Diodes Incorporated ZXMP6A18KTC

Overview

ZXMP6A18KTC from Diodes Incorporated is a P-channel enhancement-mode MOSFET rated for -60 V V_DSS, 55 mΩ R_DS(ON) at V_GS = -10 V, and -10.4 A continuous drain current at T_A = +25°C. It is AEC-Q101 qualified, RoHS-compliant, and designed for automotive disconnect switches and motor control circuits where low gate drive and fast switching are critical.

For engineers reviewing the ZXMP6A18KTC datasheet, ZXMP6A18KTC pinout, ZXMP6A18KTC application, or ZXMP6A18KTC equivalent, key selection criteria include its -60 V breakdown voltage, 44–55 mΩ on-resistance range, -1.0 V gate threshold, 23–44 nC total gate charge, and TO252 (DPAK) package thermal performance under automotive ambient conditions.

Technical Context

This MOSFET operates in enhancement mode with a negative gate-source threshold voltage (-1.0 V typical), enabling direct interface with 3.3 V or 5 V logic-level controllers without level-shifting. Its low R_DS(ON) and fast switching (t_R = 5.8 ns, t_F = 23 ns) reduce conduction and switching losses in high-frequency PWM-driven loads.

The device integrates a robust body diode (V_SD = -0.85 to -0.95 V at I_S = -4.2 A) and is 100% production-tested for unclamped inductive switching (UIS), supporting reliable operation in inductive motor and solenoid drive applications with energy recovery demands.

Key Specifications

Pinout & Package

Package: TO252 (DPAK), surface-mount, thermally enhanced plastic case with exposed drain pad for improved heat dissipation. Moisture sensitivity level 1 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with DMT6009LPS-13 and IPD80P03P4L-11, ZXMP6A18KTC uniquely balances -60 V rating, TO252 footprint, and logic-level gate drive in a single AEC-Q101-qualified part-making it optimal for compact, 48 V-compatible automotive switches where board space and gate drive simplicity are prioritized over extreme current handling or sub-30 V optimization.

Availability

ZXMP6A18KTC is available at Aetrix Electronics and suitable for automotive door lock actuators, 12 V battery disconnect switches, and 48 V mild hybrid DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for ZXMP6A18KTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

ZXMP6A18KTC belongs to Diodes' automotive-qualified ZXMP series of P-channel MOSFETs, engineered specifically for high-reliability load switching and motor control in harsh-temperature, high-vibration environments.

FAQ

Is ZXMP6A18KTC suitable for hot-swap applications in 48 V systems?

Yes. Its -60 V V_DSS, 100% UIS testing, and 65 mJ E_AS support safe insertion and removal under load in 48 V architectures. The device's low R_DS(ON) minimizes inrush current limiting resistance, while its -1.0 V V_GS(TH) enables direct control from 3.3 V hot-swap controllers without level shifters.

What is the maximum PCB copper area required to achieve R_θJA = 12.3 °C/W?

To achieve the 12.3 °C/W R_θJA rating, the device must be mounted on an FR-4 PCB with ≥50 mm × 50 mm single-sided 2 oz copper coverage, including direct connection of the exposed drain pad to the thermal plane. Smaller pads increase thermal resistance nonlinearly-e.g., 25 mm × 25 mm reduces PD to 2.15 W.

Does ZXMP6A18KTC require a gate resistor for ESD protection?

Yes. Although gate leakage is ≤±100 nA, the MOSFET's gate oxide is susceptible to ESD damage. A 10–47 Ω series resistor placed within 2 mm of the gate pin limits peak current during fast transients, and a 10 kΩ pulldown resistor to source ensures defined off-state during power-up or floating control lines.

Can ZXMP6A18KTC replace N-channel MOSFETs in high-side switching configurations?

No. As a P-channel device, ZXMP6A18KTC is inherently suited for high-side switching but cannot substitute for N-channel MOSFETs without circuit redesign. Its gate drive requires inversion logic (active-low control), and its R_DS(ON) is higher than comparable N-channel parts-making it inappropriate for direct drop-in replacement in existing N-channel layouts.