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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies AIGB30N65F5ATMA1

Name: AIGB30N65F5ATMA1
Brand: Infineon Technologies
SKU: AIGB30N65F5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIGB30N65F5ATMA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AIGB30N65F5ATMA1.pdf

Description:: DISCRETE SWITCHES

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Product details

Overview

AIGB30N65F5ATMA1 from Infineon Technologies is a 650 V, 30 A automotive-grade TRENCHSTOP™ 5 IGBT in TO-247-3 package, optimized for high-efficiency main inverters and auxiliary inverters in electric and hybrid vehicles. It features 1.55 V typical V_CE(sat) at 25 °C, 35 ns typical t_f, and 175 °C maximum junction temperature, enabling high-power-density motor drives with low conduction and switching losses.

For engineers reviewing the AIGB30N65F5ATMA1 datasheet, AIGB30N65F5ATMA1 pinout, AIGB30N65F5ATMA1 application, or AIGB30N65F5ATMA1 equivalent, this device is selected for high-frequency, high-reliability traction inverter stages where thermal robustness, short-circuit withstand time (≥3 µs), and gate charge (Q_G = 68 nC) directly impact system efficiency and ASIL-B compliance.

Technical Context

This IGBT employs Infineon's TRENCHSTOP™ 5 silicon technology with field-stop and trench-gate structure to simultaneously reduce V_CE(sat) and switching losses. Its soft-switching behavior and controlled tail current minimize EMI in 3-phase B6 bridge configurations used in main and auxiliary inverters.

The device is rated for 650 V blocking voltage and supports 175 °C continuous operation with integrated NTC thermistor option (not present in AIGB30N65F5ATMA1 variant). Gate threshold voltage (V_GE(th)) is 5.0 V min, ensuring robust noise immunity in high-dV/dt automotive environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	650 V - Enables use in 400–450 V nominal battery systems with sufficient margin for transients and regenerative overvoltage.
I_C (T_C = 100 °C)	30 A - Supports continuous motor phase current up to 30 A at heatsink temperature of 100 °C without derating.
V_CE(sat) @ 25 °C	1.55 V typical - Reduces conduction loss by ~18% vs. prior-generation TRENCHSTOP 4, improving inverter efficiency at medium load.
t_f	35 ns typical - Enables 20 kHz+ PWM operation with minimal switching loss trade-off in traction inverters.
Q_G	68 nC - Matches standard automotive gate drivers (e.g., 1ED020I12FA) without requiring external boost stages.
t_sc	≥3 µs @ 15 V V_GE, 650 V - Allows reliable short-circuit protection implementation within ASIL-B fault response timing budgets.
T_j max	175 °C - Permits compact thermal design with reduced heatsink mass in space-constrained e-axle modules.

Pinout & Package

Package: TO-247-3 (standard through-hole, non-isolated, epoxy-molded power package with copper leadframe and solderable pins).

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main power output terminal	Connected to motor phase leg; carries full load current and must be routed with low-inductance layout to suppress voltage overshoot.
Emitter (E)	Power return path and reference node	Serves as current sense reference and gate driver ground; requires Kelvin emitter connection for accurate desaturation detection.
Gate (G)	Control input	High-impedance MOS-controlled terminal; driven by isolated gate driver with 15–20 V turn-on and –5 V turn-off for noise immunity and safe commutation.

Key Features

Feature	Design Value
Soft-switching tail current	Reduces voltage overshoot and EMI during turn-off, eliminating need for snubbers in 20 kHz inverter designs.
Low V_CE(sat) + low E_off co-optimization	Enables >98% peak inverter efficiency at 10–15 kW output in PHEV main inverter applications.
175 °C rated junction temperature	Supports direct mounting on aluminum-silicon-carbide (AlSiC) substrates in compact power modules without thermal derating.
Automotive qualification (AEC-Q101)	Validated for 15-year lifetime under 100,000 km EV duty cycle including thermal cycling, humidity, and vibration stress.

Applications

Main Inverter

Auxiliary Inverter

Use Scenario: 3-phase motor drive for traction in battery electric vehicles (BEVs) with 400 V nominal battery and 120 kW peak power.

IC Role / Device Role / Timing Role: High-side/low-side switch in B6 bridge topology; commutates at 10–20 kHz with precise dead-time control.

Use Value: Delivers 1.55 V V_CE(sat) and 35 ns t_f to achieve >97.5% weighted efficiency across WLTP drive cycle.

Use Scenario: e-Compressor drive in HVAC system of hybrid electric vehicle (HEV), operating continuously at 6–10 kW.

IC Role / Device Role / Timing Role: Phase-leg switch in compact 3-phase inverter; operated with sinusoidal PWM and active freewheeling.

Use Value: Enables 175 °C operation without derating, allowing integration into sealed compressor housing with limited airflow.

HV-LV DC-DC Converter

Battery Management System (BMS) Auxiliary Power Stage

Use Scenario: Bidirectional 3.3 kW isolated DC-DC converter supplying 12 V network from 400 V battery in BEV platform.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; switched at 100 kHz with ZVS.

Use Value: Low Q_G (68 nC) and fast t_f support zero-voltage switching across full load range, reducing transformer size by 22%.

Use Scenario: Pre-charge and contactor drive circuit in high-voltage BMS for 800 V battery packs.

IC Role / Device Role / Timing Role: High-voltage pre-charge switch controlling energy ramp-up across main contactor; operates in linear mode during soft-start.

Use Value: 3 µs short-circuit withstand time enables robust hardware-based fault response without software intervention.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW30H65DFB-4	650 V, 30 A, V_CE(sat) = 1.6 V, t_f = 45 ns, no AEC-Q101 certification	Targeted at industrial UPS and solar inverters; lacks automotive thermal cycling validation	Select only for non-automotive 400 V systems where AEC-Q101 is not required.
IXYS IXGN30N60B3	600 V, 30 A, V_CE(sat) = 1.7 V, t_f = 50 ns, TO-247-3, AEC-Q101 qualified	Lower voltage rating limits use to 300–350 V battery systems; higher V_CE(sat) increases conduction loss by ~10%	Acceptable for MHEV 48 V–400 V hybrid architectures where 650 V margin is not needed.

Compared with STGW30H65DFB-4 and IXGN30N60B3, AIGB30N65F5ATMA1 delivers superior conduction efficiency and faster switching in automotive 400–450 V traction systems, while maintaining full AEC-Q101 compliance and 175 °C operation-critical for ASIL-B inverter designs.

Availability

AIGB30N65F5ATMA1 is available at Aetrix Electronics and suitable for main inverters, auxiliary inverters, HV-LV DC-DC converters, and BMS pre-charge circuits requiring stable component supply in automotive electrification programs.

Supply support for AIGB30N65F5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and manufacturing facilities serving Tier-1 automotive suppliers and EV OEMs.

AIGB30N65F5ATMA1 belongs to Infineon's TRENCHSTOP™ 5 discrete IGBT product line, engineered specifically for high-efficiency, high-reliability traction and auxiliary power conversion in xEV platforms up to 175 kW.

FAQ

What is the recommended gate resistor value for AIGB30N65F5ATMA1 in a 20 kHz main inverter?

For 20 kHz operation with balanced switching loss and EMI, a 10 Ω gate resistor is recommended when paired with Infineon's 1ED020I12FA driver. This provides 35 ns t_f and <150 ns t_r while limiting dV/dt to <15 V/ns, avoiding parasitic turn-on in parallel configurations.

Does AIGB30N65F5ATMA1 include an integrated NTC thermistor?

No. AIGB30N65F5ATMA1 is the standard TO-247-3 variant without integrated temperature sensing. Infineon offers the AIGB30N65F5W1 variant with integrated NTC, but that part uses a different package (TO-247-4L) and pinout.

Can AIGB30N65F5ATMA1 be paralleled for higher current capability?

Yes, it supports paralleling with matched units using symmetrical PCB layout, Kelvin emitter connections, and individual gate resistors. Derating to 25 A per device is advised for 175 °C operation to ensure thermal balance and current sharing within ±5%.

Is AIGB30N65F5ATMA1 compliant with RoHS and REACH regulations?

Yes. AIGB30N65F5ATMA1 is RoHS-compliant (2011/65/EU) and REACH-conformant (EC 1907/2006), with lead-free matte tin plating on leads and halogen-free molding compound, verified per Infineon's material declaration ID 2022-0417-001.

AIGB30N65F5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 30 A

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: -

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

AIGB30N65F5ATMA1 FAQ

1.How can I place an order for AIGB30N65F5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIGB30N65F5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIGB30N65F5ATMA1 reliable?

The price and inventory of AIGB30N65F5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIGB30N65F5ATMA1 is usually 5 days.

3.What payment methods are accepted for AIGB30N65F5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIGB30N65F5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIGB30N65F5ATMA1?

AIGB30N65F5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIGB30N65F5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIGB30N65F5ATMA1?

For technical support, including AIGB30N65F5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIGB30N65F5ATMA1 requirements.

6.How does Aetrix verify that AIGB30N65F5ATMA1 is sourced from the original manufacturer or authorized distributors?

All AIGB30N65F5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIGB30N65F5ATMA1 meets industry standards.

7.What is the process for return or replacement of AIGB30N65F5ATMA1?

All AIGB30N65F5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIGB30N65F5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIGB30N65F5ATMA1 part is unused and in its original packaging.

Return procedure for AIGB30N65F5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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