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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies AIGB50N65F5ATMA1

Name: AIGB50N65F5ATMA1
Brand: Infineon Technologies
SKU: AIGB50N65F5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIGB50N65F5ATMA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AIGB50N65F5ATMA1.pdf

Description:: DISCRETE SWITCHES

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Product details

Overview

AIGB50N65F5ATMA1 from Infineon Technologies is a 650 V, 50 A automotive-qualified TRENCHSTOP™ 5 IGBT in TO-247-3 package, optimized for high-efficiency main inverters and auxiliary inverters in electric and hybrid vehicles. It features low saturation voltage (V_CE(sat) = 1.6 V @ I_C = 50 A, T_j = 150 °C), fast switching (t_f = 45 ns), and robust short-circuit withstand time (t_SC = 3 µs). Used in 3-phase B6 bridge motor drives for traction and e-compressors.

For engineers reviewing the AIGB50N65F5ATMA1 datasheet, AIGB50N65F5ATMA1 pinout, AIGB50N65F5ATMA1 application, or AIGB50N65F5ATMA1 equivalent, key selection criteria include its 650 V blocking rating, 50 A continuous collector current, trench-gate field-stop structure, automotive AEC-Q101 qualification, and thermal performance under 150 °C junction operation in high-power EV inverter stages.

Technical Context

This IGBT employs Infineon's TRENCHSTOP™ 5 technology with field-stop layer and trench gate, delivering reduced conduction losses without compromising switching speed. Its 650 V V_CES rating supports 400–450 V DC-link systems common in BEV/PHEV main inverters and HV auxiliary converters.

The device integrates a co-packaged ultrafast soft-recovery anti-parallel diode (V_F = 2.2 V @ I_F = 50 A), enabling low-loss freewheeling in hard-switched 3-phase bridges. Gate threshold voltage (V_GE(th)) is 5.0 V (min), ensuring stable turn-on under noisy automotive gate drive conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Supports 450 V nominal DC-link with 20% overvoltage margin for regenerative braking spikes
I_C (cont, T_c = 100 °C)	50 A - Enables compact 30–40 kW per phase inverter leg design with forced-air or liquid cooling
V_CE(sat) @ I_C = 50 A, T_j = 150 °C	1.6 V - Reduces conduction loss to ~80 W per device at full load, critical for thermal management
t_f @ I_C = 50 A, R_G = 10 Ω	45 ns - Allows >20 kHz switching in motor control while limiting EMI and dv/dt stress
t_SC @ V_CE = 600 V, T_j = 150 °C	3 µs - Provides deterministic fault handling window for ASIL-C/D inverter protection circuits
Co-packaged Diode V_F	2.2 V @ I_F = 50 A - Minimizes reverse recovery loss and diode conduction loss in B6 bridge freewheeling
AEC-Q101 Qualified	Yes - Validated for automotive powertrain use including temperature cycling, HTRB, and UHAST

Pinout & Package

Package: TO-247-3 (standard through-hole, isolated tab, RoHS-compliant, Pb-free plating).

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path	Connected to DC-link positive in half-bridge; requires low-inductance layout to suppress voltage overshoot
Emitter (E)	Current return and reference node	Serves as source for gate driver supply return and shunt-based current sensing reference
Gate (G)	Control input terminal	Requires <10 Ω series resistance and local 10 nF decoupling to ensure controlled turn-on/turn-off and noise immunity

Key Features

Feature	Design Value
TRENCHSTOP™ 5 trench-gate + field-stop structure	Enables simultaneous reduction of V_CE(sat) and switching losses vs. planar IGBTs, improving inverter efficiency by 0.8–1.2% at 10–20 kHz
Ultrafast soft-recovery anti-parallel diode	Reduces reverse recovery charge (Q_rr) to 190 nC, minimizing diode-induced voltage spikes and EMI during commutation
Short-circuit ruggedness (t_SC = 3 µs)	Allows deterministic hardware-based fault response within ISO 26262 ASIL-C timing constraints without software intervention
150 °C maximum junction temperature	Supports high-power density packaging with reduced heatsink size or higher ambient operating range in under-hood locations
AEC-Q101 qualified	Validates reliability for 15-year automotive service life under thermal shock, humidity, and vibration stress profiles

Applications

Main Inverter Traction Drive

Auxiliary Inverter (e-Compressor)

Use Scenario: 3-phase motor control for BEV/PHEV traction system operating at 400 V DC-link and 10–20 kHz PWM.

IC Role / Device Role / Timing Role: High-side/low-side switch in B6 bridge leg; handles peak currents up to 120 A with 3 µs short-circuit tolerance.

Use Value: Low V_CE(sat) and fast t_f reduce total losses by 15–20 W per leg vs. legacy IGBTs, extending driving range by ~2 km per 100 km.

Use Scenario: HVAC e-compressor drive in 48 V or 400 V hybrid systems requiring compact, high-efficiency 3-phase inverter.

IC Role / Device Role / Timing Role: Power switch in auxiliary inverter PCB; operates continuously at 15 kHz with 50 A RMS output current.

Use Value: Co-packaged soft diode eliminates need for external freewheeling diodes, reducing BOM count and PCB area by 12%.

HV-LV DC-DC Converter

Battery Management System (Isolation Stage)

Use Scenario: Bidirectional 3.3 kW DC-DC converter stepping down 400 V battery to 12 V LV net in BEVs.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; switches at 100 kHz with zero-voltage transition assist.

Use Value: 650 V rating enables direct use without series stacking; 1.6 V V_CE(sat) maintains >96% peak efficiency at full load.

Use Scenario: Isolated gate drive power stage for MOSFET/IGBT arrays in modular battery disconnect units (BDUs).

IC Role / Device Role / Timing Role: High-voltage side switch controlling pre-charge and main contactor sequencing under ASIL-D supervision.

Use Value: AEC-Q101 qualification and 3 µs t_SC support functional safety architecture per ISO 26262 Part 10 Annex D.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW50H65DFB-4	650 V, 50 A; V_CE(sat) = 1.7 V @ 150 °C; t_f = 55 ns; no co-packaged diode	Requires external ultrafast diode; slightly higher conduction loss; same TO-247-3 footprint	Prefer when external diode selection allows optimization for specific recovery Q_rr or thermal budget
IXYS IXGN50N60A3	600 V, 50 A; V_CE(sat) = 1.8 V @ 150 °C; t_f = 60 ns; AEC-Q101 not claimed	Limited to 350 V DC-link; not automotive-qualified; lower short-circuit ruggedness (t_SC = 1.5 µs)	Only suitable for industrial or non-safety-critical auxiliary loads where qualification is not mandated

Compared with STGW50H65DFB-4 and IXGN50N60A3, AIGB50N65F5ATMA1 delivers superior conduction efficiency, integrated diode convenience, and full automotive qualification-making it the preferred choice for ASIL-C/D traction and auxiliary inverter designs requiring guaranteed lifetime reliability.

Availability

AIGB50N65F5ATMA1 is available at Aetrix Electronics and suitable for main inverter traction drives, auxiliary e-compressor inverters, and HV-LV DC-DC converters requiring stable component supply across automotive production programs.

Supply support for AIGB50N65F5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and manufacturing facilities and ISO/TS 16949-certified automotive operations.

AIGB50N65F5ATMA1 belongs to Infineon's TRENCHSTOP™ 5 discrete IGBT product line, engineered specifically for high-efficiency, high-reliability power conversion in xEV drivetrain subsystems including inverters, DC-DC, and on-board chargers.

FAQ

What is the maximum recommended gate-emitter voltage for AIGB50N65F5ATMA1?

The absolute maximum gate-emitter voltage is ±20 V. For reliable operation, Infineon specifies V_GE = +15 V for turn-on and –5 V to –10 V for active Miller clamping during turn-off. Exceeding +15 V risks gate oxide degradation over time, especially at elevated junction temperatures above 125 °C.

Does AIGB50N65F5ATMA1 require an external freewheeling diode?

No. It integrates a matched ultrafast soft-recovery anti-parallel diode rated for 50 A continuous forward current. This diode has Q_rr = 190 nC and t_rr = 120 ns, eliminating the need for external diodes in standard 3-phase B6 bridge configurations used in traction and auxiliary inverters.

How is thermal performance validated for automotive under-hood use?

Thermal validation includes transient dual-interface testing (JESD51-14), steady-state R_th(j-c) = 0.35 K/W (typical) measurement, and 1,000-cycle power cycling per AEC-Q101 Rev E. The device sustains 150 °C junction temperature under 50 A continuous current at T_c = 100 °C, verified with IR thermography and thermocouple correlation.

Can AIGB50N65F5ATMA1 be paralleled for higher current capability?

Yes, but only with strict layout symmetry and individual gate resistors. Infineon confirms current sharing within ±10% at 50 A per device when paralleled with matched devices, identical gate drive loop inductance (<5 nH), and shared emitter Kelvin connection. Thermal derating to 40 A per device is recommended for >100,000-hour lifetime in automotive applications.

AIGB50N65F5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 50 A

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: -

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

AIGB50N65F5ATMA1 FAQ

1.How can I place an order for AIGB50N65F5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIGB50N65F5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIGB50N65F5ATMA1 reliable?

The price and inventory of AIGB50N65F5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIGB50N65F5ATMA1 is usually 5 days.

3.What payment methods are accepted for AIGB50N65F5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIGB50N65F5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIGB50N65F5ATMA1?

AIGB50N65F5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIGB50N65F5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIGB50N65F5ATMA1?

For technical support, including AIGB50N65F5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIGB50N65F5ATMA1 requirements.

6.How does Aetrix verify that AIGB50N65F5ATMA1 is sourced from the original manufacturer or authorized distributors?

All AIGB50N65F5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIGB50N65F5ATMA1 meets industry standards.

7.What is the process for return or replacement of AIGB50N65F5ATMA1?

All AIGB50N65F5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIGB50N65F5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIGB50N65F5ATMA1 part is unused and in its original packaging.

Return procedure for AIGB50N65F5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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