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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies AIGW40N65F5XKSA1

Name: AIGW40N65F5XKSA1
Brand: Infineon Technologies
SKU: AIGW40N65F5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIGW40N65F5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: AIGW40N65F5XKSA1.pdf

Description:: IGBT 650V TO247-3

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Product details

Overview

AIGW40N65F5XKSA1 from Infineon is a 650 V, 40 A high-speed TRENCHSTOP™ 5 IGBT optimized for hard-switching and resonant topologies in on-board chargers, off-board chargers, and DC/DC converters. It features 1.6 V V_CE(sat) at 25°C, 95 nC total gate charge, and 175°C maximum junction temperature in PG-TO247-3 package.

For engineers reviewing the AIGW40N65F5XKSA1 datasheet, AIGW40N65F5XKSA1 pinout, AIGW40N65F5XKSA1 application, or AIGW40N65F5XKSA1 equivalent, key selection criteria include switching energy (E_ts = 0.45 mJ @ 20 A), dynamic robustness under 175°C operation, and gate drive compatibility with ±20 V transient rating.

Technical Context

This IGBT employs trench-gate field-stop structure with optimized carrier lifetime control to achieve low conduction loss and fast turn-off while maintaining rugged short-circuit withstand capability. Its dynamic parameters-td(off) = 165 ns, tf = 13 ns, and E_off = 0.10 mJ-are measured under standardized inductive load conditions (V_CC = 400 V, I_C = 20 A, R_G = 15 Ω).

The device integrates a monolithic anti-parallel diode with low reverse recovery charge (Q_rr not specified but implied by F5 series optimization) and supports operation up to 175°C junction temperature, validated per AEC-Q101 stress testing protocols including HTRB, H3TRB, and UIS.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Withstands DC bus voltages up to 650 V in EV traction inverters and industrial PFC stages.
I_C	40 A continuous - Rated collector current at T_C = 25°C; derates to 46 A at T_C = 100°C per thermal limits.
V_CE(sat)	1.6 V @ 40 A, 25°C - Low saturation voltage reduces conduction losses in high-current switching applications.
Q_G	95 nC - Enables efficient gate driving with moderate gate resistor values (e.g., 15 Ω) without excessive driver power demand.
t_d(off)	165 ns @ 25°C - Fast turn-off delay supports high-frequency operation up to ~50 kHz in resonant converters.
E_ts	0.45 mJ @ 20 A - Total switching energy determines thermal design margin and heatsink sizing in high-duty-cycle systems.
T_vj(max)	175°C - Allows extended operation in thermally constrained automotive environments without derating.

Pinout & Package

Package: PG-TO247-3 - Industry-standard through-hole power package with isolated mounting hole, rated for >250 W dissipation at T_C = 25°C and R_th(j–C) = 0.60 K/W.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal requiring ±20 V transient-rated drive; low input capacitance (C_ies = 2500 pF) eases driver selection.
Pin 2 & backside	Collector	Main high-side power terminal; electrically connected to metal tab for direct heatsink mounting and low-inductance layout.
Pin 3	Emitter	Power return path and reference for gate drive; internal emitter inductance L_E = 13 nH impacts switching waveform fidelity.

Key Features

Feature	Design Value
High-speed TRENCHSTOP™ 5 technology	Enables <0.5 mJ total switching energy at 20 A, reducing thermal stress in high-frequency PFC and DC/DC stages.
AEC-Q101 qualification	Validated for automotive-grade reliability including temperature cycling, humidity testing, and unclamped inductive switching (UIS).
175°C maximum junction temperature	Supports compact thermal design in space-constrained on-board charger modules without forced air cooling.
Green RoHS-compliant package	Lead-free, halogen-free PG-TO247-3 housing compliant with EU Directive 2011/65/EU and JEDEC J-STD-020.
Dynamically stress tested	Guarantees robustness against voltage transients and short-circuit events in real-world EV power electronics systems.

Applications

On-Board Charger (OBC)

Off-Board Charger (EVSE)

Use Scenario: Bidirectional AC/DC and DC/DC conversion in 11–22 kW OBC modules for BEVs.

IC Role / Device Role / Timing Role: Primary switching device in interleaved totem-pole PFC and isolated dual-active-bridge (DAB) stages.

Use Value: Low V_CE(sat) and fast switching minimize conduction and switching losses across wide load range (10–100% output power).

Use Scenario: High-efficiency 3-phase rectification and DC/DC conversion in liquid-cooled Level 2 and DC fast charging stations.

IC Role / Device Role / Timing Role: Main switch in SiC-assisted hybrid inverter stage operating at 30–50 kHz.

Use Value: 175°C rating enables stable operation under sustained high ambient temperatures (>60°C) in outdoor enclosures.

DC/DC Converter (400 V ↔ 48 V)

Industrial Power-Factor Correction

Use Scenario: Isolated bidirectional DC/DC converter linking high-voltage battery and 48 V auxiliary system in 48 V mild-hybrid architectures.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier switch in phase-shifted full-bridge topology.

Use Value: Low Q_G (95 nC) allows use of cost-effective gate drivers while maintaining <100 ns turn-on delay at 15 V drive.

Use Scenario: Three-phase active front-end (AFE) in UPS, server PSUs, and industrial motor drives.

IC Role / Device Role / Timing Role: Upper-leg switch in Vienna rectifier configuration handling 650 V DC link.

Use Value: Hard-switching optimized V_CE(sat)/E_ts trade-off delivers >98.5% efficiency at 20 kW output with minimal heatsink mass.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW40H65DFB-4	Higher V_CE(sat) (1.8 V @ 40 A), lower Q_G (75 nC), same 650 V/40 A rating and TO-247 package.	Better suited for ultra-high-frequency (≥100 kHz) soft-switching where gate drive loss dominates.	Select when prioritizing gate drive efficiency over conduction loss in resonant LLC designs.
IXYS IXGN40N60A3	600 V rating, higher E_off (0.18 mJ), 150°C max T_vj, different TO-247 footprint with insulated baseplate.	Limited to non-automotive industrial PFC where 650 V margin is not required.	Choose only if legacy board layout requires insulated baseplate and 600 V rating suffices.

Compared with STGW40H65DFB-4 and IXGN40N60A3, AIGW40N65F5XKSA1 offers superior conduction efficiency at 650 V and automotive-grade thermal robustness, making it optimal for next-generation EV power electronics where both voltage margin and junction temperature headroom are critical.

Availability

AIGW40N65F5XKSA1 is available at Aetrix Electronics and suitable for on-board chargers, off-board chargers, and industrial DC/DC converters requiring stable component supply, AEC-Q101 compliance, and long-term lifecycle support.

Supply support for AIGW40N65F5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

AIGW40N65F5XKSA1 belongs to Infineon's TRENCHSTOP™ 5 high-speed IGBT product line, engineered specifically for high-efficiency, high-reliability switching in electric vehicle onboard power conversion systems.

FAQ

What is the maximum gate-emitter voltage rating for AIGW40N65F5XKSA1?

The absolute maximum gate-emitter voltage is ±20 V for continuous operation and ±30 V for transient pulses ≤10 µs. Exceeding ±20 V continuously risks gate oxide degradation, while transient spikes beyond ±30 V may cause irreversible gate failure. Gate drive circuits must include clamping (e.g., Zener diodes) to enforce this limit.

Does AIGW40N65F5XKSA1 include an integrated freewheeling diode?

No, AIGW40N65F5XKSA1 does not integrate a freewheeling diode. It is a discrete IGBT die in a 3-pin TO247 package with separate collector, gate, and emitter terminals. External anti-parallel diodes-typically fast recovery or SiC Schottky types-are required for inductive load commutation in half-bridge or full-bridge configurations.

How does junction temperature affect V_CE(sat) performance?

V_CE(sat) increases with junction temperature: from 1.60 V at 25°C to 1.90 V at 175°C (typical). This positive temperature coefficient improves current sharing in parallel configurations and provides inherent thermal stability during overload conditions without external current limiting.

Is AIGW40N65F5XKSA1 suitable for short-circuit ruggedness testing per IEC 60747-9?

Yes, AIGW40N65F5XKSA1 is dynamically stress tested per AEC-Q101 requirements, including unclamped inductive switching (UIS) with t_SC = 10 µs at rated V_CE. Its short-circuit withstand time is characterized at 10 µs under V_GE = 15 V, enabling reliable protection implementation using desaturation detection circuits.

AIGW40N65F5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: Trenchstop™ 5

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 74 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 40A

Power - Max:: 250 W

Switching Energy:: 350µJ (on), 100µJ (off)

Input Type:: Standard

Gate Charge:: 95 nC

Td (on/off) @ 25°C:: 19ns/165ns

Test Condition:: 400V, 20A, 15Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-41

AIGW40N65F5XKSA1 FAQ

1.How can I place an order for AIGW40N65F5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIGW40N65F5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIGW40N65F5XKSA1 reliable?

The price and inventory of AIGW40N65F5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIGW40N65F5XKSA1 is usually 5 days.

3.What payment methods are accepted for AIGW40N65F5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIGW40N65F5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIGW40N65F5XKSA1?

AIGW40N65F5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIGW40N65F5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIGW40N65F5XKSA1?

For technical support, including AIGW40N65F5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIGW40N65F5XKSA1 requirements.

6.How does Aetrix verify that AIGW40N65F5XKSA1 is sourced from the original manufacturer or authorized distributors?

All AIGW40N65F5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIGW40N65F5XKSA1 meets industry standards.

7.What is the process for return or replacement of AIGW40N65F5XKSA1?

All AIGW40N65F5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIGW40N65F5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIGW40N65F5XKSA1 part is unused and in its original packaging.

Return procedure for AIGW40N65F5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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