Diodes Incorporated ZXMP6A17DN8QTC

Overview

ZXMP6A17DN8QTC from Diodes Incorporated is a dual P-channel 60V enhancement-mode MOSFET in SO-8 package, rated for -3.4A continuous drain current at V_GS = -10V, with R_DS(ON) = 125 mΩ and AEC-Q101 qualification for automotive use. It serves as a high-efficiency synchronous rectifier or load switch in DC-DC converters and power management circuits.

For engineers reviewing the ZXMP6A17DN8QTC datasheet, ZXMP6A17DN8QTC pinout, ZXMP6A17DN8QTC application, or ZXMP6A17DN8QTC equivalent, key selection criteria include its dual P-channel topology, low gate threshold (V_GS(TH) = -1.0 V), fast switching (t_F = 11.3 ns), and AEC-Q101-compliant thermal performance (R_θJA = 60 °C/W).

Technical Context

This dual MOSFET integrates two matched P-channel silicon die in a single SO-8 package, enabling complementary half-bridge or dual independent switching configurations. Its design emphasizes low conduction loss (125 mΩ @ -10V) and low gate charge (Q_g = 17.7 nC @ -10V) to minimize drive losses in high-frequency power stages.

The device features integrated body diodes with V_SD = -0.85 V at -2.0 A and t_RR = 25.1 ns, supporting efficient synchronous rectification. Thermal design is enabled by R_θJL = 51.6 °C/W and operation across -55°C to +150°C junction temperature range.

Key Specifications

Pinout & Package

Package: SO-8 (Surface-mount, 8-pin, 4.9 mm × 6.0 mm footprint, 1.45 mm height, RoHS-compliant matte tin terminals).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Compared with DMC2038LVT-7 and SI7850DP-T1-GE3, ZXMP6A17DN8QTC delivers superior thermal performance (60 °C/W vs. ≥70 °C/W), tighter V_GS(TH) distribution for predictable turn-on timing, and AEC-Q101 validation essential for automotive production release.

Availability

ZXMP6A17DN8QTC is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC converters, and medical portable equipment requiring stable component supply with full AEC-Q101 traceability and PPAP documentation support.

Supply support for ZXMP6A17DN8QTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.

ZXMP6A17DN8QTC belongs to Diodes' AEC-Q101-qualified power MOSFET product line, engineered specifically for automotive power distribution, load switching, and synchronous rectification where robustness, thermal stability, and long-term supply assurance are mandatory.

FAQ

What is the maximum continuous drain current rating for ZXMP6A17DN8QTC at 100°C ambient temperature?

At T_A = +100°C, the continuous drain current is derated to -1.8 A based on the linear derating factor of 17 mW/°C and P_D = 2.15 W at T_A = +25°C. This value assumes both channels operate simultaneously on a 25 mm × 25 mm 1 oz copper PCB per the datasheet's Note 10.

Can ZXMP6A17DN8QTC be used in a common-drain (source-follower) configuration?

Yes - each channel supports common-drain operation with gate driven negative relative to source. The -1.0 V minimum V_GS(TH) ensures turn-on with modest gate overdrive, and the body diode orientation allows bidirectional current flow when used as an ideal diode controller in OR-ing applications.

Is the SO-8 package of ZXMP6A17DN8QTC compatible with standard IPC-7351B land patterns?

Yes - the SO-8 footprint matches IPC-7351B SOIC-8 (SOICN) standard: 1.27 mm pitch, 4.90 mm × 6.00 mm body, 0.72 mm lead length. Recommended pad dimensions are 0.802 mm × 1.505 mm (X × Y), matching Diodes' suggested layout in DS33588 Rev 5-2.

Does ZXMP6A17DN8QTC support paralleling of both channels for higher current capacity?

No - the two channels share a common source terminal (S1/S2 shorted internally), preventing independent current sharing. Paralleling would cause uncontrolled current imbalance due to parametric mismatch; the device is intended for dual independent or complementary switching, not current stacking.