Infineon Technologies AIGB15N65H5ATMA1

Overview

AIGB15N65H5ATMA1 from Infineon is a 650V, 15A high-speed TRENCHSTOP™ 5 IGBT in PG-TO263-3 package, optimized for hard-switching and resonant topologies in on-board chargers, off-board chargers, and DC/DC converters. It delivers 1.65V V_CE(sat) at 25°C, 40nC gate charge, and 175°C maximum junction temperature with AEC-Q101 qualification.

For engineers reviewing the AIGB15N65H5ATMA1 datasheet, AIGB15N65H5ATMA1 pinout, AIGB15N65H5ATMA1 application, or AIGB15N65H5ATMA1 equivalent, key selection criteria include switching energy (E_ts = 0.20 mJ @ 7.5A), thermal resistance (R_th(j-c) = 1.40 K/W), dynamic performance across temperature, and RoHS-compliant green packaging.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop technology to achieve low conduction loss and fast switching simultaneously. Its 40 nC total gate charge and 930 pF input capacitance enable precise gate drive control, while the 7 nH internal emitter inductance minimizes parasitic oscillation during turn-off.

The device supports operation up to 175°C junction temperature with stable V_GE(th) (3.2–4.8 V) and low V_CE(sat) drift (1.65 V → 1.95 V from 25°C to 175°C). Switching times are tightly specified: t_d(off) = 151 ns and t_f = 22 ns at 25°C, 7.5A, with E_off = 0.04 mJ under identical conditions.

Key Specifications

Pinout & Package

Package: PG-TO263-3 (D²PAK), surface-mount with isolated backside collector terminal. Thermal pad on backside provides low R_th(j-c) path to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Compared with IKW15N65ES5 and FGH15N60FTD, AIGB15N65H5ATMA1 offers optimal balance of low gate charge (40 nC), AEC-Q101 compliance, and 650 V rating-making it the preferred choice for automotive OBC and DC/DC where reliability, thermal headroom, and gate drive efficiency are jointly critical.

Availability

AIGB15N65H5ATMA1 is available at Aetrix Electronics and suitable for on-board chargers, off-board chargers, and DC/DC converters requiring stable component supply, automotive-grade qualification, and consistent thermal performance across production volumes.

Supply support for AIGB15N65H5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

AIGB15N65H5ATMA1 belongs to Infineon's TRENCHSTOP™ 5 high-speed IGBT product line, engineered specifically for high-efficiency, high-reliability switching in electric vehicle power electronics and industrial power conversion systems.

FAQ

What is the maximum gate-emitter voltage rating for AIGB15N65H5ATMA1?

The absolute maximum gate-emitter voltage is ±20 V for continuous operation and ±30 V for transient pulses ≤10 µs with duty cycle <1%. Exceeding ±20 V continuously risks gate oxide degradation, while transient spikes beyond ±30 V may cause irreversible gate failure. Gate drive circuits must include clamping diodes or active regulation to stay within these limits.

Does AIGB15N65H5ATMA1 include an integrated freewheeling diode?

No, AIGB15N65H5ATMA1 is a standalone IGBT without an integrated body diode. External anti-parallel diodes-such as Infineon's IDH08SG60C or IDH15SG60C-are required for inductive load commutation. The device's low tail current and fast turn-off characteristics reduce diode reverse recovery stress, enabling use with ultrafast silicon or SiC Schottky diodes.

How does the 7 nH internal emitter inductance affect PCB layout?

The 7 nH internal emitter inductance-measured 5 mm from the case-must be compensated by minimizing external emitter loop inductance. Layout best practices include symmetric Kelvin emitter connections, short low-inductance gate-emitter traces, and separation of power and gate return paths. Failure to account for this inductance increases voltage overshoot and oscillation during turn-off, especially at high dI/dt.

Is AIGB15N65H5ATMA1 suitable for short-circuit ruggedness testing per IEC 60747-9?

Yes, AIGB15N65H5ATMA1 is dynamically stress tested per AEC-Q101 and supports short-circuit withstand time (t_SC) of 10 µs at V_CE = 650 V, T_vj = 150°C, and V_GE = 15 V. This enables implementation of robust protection schemes in OBCs and DC/DC converters without external desaturation detection circuitry in many cases.