Infineon Technologies AIGW40N65H5XKSA1

Overview

AIGW40N65H5XKSA1 from Infineon is a 650 V, 40 A high-speed TRENCHSTOP™ 5 IGBT optimized for hard-switching and resonant topologies in on-board/off-board EV chargers and DC/DC converters, featuring 1.66 V V_CE(sat) at 25°C, 92 nC gate charge, and 175°C maximum junction temperature.

For engineers reviewing the AIGW40N65H5XKSA1 datasheet, AIGW40N65H5XKSA1 pinout, AIGW40N65H5XKSA1 application, or AIGW40N65H5XKSA1 equivalent, key selection criteria include switching energy (E_ts = 0.47 mJ @ 20 A), thermal resistance (R_th(j–C) = 0.60 K/W), dynamic ruggedness, AEC-Q101 qualification, and PG-TO247-3 package compatibility with high-power gate drive layouts.

Technical Context

This IGBT employs Infineon's fifth-generation TRENCHSTOP™ 5 trench-gate field-stop structure, delivering reduced tail current and lower switching losses versus prior generations. Its low Q_G (92 nC) and fast turn-off delay (t_d(off) = 149 ns @ 25°C) enable high-frequency operation up to 100 kHz in PFC and isolated DC/DC stages.

The device integrates a co-packaged ultrafast soft-recovery anti-parallel diode (not separately specified but inherent in H5 series construction), supports ±20 V gate drive, and maintains stable V_GE(th) (3.2–4.8 V) across –40°C to +175°C, enabling robust gate control under thermal stress.

Key Specifications

Pinout & Package

Supplied in PG-TO247-3 package: insulated plastic case with solderable copper tab (collector), three through-hole leads, and standardized mechanical footprint compatible with industry-standard TO-247 heatsink clamps.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with IKW40N65ES5XKSA1 and FGH40N60UF, AIGW40N65H5XKSA1 delivers superior efficiency in high-frequency EV charging due to its lower Q_G, tighter V_CE(sat) distribution, and full AEC-Q101 qualification-enabling smaller magnetics, reduced heatsink mass, and extended lifetime in thermally constrained enclosures.

Availability

AIGW40N65H5XKSA1 is available at Aetrix Electronics and suitable for on-board EV chargers, off-board EV chargers, and industrial DC/DC converters requiring stable component supply, long-term automotive-grade availability, and traceable lot-level compliance documentation.

Supply support for AIGW40N65H5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and energy markets.

The TRENCHSTOP™ 5 IGBT product line targets high-efficiency, high-reliability power conversion in electric mobility and renewable energy systems, emphasizing low-loss switching, ruggedness, and AEC-Q101 compliance.

FAQ

What is the maximum gate-emitter voltage rating for AIGW40N65H5XKSA1?

The absolute maximum gate-emitter voltage is ±20 V for continuous operation and ±30 V for transient pulses ≤10 µs with duty cycle <1%. Exceeding ±20 V continuously risks oxide degradation and threshold shift; gate drivers must include clamping or active regulation to stay within this limit under all operating conditions including Miller-induced spikes.

Does AIGW40N65H5XKSA1 include an integrated anti-parallel diode?

No-the AIGW40N65H5XKSA1 is a discrete IGBT die in a 3-pin TO-247 package without an integrated freewheeling diode. System designers must use an external ultrafast soft-recovery diode (e.g., IDH08SG60C) with matched voltage rating and recovery characteristics to handle inductive load commutation in half-bridge or full-bridge topologies.

How does the 175°C maximum junction temperature impact thermal design?

The 175°C T_vj(max) allows operation at higher case temperatures than 150°C-rated IGBTs, reducing required heatsink surface area by ~25% for the same power dissipation. When combined with R_th(j–C) = 0.60 K/W, it enables reliable 40 A conduction at T_C = 100°C-critical for sealed, fanless EV charger enclosures where ambient can exceed 85°C.

Is AIGW40N65H5XKSA1 pin-compatible with previous-generation Infineon IGBTs?

Yes-it uses the standard PG-TO247-3 footprint and identical pin assignment (G-C-E) as AIGW40N65H3 and AIGW40N65H4, enabling drop-in replacement in existing PCB layouts. However, gate drive timing and snubber values may require adjustment due to lower Q_G and faster switching, especially in high-dV/dt environments.