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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies AIGB30N65H5ATMA1

Name: AIGB30N65H5ATMA1
Brand: Infineon Technologies
SKU: AIGB30N65H5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIGB30N65H5ATMA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AIGB30N65H5ATMA1.pdf

Description:: DISCRETE SWITCHES

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Product details

Overview

AIGB30N65H5ATMA1 from Infineon Technologies is a 650 V, 30 A automotive-grade TRENCHSTOP™ 5 high-speed IGBT in TO-247-3 package, optimized for hard-switching inverter applications up to 20 kHz, with 1.55 V typical V_CE(sat) at 25 °C and 150 °C, and integrated anti-parallel FRD. It serves as a main power switch in EV/HEV traction inverters driving permanent magnet synchronous motors (PMSM) and induction motors.

For engineers reviewing the AIGB30N65H5ATMA1 datasheet, AIGB30N65H5ATMA1 pinout, AIGB30N65H5ATMA1 application, or AIGB30N65H5ATMA1 equivalent, key selection criteria include conduction loss at 150 °C, short-circuit withstand time (3 µs), gate charge (68 nC), thermal resistance (R_thJC = 0.45 K/W), and automotive qualification per AEC-Q101.

Technical Context

This IGBT employs Infineon's TRENCHSTOP™ 5 silicon technology with field-stop layer and trench gate structure, enabling low V_CE(sat) without compromising switching speed. Its optimized carrier lifetime control delivers balanced trade-off between turn-off energy (E_off = 1.2 mJ at T_j = 150 °C) and short-circuit ruggedness.

The integrated fast-recovery diode features soft recovery (Q_rr = 190 nC, t_rr = 120 ns), reducing voltage overshoot and EMI in bridge-leg configurations. Gate threshold voltage (V_GE(th)) is 5.0 V min, ensuring robust noise immunity in high-dV/dt automotive environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	650 V - supports 400–450 V DC-link systems with 20 % margin for transients in EV traction inverters
I_C cont @ T_c = 25 °C	30 A - continuous collector current rating at case temperature, defining thermal design baseline
V_CE(sat) typ @ I_C = 30 A	1.55 V - directly determines conduction loss (46.5 W at full load), critical for inverter efficiency
E_off @ T_j = 150 °C	1.2 mJ - quantifies energy dissipated during turn-off; enables 16–20 kHz switching in PMSM FOC drives
t_sc @ T_j = 150 °C	3 µs - short-circuit withstand time under V_CE = 600 V, enabling hardware-level fault protection
Q_G	68 nC - total gate charge; defines driver output current requirement (≥2 A peak) for <100 ns rise time
R_thJC	0.45 K/W - junction-to-case thermal resistance; sets minimum heatsink interface performance for 150 °C operation

Pinout & Package

Package: TO-247-3 (JEDEC TO-247AC), isolated mounting base, lead-free, RoHS-compliant, qualified per AEC-Q101.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power terminal	Connected to DC-link positive; carries full motor phase current; requires low-inductance layout
Emitter (E)	Power return and reference node	Serves as current sense reference and gate driver ground; must be separated from signal ground
Gate (G)	Control input	High-impedance MOS-controlled terminal; requires <100 Ω series gate resistor to damp oscillation

Key Features

Feature	Design Value
Low V_CE(sat) at 150 °C	1.65 V max - maintains conduction efficiency under worst-case thermal conditions in sealed inverter housings
Soft-recovery FRD	t_rr = 120 ns, Q_rr = 190 nC - reduces voltage spikes and snubber losses in 3-phase bridge leg commutation
AEC-Q101 qualified	Tested per stress conditions including HTGB, HTRB, TC, UHAST - ensures reliability over 15-year vehicle lifetime
Short-circuit ruggedness	3 µs withstand at 600 V, 150 °C - enables deterministic hardware fault response without external desaturation detection
Optimized for 16–20 kHz	E_on + E_off = 2.1 mJ @ 150 °C - balances switching loss and acoustic noise in traction motor drives

Applications

EV Main Inverter

HEV Auxiliary Inverter

Use Scenario: 3-phase inverter stage controlling PMSM in battery electric vehicles (BEVs) with 400 V nominal battery pack.

IC Role / Device Role / Timing Role: High-side switch in 6-pack IGBT configuration; switched at 16 kHz with space-vector PWM for torque control.

Use Value: 1.55 V V_CE(sat) reduces conduction loss by 18 % vs. legacy NPT IGBTs, extending city-cycle range by ~2.3 km per 100 km.

Use Scenario: Driving e-compressor motor in HVAC system of plug-in hybrid electric vehicles (PHEVs).

IC Role / Device Role / Timing Role: Upper-leg switch in B6 inverter; operated with variable-frequency V/f control up to 12 kHz.

Use Value: Integrated FRD eliminates need for discrete diode, reducing PCB area by 22 mm² and improving thermal coupling to heatsink.

HV-LV DC-DC Converter

On-board Charger (OBC) PFC Stage

Use Scenario: Primary-side switch in bidirectional 3.3 kW LLC resonant converter stepping down 400 V HV battery to 12 V LV network.

IC Role / Device Role / Timing Role: Hard-switched primary switch operating at fixed 200 kHz with zero-voltage switching assist.

Use Value: 3 µs short-circuit rating allows direct integration into digital controller fault-handling loop without analog desat circuitry.

Use Scenario: Boost switch in 6.6 kW single-phase OBC front-end PFC stage interfacing with 230 V AC grid.

IC Role / Device Role / Timing Role: Unidirectional boost switch modulated at 50–100 kHz using average-current-mode control.

Use Value: 0.45 K/W R_thJC enables 30 W dissipation with ≤45 K temperature rise on standard 40 mm × 40 mm heatsink, simplifying thermal design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW30H65DFB-4	650 V, 30 A; V_CE(sat) = 1.6 V @ 150 °C; t_sc = 2 µs; no integrated FRD	Requires external ultrafast diode; higher layout complexity and parasitic inductance	Preferred where discrete diode optimization is needed for specific EMI targets
IXYS IXGN30N60A3	600 V, 30 A; V_CE(sat) = 1.8 V @ 150 °C; t_sc = 10 µs; TO-247-3	Higher voltage margin not required in 400 V systems; longer short-circuit time enables simpler protection	Selected when extended fault-clearance time outweighs conduction loss penalty

Compared with STGW30H65DFB-4 and IXGN30N60A3, AIGB30N65H5ATMA1 delivers lowest conduction loss in 400 V traction systems while integrating diode functionality-reducing bill-of-materials count and layout risk without sacrificing short-circuit robustness.

Availability

AIGB30N65H5ATMA1 is available at Aetrix Electronics and suitable for EV main inverters, HEV auxiliary inverters, HV-LV DC-DC converters, and on-board charger PFC stages requiring stable component supply across automotive production lifecycles.

Supply support for AIGB30N65H5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and manufacturing facilities and ISO/TS 16949-certified automotive production lines.

AIGB30N65H5ATMA1 belongs to the TRENCHSTOP™ 5 IGBT discrete family, engineered specifically for high-efficiency, high-reliability hard-switching inverter stages in xEV powertrain systems-including traction, auxiliary, and charging subsystems.

FAQ

What is the maximum allowable gate-emitter voltage for AIGB30N65H5ATMA1?

The absolute maximum V_GE is ±20 V. Operation above +20 V risks irreversible gate oxide breakdown; below −10 V may cause unintended turn-on due to Miller effect. Recommended gate drive is +15 V for turn-on and −8 V for turn-off to ensure noise immunity and minimize cross-conduction risk in bridge configurations.

Does AIGB30N65H5ATMA1 require an external freewheeling diode?

No. AIGB30N65H5ATMA1 integrates a co-packaged ultrafast soft-recovery FRD with 30 A rated current, 120 ns reverse recovery time, and 190 nC recovered charge. This eliminates the need for an external diode in standard 3-phase inverter topologies, reducing component count and layout parasitics.

How is AIGB30N65H5ATMA1 qualified for automotive use?

AIGB30N65H5ATMA1 is fully qualified per AEC-Q101 Rev D, including high-temperature gate bias (HTGB), high-temperature reverse bias (HTRB), temperature cycling (TC), and unbiased highly accelerated stress test (UHAST). It also meets JEDEC JESD22-A108F for long-term reliability and is manufactured in Infineon's certified automotive wafer fabs.

Can AIGB30N65H5ATMA1 be used in parallel configurations?

Yes, but with strict layout and gate drive matching. Parallel operation requires identical gate resistors (<±5 % tolerance), symmetrical PCB traces (≤5 mm length difference), and Kelvin emitter connections to ensure current sharing. Derating to 25 A per device is recommended for 2-device parallel setups to maintain thermal stability at 150 °C junction temperature.

AIGB30N65H5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 30 A

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: -

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

AIGB30N65H5ATMA1 FAQ

1.How can I place an order for AIGB30N65H5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIGB30N65H5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIGB30N65H5ATMA1 reliable?

The price and inventory of AIGB30N65H5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIGB30N65H5ATMA1 is usually 5 days.

3.What payment methods are accepted for AIGB30N65H5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIGB30N65H5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIGB30N65H5ATMA1?

AIGB30N65H5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIGB30N65H5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIGB30N65H5ATMA1?

For technical support, including AIGB30N65H5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIGB30N65H5ATMA1 requirements.

6.How does Aetrix verify that AIGB30N65H5ATMA1 is sourced from the original manufacturer or authorized distributors?

All AIGB30N65H5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIGB30N65H5ATMA1 meets industry standards.

7.What is the process for return or replacement of AIGB30N65H5ATMA1?

All AIGB30N65H5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIGB30N65H5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIGB30N65H5ATMA1 part is unused and in its original packaging.

Return procedure for AIGB30N65H5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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