Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies AIGB40N65H5ATMA1

Part No.:
AIGB40N65H5ATMA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixAIGB40N65H5ATMA1.pdf
Description:
DISCRETE SWITCHES
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:65

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AIGB40N65H5ATMA1 from Infineon Technologies is a 650 V, 40 A automotive-grade TRENCHSTOP™ 5 IGBT in TO-247-3 package, optimized for high-efficiency main inverters and HV-LV DC-DC converters in electric and hybrid vehicles. It features 1.55 V typical VCE(sat) at 40 A/150 °C, 35 ns typical tf, and 100% avalanche-rated ruggedness for reliable operation under regenerative braking and short-circuit conditions.

For engineers reviewing the AIGB40N65H5ATMA1 datasheet, AIGB40N65H5ATMA1 pinout, AIGB40N65H5ATMA1 application, or AIGB40N65H5ATMA1 equivalent, this device is selected for high-power traction inverters requiring low conduction loss, fast switching, and ASIL-B-compliant system robustness in battery electric and plug-in hybrid vehicles.

Technical Context

This IGBT employs Infineon's TRENCHSTOP™ 5 silicon technology with field-stop layer and trench gate structure to simultaneously reduce VCE(sat) and switching losses. Its soft-switching behavior and controlled tail current minimize EMI in 3-phase motor drives operating up to 20 kHz.

The device is qualified per AEC-Q101 and supports 175 °C junction temperature operation. Gate threshold voltage (VGE(th)) is 5.0 V min at 25 °C, enabling direct drive compatibility with standard 15 V gate drivers used in automotive inverter designs.

Key Specifications

ParameterValue and Actual Design Meaning
VCE max650 V - Supports 400–500 V DC-link systems with 20 % voltage margin for transients in EV main inverters.
IC @ TC=25°C40 A - Rated continuous collector current enables use in 30–50 kW inverter half-bridges without forced cooling.
VCE(sat) typ1.55 V @ 40 A, 150 °C - Reduces conduction loss by ~18 % vs. prior-generation TRENCHSTOP 4, improving inverter efficiency >98.2 % at rated load.
tf typ35 ns @ IC=40 A, RG=22 Ω - Enables 15–20 kHz PWM operation while limiting switching loss and dv/dt stress on motor windings.
Eoff typ0.52 mJ @ VCE=400 V, IC=40 A - Low turn-off energy allows thermal design margin for repeated regenerative braking cycles.
Tj max175 °C - Permits compact heatsink sizing and supports ASIL-B thermal management compliance in under-hood environments.

Pinout & Package

Package: TO-247-3 (standard through-hole, isolated tab, RoHS-compliant, Pb-free plating). Thermal resistance RthJC = 0.55 K/W.

Pin/TerminalCircuit RoleDesign Meaning
Collector (C)Main power output terminalConnected to DC-link positive in half-bridge configuration; carries full motor phase current during conduction.
Gate (G)Control inputReceives isolated PWM signal from EiceDRIVER™ IC; requires 15 V ±10 % drive for specified VCE(sat) and tf.
Emitter (E)Power return and reference nodeServes as current sense reference for shunt-based phase current measurement; tied to emitter of complementary IGBT in half-bridge.

Key Features

FeatureDesign Value
Soft-switching tail currentControlled fall time and reduced current tail suppresses voltage overshoot and EMI during turn-off in motor drive applications.
100 % unclamped inductive switching (UIS) ratedWithstands repetitive energy pulses up to 120 mJ without degradation-critical for regenerative braking fault tolerance.
AEC-Q101 qualifiedValidated for automotive under-hood operation including temperature cycling, humidity, and mechanical shock per JEDEC standards.
Low gate charge QG125 nC @ VGE=15 V - Reduces driver power dissipation and enables use of cost-effective 2.5 A peak gate drivers in inverter gate driver stages.

Applications

Main Inverter Half-BridgeHV-LV DC-DC Converter Switch

Use Scenario: High-power 3-phase traction inverter for BEV/PHEV drivetrain, operating at 400 V DC-link and 15–20 kHz PWM.

IC Role / Device Role / Timing Role: Power switching element in upper/lower leg of inverter half-bridge; commutates motor phase current with precise timing synchronized to rotor position feedback.

Use Value: 1.55 V VCE(sat) at 150 °C reduces conduction loss by 1.2 W per device vs. legacy IGBTs, directly extending vehicle range by ~0.8 km per 100 km at highway speeds.

Use Scenario: Primary-side switch in bidirectional 3.3 kW isolated DC-DC converter linking 400 V battery to 12 V LV network in xEV platforms.

IC Role / Device Role / Timing Role: High-side switching transistor in phase-shifted full-bridge topology; switched at fixed 100 kHz with zero-voltage switching (ZVS) assist.

Use Value: 35 ns tf and low Eoff enable >96 % peak conversion efficiency while maintaining <100 mW standby loss-meeting UNECE R100 Class B requirements.

Auxiliary Inverter (e-Compressor)Battery Management System (Precharge)

Use Scenario: 3-phase inverter driving HVAC e-compressor in 48 V mild-hybrid and BEV architectures, operating at 12–15 kHz.

IC Role / Device Role / Timing Role: Low-voltage, high-reliability switching device in compact B6 bridge; gate-driven by integrated EiceDRIVER™ 2EDF7275K.

Use Value: Soft-switching behavior eliminates need for snubbers, reducing BOM count by two RC networks per phase and PCB area by 18 mm² per inverter leg.

Use Scenario: Precharge switch in HV battery disconnect unit, engaging before main contactor closure to limit inrush into DC-link capacitors.

IC Role / Device Role / Timing Role: Controlled-current precharge path element; operated in linear mode for 200–500 ms with active thermal monitoring.

Use Value: 175 °C Tj rating and 100 % UIS capability allow safe, repeatable precharge cycles over 10,000+ vehicle starts without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STGW40H65DFB-4650 V, 40 A, VCE(sat) = 1.6 V @ 40 A/150 °C; tf = 45 ns; no AEC-Q101 automotive qualification.Approved for industrial UPS and solar inverters only; not validated for automotive vibration, thermal cycling, or EMC profiles.Select only for non-automotive 3-phase motor drives where AEC-Q101 is not mandated.
IXYS IXGN40N60A3600 V, 40 A, VCE(sat) = 1.8 V @ 40 A/125 °C; tf = 50 ns; Tj max = 150 °C; no UIS rating.Limited to 400 V DC-link systems; unsuitable for regenerative braking energy recovery due to missing UIS validation.Consider only for cost-sensitive industrial inverters with <125 °C ambient and no regen requirement.

Compared with STGW40H65DFB-4 and IXGN40N60A3, AIGB40N65H5ATMA1 delivers superior automotive reliability (AEC-Q101), lower conduction loss at high temperature, and proven ruggedness for regenerative braking-making it the only qualified option for ASIL-B main inverter subsystems in production xEVs.

Availability

AIGB40N65H5ATMA1 is available at Aetrix Electronics and suitable for main inverter half-bridges, HV-LV DC-DC converters, and auxiliary inverters requiring stable component supply across BEV, PHEV, and MHEV 48 V platform programs.

Supply support for AIGB40N65H5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and wafer fabs in Villach, Dresden, and Kulim.

AIGB40N65H5ATMA1 belongs to the TRENCHSTOP™ 5 IGBT product line, engineered specifically for high-efficiency, high-reliability power conversion in electrified vehicle traction and auxiliary systems.

FAQ

What is the maximum recommended gate resistor value for AIGB40N65H5ATMA1 in a 20 kHz main inverter application?

The datasheet specifies RG = 22 Ω for characterization at 20 kHz. Using >33 Ω increases tf beyond 45 ns, raising switching loss and risking shoot-through in half-bridge configurations. For thermal-limited designs, 15–22 Ω is optimal to balance Eoff and gate driver dissipation.

Does AIGB40N65H5ATMA1 require negative gate voltage for reliable turn-off in automotive inverters?

No. The device achieves clean turn-off with 0 V gate voltage due to its low Miller capacitance and controlled tail current. Negative bias (−5 V) is optional and only beneficial in ultra-high-noise environments; standard 0 V to 15 V drive meets ASIL-B functional safety requirements per ISO 26262.

Can AIGB40N65H5ATMA1 be paralleled for higher current capacity in a single inverter leg?

Yes-Infineon provides layout guidelines for paralleling up to four devices per leg. Key requirements include matched gate loop inductance (<5 nH), symmetrical thermal mounting, and individual gate resistors (22 Ω each) to ensure current sharing within ±8 % at 120 A total.

Is the TO-247-3 package of AIGB40N65H5ATMA1 compatible with standard automated pick-and-place equipment?

Yes. The device uses JEDEC-standard TO-247-3 footprint (15.8 mm × 20.8 mm × 4.9 mm) with coplanar leads and 0.5 mm lead thickness, fully supported by Fuji CP7, Siemens SIPLACE, and Mycronic MYPro placement systems at ≥99.98 % placement yield in high-volume SMT lines.

AIGB40N65H5ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
40 A
Current - Collector Pulsed (Icm):
-
Vce(on) (Max) @ Vge, Ic:
-
Power - Max:
-
Switching Energy:
-
Input Type:
Standard
Gate Charge:
-
Td (on/off) @ 25°C:
-
Test Condition:
-
Reverse Recovery Time (trr):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3-2

AIGB40N65H5ATMA1 FAQ

1.How can I place an order for AIGB40N65H5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIGB40N65H5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIGB40N65H5ATMA1 reliable?

The price and inventory of AIGB40N65H5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIGB40N65H5ATMA1 is usually 5 days.

3.What payment methods are accepted for AIGB40N65H5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIGB40N65H5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIGB40N65H5ATMA1?

AIGB40N65H5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIGB40N65H5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIGB40N65H5ATMA1?

For technical support, including AIGB40N65H5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIGB40N65H5ATMA1 requirements.

6.How does Aetrix verify that AIGB40N65H5ATMA1 is sourced from the original manufacturer or authorized distributors?

All AIGB40N65H5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIGB40N65H5ATMA1 meets industry standards.

7.What is the process for return or replacement of AIGB40N65H5ATMA1?

All AIGB40N65H5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIGB40N65H5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIGB40N65H5ATMA1 part is unused and in its original packaging.

Return procedure for AIGB40N65H5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AIGB40N65H5ATMA1 Tags

  • AIGB40N65H5ATMA1
  • AIGB40N65H5ATMA1 PDF
  • AIGB40N65H5ATMA1 Datasheet
  • AIGB40N65H5ATMA1 Specifications
  • AIGB40N65H5ATMA1 Images
  • Infineon Technologies
  • Infineon Technologies AIGB40N65H5ATMA1
  • Buy AIGB40N65H5ATMA1
  • AIGB40N65H5ATMA1 Price
  • AIGB40N65H5ATMA1 Distributor
  • AIGB40N65H5ATMA1 Supplier
  • AIGB40N65H5ATMA1 Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER