Infineon Technologies 92-0235

Overview

92-0235 from IXYS (now Littelfuse) is a 400 V, 20 A, 125 W silicon N-channel IGBT with integrated gate resistors (R1 = 75 Ω, R2 = 10–30 kΩ) and built-in avalanche ruggedness for inductive switching. It features 1.35–1.55 V V_CE(on) at 10 A/4.5 V, 27 nC total gate charge, and self-clamped inductive current up to 11.5 A (L = 4.7 mH, T_C = 25°C). Used in motor control inverters and UPS DC–AC stages.

For engineers reviewing the 92-0235 datasheet, 92-0235 pinout, 92-0235 application, or 92-0235 equivalent, key selection criteria include clamped inductive switching capability, gate threshold stability over temperature (1.3–2.2 V), thermal resistance (R_θJC = 1.2 °C/W), short-circuit withstand time (120 µs), and gate drive compatibility with 4.5–5.0 V logic-level signals.

Technical Context

This IGBT employs a trench-gate field-stop structure optimized for low conduction loss and controlled switching speed. Its integrated R1/R2 network provides inherent gate damping and turn-off stabilization without external components, reducing layout sensitivity and EMI risk in high-di/dt applications.

The device supports self-clamped avalanche operation up to 15.5 A (L = 0.7 mH, 25°C) and maintains safe operating area (SOA) integrity under repetitive inductive switching. Thermal design leverages low R_θJC (1.2 °C/W) for direct heatsink mounting and supports junction temperatures from –40°C to 175°C.

Key Specifications

Pinout & Package

92-0235 uses the TO-220AB package (3-lead, insulated tab), with leads assigned as follows: Lead 1 = Gate, Lead 2 = Collector (tab), Lead 3 = Emitter. The metal tab is electrically connected to the collector and must be isolated from heatsink unless system ground reference permits.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with STGP10NC60KD and IRG4PH40KD, 92-0235 delivers lower conduction loss, built-in gate damping, and superior thermal performance-making it optimal for space-constrained, thermally demanding inverter modules where layout simplicity and avalanche robustness are prioritized.

Availability

92-0235 is available at Aetrix Electronics and suitable for motor drive inverters, uninterruptible power supplies, induction heating systems, and industrial DC motor controllers requiring stable component supply and long-term production continuity.

Supply support for 92-0235 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IXYS Corporation, now part of Littelfuse, specializes in high-performance power semiconductors, including IGBTs, MOSFETs, and thyristors for industrial, renewable energy, and transportation systems.

The 92-0235 belongs to IXYS' "UltraFast" IGBT family, designed specifically for high-efficiency, high-reliability inverter applications where ruggedness, low V_CE(on), and integrated gate control simplify system-level design.

FAQ

What is the maximum allowable gate-emitter voltage for 92-0235?

The absolute maximum V_GE is ±20 V, but the recommended operating range is –10 V to +20 V. Clamped gate-to-emitter breakdown voltage is 12 V (typical), verified at I_G = 2 mA. Exceeding ±20 V risks permanent gate oxide damage, especially during transient events or improper driver biasing.

Can 92-0235 be used without an external gate resistor?

Yes-its integrated R1 (75 Ω) and R2 (10–30 kΩ) provide sufficient gate damping and turn-off stabilization for most 10–20 kHz inverter applications. External resistors are unnecessary unless fine-tuning of switching speed or EMI suppression beyond datasheet-tested conditions is required.

Does 92-0235 require a negative gate voltage for reliable turn-off?

No-92-0235 achieves clean turn-off with 0 V gate drive due to its internal R2 pull-down resistor (10–30 kΩ). A negative voltage is not required, though applying –5 V may improve noise immunity in high-noise environments; the device is fully functional with 0 V to +5 V gate drive.

What is the meaning of "self-clamped inductive switching current" in the datasheet?

It refers to the peak current the IGBT can safely interrupt in an inductive load without external snubbers or clamping diodes. For 92-0235, this is 11.5 A with L = 4.7 mH at 25°C-meaning the device internally limits V_CE during turn-off to protect itself while dissipating stored inductive energy as heat in the silicon.