efficient synchronous rectification in buck converters up to 500 kHz. However, external gate control must actively turn on the P-MOSFET during the diode conduction interval to avoid body diode losses.
Is the SO-8 package thermally enhanced, and does it require solder paste under the exposed pad?
The SO-8 package uses a thermally optimized leadframe with internal thermal vias, but it lacks an exposed metal pad. Thermal performance relies on copper pour on pins D1, D2, S1, and S2 per the recommended 25 mm² FR4 layout. No solder paste under "exposed pad" is needed-this is a standard SO-8, not a PowerSO-8 variant.
Does ZXMP6A16DN8TA support parallel operation of both channels for higher current handling?
Yes-both channels share identical electrical characteristics (RDS(ON), VGS(TH), QG) and thermal coupling within the SO-8 package. When paralleled with shared gate drive and symmetric PCB layout, total current capacity increases to -5.8 A continuous with matched current sharing within ±8% across channels at +25°C.
ZXMP6A16DN8TA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 3.9A (Ta)
- Rds On (Max) @ Id, Vgs:
- 85mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12.1nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1021pF @ 30V
- Power - Max:
- 2.15W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
ZXMP6A16DN8TA FAQ
1.How can I place an order for ZXMP6A16DN8TA through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXMP6A16DN8TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXMP6A16DN8TA reliable?
The price and inventory of ZXMP6A16DN8TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMP6A16DN8TA is usually 5 days.
3.What payment methods are accepted for ZXMP6A16DN8TA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMP6A16DN8TA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXMP6A16DN8TA?
ZXMP6A16DN8TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXMP6A16DN8TA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXMP6A16DN8TA?
For technical support, including ZXMP6A16DN8TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMP6A16DN8TA requirements.
6.How does Aetrix verify that ZXMP6A16DN8TA is sourced from the original manufacturer or authorized distributors?
All ZXMP6A16DN8TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMP6A16DN8TA meets industry standards.
7.What is the process for return or replacement of ZXMP6A16DN8TA?
All ZXMP6A16DN8TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMP6A16DN8TA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXMP6A16DN8TA part is unused and in its original packaging.
Return procedure for ZXMP6A16DN8TA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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