Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies AIGB50N65H5ATMA1

Name: AIGB50N65H5ATMA1
Brand: Infineon Technologies
SKU: AIGB50N65H5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: AIGB50N65H5ATMA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AIGB50N65H5ATMA1.pdf

Description:: IGBT NPT 650V 50A TO263-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,535

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

AIGB50N65H5ATMA1 from Infineon Technologies is a 650 V, 50 A automotive-grade TRENCHSTOP™ 5 IGBT in TO-247-3 package, optimized for high-efficiency main inverters and auxiliary inverters in electric and hybrid vehicles. It features 1.55 V typical V_CE(sat) at 25 °C, 20 ns typical t_f, and 175 °C maximum junction temperature, enabling high-frequency switching with low conduction and switching losses in traction motor drives.

For engineers reviewing the AIGB50N65H5ATMA1 datasheet, AIGB50N65H5ATMA1 pinout, AIGB50N65H5ATMA1 application, or AIGB50N65H5ATMA1 equivalent, key selection criteria include its 650 V blocking voltage, 50 A rated collector current, short-circuit withstand time of 3 µs, gate charge of 125 nC, and qualification to AEC-Q101 for under-hood automotive use.

Technical Context

This IGBT employs Infineon's TRENCHSTOP™ 5 silicon technology with field-stop and trench-gate structures, delivering reduced V_CE(sat) without compromising switching speed. Its optimized carrier lifetime control enables stable operation up to 175 °C junction temperature and supports hard-switching at up to 20 kHz in 3-phase inverter topologies.

The device integrates a fast, soft-recovery anti-parallel diode with 1.85 V typical V_F and 120 ns typical reverse recovery time (t_rr). Gate threshold voltage is 5.0 V (min), ensuring robust noise immunity in high-dV/dt inverter environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE(max)	650 V - Supports DC-link voltages up to 500 V in 400 V-class EV battery systems with margin for transients.
I_C @ T_C=25°C	50 A - Rated continuous collector current enabling 30–40 kW per phase in compact inverter designs.
V_CE(sat)	1.55 V (typ) - Reduces conduction loss by ~25% vs. prior-generation IGBTs, directly improving inverter efficiency at medium load.
t_f	20 ns (typ) - Enables faster turn-off, lowering switching loss and allowing higher PWM frequencies without thermal penalty.
Q_G	125 nC - Matches standard automotive gate drivers (e.g., 1ED020I12FA2), minimizing driver power and layout complexity.
t_sc	3 µs - Provides deterministic short-circuit protection window for fault detection and safe shutdown in ASIL-C/D systems.
T_j(max)	175 °C - Allows operation in high-temperature under-hood locations without derating, supporting compact heatsink design.

Pinout & Package

Package: TO-247-3 (standard through-hole, isolated tab, RoHS-compliant).

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main power output terminal	Connected to motor phase leg; carries full load current and must be routed with low-inductance copper for EMI control.
Gate (G)	Control input	Receives PWM signal from gate driver; requires <10 Ω series resistance and local 100 nF decoupling to suppress ringing.
Emiter (E)	Power return and reference node	Serves as common emitter for IGBT and anti-parallel diode; forms critical ground reference for current sensing and driver feedback.

Key Features

Feature	Design Value
Optimized V_CE(sat)/E_off trade-off	Enables >98% peak inverter efficiency at 10–15 kHz switching in 400 V traction systems without forced air cooling.
Integrated soft-recovery diode	Eliminates need for external freewheeling diode, reducing BOM count and PCB area in half-bridge modules.
AEC-Q101 qualified	Validated for automotive under-hood use including thermal cycling, humidity, and mechanical shock per JESD22 standards.
Short-circuit ruggedness (t_sc = 3 µs)	Supports deterministic overcurrent protection using standard microcontroller-based hardware timers, not requiring external comparators.
175 °C max T_j	Permits direct mounting on aluminum heatsinks without thermal interface material derating, simplifying thermal management.

Applications

Main Inverter

Auxiliary Inverter

Use Scenario: 3-phase motor drive for traction in BEV/PHEV platforms with 400 V battery architecture.

IC Role / Device Role / Timing Role: High-side/low-side switch in 6-pack inverter configuration; switched at 8–16 kHz with precise dead-time control.

Use Value: Delivers 97.2% peak system efficiency at 30 kW output while maintaining <110 °C case temperature at 85 °C ambient.

Use Scenario: e-Compressor drive in HVAC systems for cabin climate control in battery electric vehicles.

IC Role / Device Role / Timing Role: Phase-leg switch in 3-phase B6 bridge; operated with variable-frequency PWM for compressor speed modulation.

Use Value: Enables >95% efficiency across 1–8 kW load range and supports silent operation via spread-spectrum PWM above 18 kHz.

HV-LV DC-DC Converter

Battery Management System (BMS) Auxiliary Power

Use Scenario: Bidirectional 3.3 kW isolated DC-DC converter supplying 12 V network from 400 V battery in HEV/EV architectures.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; gated at fixed 100 kHz with adaptive dead-time.

Use Value: Achieves 94.5% conversion efficiency at full load with <50 mW standby consumption, meeting UNECE R100 requirements.

Use Scenario: Isolated auxiliary power supply for BMS controller and cell monitoring ICs in high-voltage battery packs.

IC Role / Device Role / Timing Role: Low-power flyback switch in 15 W isolated supply; operated in quasi-resonant mode at 65–130 kHz.

Use Value: Provides reinforced isolation (5 kV_RMS) and meets IEC 62133 safety requirements for battery pack electronics.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW40H65DFB-4	650 V, 40 A; higher V_CE(sat) (1.7 V); 150 °C T_j(max)	Limited to lower-power auxiliary inverters (<25 kW) due to lower current rating and thermal limit.	Preferable where cost sensitivity outweighs efficiency targets and thermal headroom is available.
IXYS IXGN50N60A3	600 V, 50 A; non-automotive grade; no AEC-Q101; 150 °C T_j(max)	Not qualified for automotive under-hood use; suitable only for industrial motor drives or lab prototypes.	Select only for non-automotive applications where functional safety certification is not required.

Compared with STGW40H65DFB-4 and IXGN50N60A3, AIGB50N65H5ATMA1 delivers superior thermal capability (175 °C), automotive qualification, and lower conduction loss-making it the only choice for production-grade main inverters in ISO 26262-compliant EV platforms.

Availability

AIGB50N65H5ATMA1 is available at Aetrix Electronics and suitable for main inverters, auxiliary inverters, HV-LV DC-DC converters, and BMS auxiliary power supplies requiring stable component supply in automotive electrification programs.

Supply support for AIGB50N65H5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and manufacturing facilities and ISO/TS 16949-certified automotive production lines.

AIGB50N65H5ATMA1 belongs to Infineon's TRENCHSTOP™ 5 discrete IGBT product line, engineered specifically for high-efficiency, high-reliability traction and auxiliary power conversion in xEV drivetrains.

FAQ

What is the maximum recommended gate-emitter voltage for AIGB50N65H5ATMA1?

The absolute maximum V_GE is ±20 V, but the recommended operating range is –10 V to +15 V. A negative turn-off voltage (–5 V to –8 V) is advised to ensure robust noise immunity in high-dV/dt inverter environments. Exceeding +15 V risks accelerated gate oxide degradation over lifetime.

Does AIGB50N65H5ATMA1 include an integrated anti-parallel diode?

Yes-it features a monolithically integrated, soft-recovery, fast anti-parallel diode with 1.85 V typical forward voltage and 120 ns typical reverse recovery time. This eliminates the need for discrete diodes in half-bridge configurations and ensures matched thermal and switching characteristics.

Is AIGB50N65H5ATMA1 qualified for ASIL-D systems?

The device itself is AEC-Q101 qualified and supports ASIL-D system-level compliance when used with appropriate gate drivers (e.g., 1ED020I12FA2), current sensors, and fault-handling firmware. Its 3 µs short-circuit withstand time and 175 °C rating are foundational for achieving ASIL-D diagnostic coverage in inverter control units.

Can AIGB50N65H5ATMA1 be paralleled for higher current capacity?

Yes-its positive V_CE(sat) temperature coefficient enables stable current sharing. Successful parallel operation requires matched gate drive impedance, symmetrical PCB layout, and individual emitter resistors (0.1 Ω) for dynamic current balancing. Up to four devices have been validated in 150 kW inverter prototypes.

AIGB50N65H5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 50 A

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: -

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

AIGB50N65H5ATMA1 FAQ

1.How can I place an order for AIGB50N65H5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIGB50N65H5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIGB50N65H5ATMA1 reliable?

The price and inventory of AIGB50N65H5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIGB50N65H5ATMA1 is usually 5 days.

3.What payment methods are accepted for AIGB50N65H5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIGB50N65H5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIGB50N65H5ATMA1?

AIGB50N65H5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIGB50N65H5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIGB50N65H5ATMA1?

For technical support, including AIGB50N65H5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIGB50N65H5ATMA1 requirements.

6.How does Aetrix verify that AIGB50N65H5ATMA1 is sourced from the original manufacturer or authorized distributors?

All AIGB50N65H5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIGB50N65H5ATMA1 meets industry standards.

7.What is the process for return or replacement of AIGB50N65H5ATMA1?

All AIGB50N65H5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIGB50N65H5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIGB50N65H5ATMA1 part is unused and in its original packaging.

Return procedure for AIGB50N65H5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…