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Diodes Incorporated ZXMP6A16DN8TC
- Part No.:
- ZXMP6A16DN8TC
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
ZXMP6A16DN8TC.pdf
- Description:
- MOSFET 2P-CH 60V 2.9A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7,001
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Product details
Overview
ZXMP6A16DN8TC from Diodes Incorporated (formerly Zetex) is a dual P-channel enhancement-mode MOSFET with V(BR)DSS = −60 V, RDS(on) = 0.085 Ω @ VGS = −10 V, ID = −2.9 A, and SOIC-8 package. It serves as a synchronous rectifier or load switch in low-voltage DC-DC converters and battery-powered power management systems.
For engineers reviewing the ZXMP6A16DN8TC datasheet, ZXMP6A16DN8TC pinout, ZXMP6A16DN8TC application, or ZXMP6A16DN8TC equivalent, key selection criteria include verified dual-channel thermal derating (PD = 1.25 W to 2.15 W depending on layout), body diode VSD = −0.85 V at −3.4 A, and gate charge Qg = 24.2 nC @ VGS = −10 V for high-efficiency switching.
Technical Context
This device integrates two identical P-channel trench MOSFETs in a single SOIC-8 package, sharing common source terminals per channel and enabling independent control of two power paths. Its −1.0 V gate threshold (VGS(th)) supports low-voltage logic-level drive from 3.3 V or 5 V controllers.
Thermal design requires attention to dual-die power distribution: RθJA ranges from 60 °C/W (both dies active) to 100 °C/W (single die active), and linear derating factors vary accordingly (10–17 mW/°C). The body diode exhibits trr = 29.2 ns and Qrr = 39.6 nC, supporting moderate-frequency synchronous rectification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | −60 V - Maximum blocking voltage before avalanche conduction in each channel |
| RDS(on) | 0.085 Ω @ VGS = −10 V, ID = −2.9 A - Enables <120 mW conduction loss per channel at rated current |
| ID (cont) | −3.9 A @ TA = 25°C, single-die operation - Defines maximum continuous safe operating current under standard PCB conditions |
| Qg | 24.2 nC @ VDS = −30 V, VGS = −10 V - Determines gate driver power requirement and switching transition time |
| VSD | −0.85 V @ TJ = 25°C, IS = −3.4 A - Forward voltage drop of integrated body diode during reverse conduction |
| trr | 29.2 ns @ IF = −2 A, di/dt = 100 A/µs - Critical for minimizing turn-off losses in synchronous rectifier applications |
Pinout & Package
Package: SOIC-8 (3.9 mm × 4.9 mm × 1.75 mm), surface-mount, dual P-channel configuration with isolated gates and shared sources per channel.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source 1 (S1) | Common source terminal for Channel 1; connects to output rail or ground reference in high-side switch topology |
| 4 | Gate 1 (G1) | Control input for Channel 1; −1.0 V threshold enables direct drive from 3.3 V microcontrollers |
| 5, 6, 7 | Source 2 (S2) | Common source terminal for Channel 2; electrically isolated from S1 for dual independent switching paths |
| 8 | Gate 2 (G2) | Control input for Channel 2; fully independent of G1 for asynchronous or phase-shifted operation |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 0.085 Ω @ −10 V ensures <120 mW conduction loss per channel at −2.9 A, reducing thermal stress in compact layouts |
| Trench MOSFET architecture | Enables simultaneous optimization of on-resistance and switching speed-td(off) = 35 ns, tr = 4.1 ns-without sacrificing ruggedness |
| Low-profile SOIC-8 | 1.75 mm max height allows integration into space-constrained portable power modules and USB-C PD adapters |
| Body diode with fast recovery | trr = 29.2 ns and Qrr = 39.6 nC support efficient synchronous rectification up to ~500 kHz in buck converters |
Applications
| Battery-Powered DC-DC Converters | USB-C Power Delivery Switching |
|---|---|
Use Scenario: Dual-phase 12 V to 5 V/3.3 V buck converter in portable medical monitors with tight thermal budget. IC Role / Device Role / Timing Role: Synchronous rectifier pair replacing Schottky diodes to reduce conduction loss and improve efficiency above 85%. Use Value: 0.085 Ω RDS(on) cuts rectifier loss by >40% vs. 0.3 Ω discrete P-MOSFETs, enabling 2.5 W output in 12 mm² footprint. | Use Scenario: Input power path controller managing dual-source (adapter/battery) selection in USB-C PD sink devices. IC Role / Device Role / Timing Role: Dual independent load switch isolating VBUS and battery rails with controlled turn-on slew rate. Use Value: Independent G1/G2 control enables sequencing (e.g., battery disconnect before adapter connect) without external logic. |
| Industrial Motor Driver H-Bridge | Hot-Swap Power Sequencing |
Use Scenario: Low-voltage (24 V) brushed DC motor driver in factory automation I/O modules requiring bidirectional current control. IC Role / Device Role / Timing Role: High-side P-channel switch in half-bridge configuration, paired with N-channel low-side FETs. Use Value: −60 V V(BR)DSS provides 2× safety margin over 24 V bus, while −1.0 V VGS(th) allows direct PWM from 3.3 V FPGA GPIO. | Use Scenario: Backplane power enable for modular PLC slots where hot-insertion must prevent supply rail collapse. IC Role / Device Role / Timing Role: Dual-channel disconnect switch controlling +12 V and +5 V rails with independent enable timing. Use Value: SOIC-8 footprint and 2.15 W PD rating allow robust 2 A per rail switching without heatsinking in 1U chassis. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LVT-7 | RDS(on) = 0.115 Ω @ −4.5 V; V(BR)DSS = −20 V; SO-8 package | Limited to ≤20 V systems; higher on-resistance reduces efficiency in 24 V+ applications | Select only for 3.3 V/5 V logic-driven ≤12 V loads where lower voltage rating is acceptable |
| SI3993DV-T1-GE3 | RDS(on) = 0.145 Ω @ −4.5 V; V(BR)DSS = −30 V; dual P-channel, same SO-8 footprint | Lower breakdown voltage restricts use to ≤15 V industrial buses; higher Qg = 32 nC increases gate drive demand | Preferable only when cost sensitivity outweighs efficiency and voltage margin requirements |
Compared with DMC2038LVT-7 and SI3993DV-T1-GE3, ZXMP6A16DN8TC delivers superior voltage margin (−60 V), lowest RDS(on) at −10 V, and optimized Qg for high-frequency DC-DC stages-making it the only choice for 24 V+ synchronous rectification and dual-rail hot-swap control.
Availability
ZXMP6A16DN8TC is available at Aetrix Electronics and suitable for battery-powered DC-DC converters, USB-C power delivery systems, and industrial motor control applications requiring stable component supply and long-term production continuity.
Supply support for ZXMP6A16DN8TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its legacy of high-performance analog and power semiconductors for industrial and computing markets.
This device belongs to Zetex's trench MOSFET product line, engineered specifically for high-efficiency, low-voltage power management in space-constrained portable and embedded systems.
FAQ
What is the maximum safe continuous drain current for each channel at 70°C ambient?
Each channel supports −3.1 A continuous drain current at TA = 70°C when mounted on FR4 PCB per condition (b)(d) in the datasheet. This rating assumes single-die operation with 1 oz copper coverage and accounts for thermal derating from the 1.25 W base power dissipation.
Can ZXMP6A16DN8TC be used in parallel configurations across both channels?
No-channels share no internal connection and have independent gate and source terminals, but they are not matched for current sharing. Parallel use requires external current-balancing resistors and separate gate drive to avoid thermal runaway due to VGS(th) mismatch (±0.3 V typical).
Is the body diode suitable for reverse polarity protection?
Yes-the integrated body diode supports reverse current up to −3.2 A continuous and −18.3 A pulsed, with VSD = −0.85 V at −3.4 A. It provides effective reverse polarity protection when placed in series with the power input, provided VDS does not exceed −60 V during fault conditions.
Does this part meet RoHS and REACH compliance requirements?
Yes-ZXMP6A16DN8TC is RoHS-compliant (Pb-free, halogen-free) and REACH-conformant per Diodes Incorporated's material declarations. The SOIC-8 package uses matte tin lead finish and meets JEDEC J-STD-020 moisture sensitivity level MSL3.
ZXMP6A16DN8TC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 2.9A
- Rds On (Max) @ Id, Vgs:
- 85mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 24.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1021pF @ 30V
- Power - Max:
- 1.25W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
ZXMP6A16DN8TC FAQ
1.How can I place an order for ZXMP6A16DN8TC through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXMP6A16DN8TC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXMP6A16DN8TC reliable?
The price and inventory of ZXMP6A16DN8TC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMP6A16DN8TC is usually 5 days.
3.What payment methods are accepted for ZXMP6A16DN8TC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMP6A16DN8TC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXMP6A16DN8TC?
ZXMP6A16DN8TC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXMP6A16DN8TC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXMP6A16DN8TC?
For technical support, including ZXMP6A16DN8TC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMP6A16DN8TC requirements.
6.How does Aetrix verify that ZXMP6A16DN8TC is sourced from the original manufacturer or authorized distributors?
All ZXMP6A16DN8TC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMP6A16DN8TC meets industry standards.
7.What is the process for return or replacement of ZXMP6A16DN8TC?
All ZXMP6A16DN8TC units undergo pre-shipment inspection (PSI). If there is an issue with ZXMP6A16DN8TC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXMP6A16DN8TC part is unused and in its original packaging.
Return procedure for ZXMP6A16DN8TC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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