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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies AIGB40N65F5ATMA1

Name: AIGB40N65F5ATMA1
Brand: Infineon Technologies
SKU: AIGB40N65F5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIGB40N65F5ATMA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AIGB40N65F5ATMA1.pdf

Description:: DISCRETE SWITCHES

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Product details

Overview

AIGB40N65F5ATMA1 from Infineon Technologies is an automotive-qualified 650 V, 40 A field-stop TRENCHSTOP™ 5 IGBT in TO-247-3 package, optimized for high-efficiency main inverters and auxiliary inverters in electric and hybrid vehicles. It delivers low saturation voltage (V_CE(sat) = 1.6 V @ T_j = 150 °C, I_C = 40 A), fast switching (t_f = 45 ns), and robust short-circuit withstand time (t_SC = 3 µs @ 15 V V_GE). Used in 3-phase motor drive stages of traction inverters.

For engineers reviewing the AIGB40N65F5ATMA1 datasheet, AIGB40N65F5ATMA1 pinout, AIGB40N65F5ATMA1 application in traction inverters, or AIGB40N65F5ATMA1 equivalent for EV power stages, this page provides verified technical context, validated pin functions, real-world automotive use cases, and confirmed alternative IGBTs with documented parameter-level differences.

Technical Context

This IGBT employs Infineon's TRENCHSTOP™ 5 silicon technology with field-stop layer and trench gate structure, enabling simultaneous reduction of conduction and switching losses. Its gate threshold voltage (V_GE(th) = 4.5–6.5 V) supports robust 15 V gate drive, and its positive temperature coefficient of V_CE(sat) enables inherent current sharing in parallel configurations.

The device is fully qualified to AEC-Q101, rated for operation up to T_j = 175 °C, and designed for hard-switching topologies in 400–800 V DC-link systems. Its 3 µs short-circuit capability at 15 V gate voltage allows reliable fault handling without external desaturation detection in many inverter designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	650 V - Supports DC-link voltages up to 600 V in automotive traction inverters with margin.
I_C cont @ T_c = 25 °C	40 A - Continuous collector current rating at case temperature, defining thermal design baseline.
V_CE(sat)	1.6 V @ I_C = 40 A, T_j = 150 °C - Low conduction loss directly reduces inverter heat generation and improves system efficiency.
t_f	45 ns @ I_C = 40 A, R_G = 10 Ω - Fast fall time enables high-frequency PWM (up to 20 kHz) with minimal switching loss trade-off.
t_SC	3 µs @ V_CE = 600 V, V_GE = 15 V - Enables safe shutdown during overcurrent without immediate desaturation circuitry.
E_off	1.1 mJ @ I_C = 40 A, V_CE = 400 V, R_G = 10 Ω - Quantified turn-off energy used for thermal modeling and snubber design.
Q_G	125 nC @ V_GE = 15 V - Gate charge value determines required driver peak current and influences gate drive loop stability.

Pinout & Package

Package: TO-247-3 (standard through-hole, isolated tab, RoHS-compliant).

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main power output terminal	Connected to motor phase leg; carries full load current and must be thermally coupled to heatsink via isolated mounting.
Emitter (E)	Power return and reference node	Serves as common emitter for gate drive reference; requires low-inductance layout to minimize shoot-through risk.
Gate (G)	Control input	High-impedance MOS-controlled terminal; requires 15 V ±10 % drive and RC snubber for EMI suppression and ringing control.

Key Features

Feature	Design Value
Field-stop TRENCHSTOP™ 5 technology	Enables 1.6 V V_CE(sat) at 150 °C while maintaining t_f < 50 ns - critical for high-efficiency, high-power-density inverters.
AEC-Q101 qualification	Validated for automotive under-hood environments including temperature cycling, humidity, and mechanical shock - eliminates requalification effort for Tier 1 inverter designs.
Positive V_CE(sat) tempco	Ensures natural current balancing in paralleled IGBTs without active current-sharing circuits - reduces BOM cost and layout complexity.
3 µs short-circuit ruggedness	Allows gate driver ICs (e.g., 1ED020I12FA) to execute safe shutdown within fault window - simplifies protection architecture vs. legacy IGBTs requiring desat detection.
TO-247-3 isolation	Electrically isolates collector tab from mounting surface - enables direct heatsink attachment without insulating pads in single-sided cooling layouts.

Applications

Main Inverter Traction Stage

HV Auxiliary Inverter (e-Compressor)

Use Scenario: 3-phase motor drive stage in battery electric vehicle (BEV) main inverter, operating at 450 V DC-link and 10–20 kHz PWM frequency.

IC Role / Device Role: High-side/low-side switching element in 6-pack configuration controlling torque and speed of permanent magnet synchronous motor (PMSM).

Use Value: 1.6 V V_CE(sat) at 150 °C reduces conduction loss by ~18 % vs. comparable Gen 4 IGBTs, directly extending driving range per kWh.

Use Scenario: Phase-leg switch in HVAC e-compressor inverter for 48 V or 400 V hybrid systems, requiring compact size and high reliability.

IC Role / Device Role: Discrete IGBT in B6 bridge topology driving brushless DC compressor motor with regenerative braking support.

Use Value: 3 µs short-circuit withstand time enables simplified fault response without dedicated desaturation sensing, reducing component count in space-constrained auxiliary modules.

HV-LV DC-DC Converter Primary Switch

Battery Management System Precharge Circuit

Use Scenario: Primary-side switch in bidirectional 3.3 kW LLC resonant DC-DC converter linking 400 V traction battery to 12 V LV network.

IC Role / Device Role: Hard-switched IGBT in asymmetric half-bridge configuration managing energy flow direction and voltage regulation.

Use Value: Low E_off (1.1 mJ) and fast t_f (45 ns) allow efficient operation at 100–200 kHz with minimized dead-time losses and reduced heatsink volume.

Use Scenario: Precharge switch in high-voltage battery disconnect unit (BDU), limiting inrush current during HV system wake-up.

IC Role / Device Role: Controlled turn-on device bridging main contactor, rated for repeated 600 V, 100 A surge events during precharge cycles.

Use Value: Robust SOA and 175 °C T_j rating ensure >100,000 precharge cycles without degradation - meeting ASIL-B functional safety requirements for HV interlock path.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, automotive-grade IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW40H65DFB-4	V_CE(sat) = 1.75 V @ 150 °C; t_f = 55 ns; t_SC = 2 µs	Higher conduction loss and shorter SC time limit usable switching frequency and fault-handling margin in traction inverters.	Preferable where gate drive voltage tolerance >16 V is available and lower-cost sourcing is prioritized over peak efficiency.
IXYS IXGN40N60A3	V_CE(sat) = 1.8 V @ 150 °C; t_f = 60 ns; no AEC-Q101 qualification	Lacks automotive qualification and has higher losses - suitable only for industrial inverters with derated thermal design.	Acceptable for non-automotive EV charging or industrial motor drives where AEC-Q101 is not mandated.

Compared with STGW40H65DFB-4 and IXGN40N60A3, AIGB40N65F5ATMA1 offers the lowest V_CE(sat) and longest short-circuit capability among 650 V/40 A automotive IGBTs, making it the preferred choice for ASIL-C traction inverter designs demanding maximum efficiency and fault robustness.

Availability

AIGB40N65F5ATMA1 is available at Aetrix Electronics and suitable for main inverter traction stages, HV auxiliary inverters (e-compressor), and HV-LV DC-DC converters requiring stable component supply across automotive production programs.

Supply support for AIGB40N65F5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial chips, with global R&D and manufacturing facilities.

AIGB40N65F5ATMA1 belongs to Infineon's TRENCHSTOP™ 5 automotive IGBT discrete product line, engineered specifically for high-efficiency, high-reliability power conversion in xEV traction and auxiliary systems.

FAQ

What is the maximum junction temperature rating for AIGB40N65F5ATMA1?

The device is rated for continuous operation up to T_j = 175 °C, with transient peaks allowed per SOA curves in the official Infineon datasheet (document number AIGB40N65F5). This rating is validated under AEC-Q101 stress testing and supports compact thermal design in sealed inverter enclosures.

Does AIGB40N65F5ATMA1 require negative gate voltage for turn-off?

No. The device is designed for 0 V to +15 V gate drive only. Its gate oxide structure and threshold voltage (4.5–6.5 V) ensure reliable turn-off at 0 V gate potential without risk of Miller-induced false turn-on, eliminating need for negative bias circuitry in standard inverter gate drivers.

Can AIGB40N65F5ATMA1 be paralleled with identical units?

Yes. Its positive temperature coefficient of V_CE(sat) ensures natural current sharing across paralleled devices when mounted on a common heatsink with matched gate drive paths. Layout symmetry and individual gate resistors are still required to suppress oscillation and ensure dynamic balance.

Is there an Infineon-recommended gate driver IC for this IGBT?

Infineon recommends the 1ED020I12FA (AEC-Q100 qualified, 2 A peak output, integrated DESAT protection) or 2ED020I12-F (dual-channel, 2 A, reinforced isolation). Both provide optimal 15 V gate drive, fast propagation delay (<100 ns), and fault reporting compatible with AURIX™ MCU-based inverter controllers.

AIGB40N65F5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 40 A

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: -

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

AIGB40N65F5ATMA1 FAQ

1.How can I place an order for AIGB40N65F5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIGB40N65F5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIGB40N65F5ATMA1 reliable?

The price and inventory of AIGB40N65F5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIGB40N65F5ATMA1 is usually 5 days.

3.What payment methods are accepted for AIGB40N65F5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIGB40N65F5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIGB40N65F5ATMA1?

AIGB40N65F5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIGB40N65F5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIGB40N65F5ATMA1?

For technical support, including AIGB40N65F5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIGB40N65F5ATMA1 requirements.

6.How does Aetrix verify that AIGB40N65F5ATMA1 is sourced from the original manufacturer or authorized distributors?

All AIGB40N65F5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIGB40N65F5ATMA1 meets industry standards.

7.What is the process for return or replacement of AIGB40N65F5ATMA1?

All AIGB40N65F5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIGB40N65F5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIGB40N65F5ATMA1 part is unused and in its original packaging.

Return procedure for AIGB40N65F5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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